KR100666411B1 - 다공질 실리카 형성용 도포액 - Google Patents
다공질 실리카 형성용 도포액 Download PDFInfo
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- KR100666411B1 KR100666411B1 KR1020057018574A KR20057018574A KR100666411B1 KR 100666411 B1 KR100666411 B1 KR 100666411B1 KR 1020057018574 A KR1020057018574 A KR 1020057018574A KR 20057018574 A KR20057018574 A KR 20057018574A KR 100666411 B1 KR100666411 B1 KR 100666411B1
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- South Korea
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- coating liquid
- porous silica
- film
- surfactant
- alkoxysilane compound
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/14—Colloidal silica, e.g. dispersions, gels, sols
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
Abstract
Description
Claims (5)
- (A) 알콕시실란 화합물과,(B) 계면활성제와,(C) 유기 양성 전해질을 함유하고,금속 함유량이 50ppb 이하인 다공질 실리카 형성용 도포액.
- 제1항에 있어서,(C) 유기 양성 전해질이 (C1) 아미노산 및/또는 펩티드인 것을 특징으로 하는 다공질 실리카 형성용 도포액.
- 제1항에 있어서,(C) 유기 양성 전해질이 상기 다공질 실리카 형성용 도포액 중에 0.1∼6000ppm 함유되어 있는 것을 특징으로 하는 다공질 실리카 형성용 도포액.
- 제1항에 있어서,(A) 알콕시실란 화합물이 (A1) 알콕시실란 화합물의 부분적인 가수분해 축합물인 것을 특징으로 하는 다공질 실리카 형성용 도포액.
- 제1항에 있어서,하기 식으로 규정되는 WCR값이 O.5∼3.0의 범위에 있는 것을 특징으로 하는 다공질 실리카 형성용 도포액.WCR = WC/(60.09×MSi) (식 1)(단, WC는 (B)계면활성제의 질량(단위: 그램),MSi는 (A)알콕시실란 화합물의 규소환산으로의 몰량을 나타냄).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003120339 | 2003-04-24 | ||
JPJP-P-2003-00120339 | 2003-04-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060002901A KR20060002901A (ko) | 2006-01-09 |
KR100666411B1 true KR100666411B1 (ko) | 2007-01-10 |
Family
ID=33308131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020057018574A KR100666411B1 (ko) | 2003-04-24 | 2004-04-26 | 다공질 실리카 형성용 도포액 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7291215B2 (ko) |
JP (1) | JP4348335B2 (ko) |
KR (1) | KR100666411B1 (ko) |
CN (1) | CN100339302C (ko) |
TW (1) | TWI287530B (ko) |
WO (1) | WO2004094311A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050196974A1 (en) * | 2004-03-02 | 2005-09-08 | Weigel Scott J. | Compositions for preparing low dielectric materials containing solvents |
JP4643314B2 (ja) * | 2005-03-10 | 2011-03-02 | 独立行政法人科学技術振興機構 | 規則的に配列したナノ粒子状シリカ、及びその製造方法 |
JP4894153B2 (ja) * | 2005-03-23 | 2012-03-14 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
JP5219335B2 (ja) * | 2005-12-20 | 2013-06-26 | 株式会社トクヤマ | 被覆組成物用原液 |
JP5030478B2 (ja) * | 2006-06-02 | 2012-09-19 | 株式会社アルバック | 多孔質膜の前駆体組成物及びその調製方法、多孔質膜及びその作製方法、並びに半導体装置 |
KR100865966B1 (ko) | 2008-04-29 | 2008-10-30 | (주) 더몰론코리아 | 2-아미노-엔-도데실아세트아마이를 이용한 메조 세공의실리카 나선형 구조체를 합성하는 방법 |
US8435480B2 (en) * | 2008-04-25 | 2013-05-07 | Thermolon Korea Co., Ltd. | Method for synthesizing one-dimensional helical nanoporous structures and method for synthesizing glycine-derived surfactant for synthesizing helical nanoporous structures |
KR101057476B1 (ko) | 2008-07-07 | 2011-08-17 | (주) 더몰론코리아 | 1차원구조의 발수성 나노실리카 및 이의 합성방법 |
WO2012099719A1 (en) | 2011-01-18 | 2012-07-26 | Dow Corning Corporation | Method for treating substrates with halosilanes |
BR112014029193A2 (pt) * | 2012-05-22 | 2017-06-27 | Dsm Ip Assets Bv | composição e processo para a produção de um revestimento de óxido inorgânico poroso |
EP2915185A4 (en) * | 2012-10-31 | 2016-07-06 | Sba Materials Inc | COMPOSITIONS OF LOW K-VALUE DIELECTRIC SOLVENTS AND NON-METALLIC CATALYSTS |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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CA2072352C (en) | 1990-01-25 | 1999-06-01 | Jeffrey Scott Beck | Synthetic porous crystalline material, its synthesis and use |
US6294608B1 (en) * | 1995-05-11 | 2001-09-25 | Wacker-Chemie Gmbh | Emulsions of organosilicon compounds for imparting water repellency to building materials |
JP2000159509A (ja) * | 1998-11-27 | 2000-06-13 | Kansai Shingijutsu Kenkyusho:Kk | 無機粒子の製造方法および無機粒子 |
DE60021476T2 (de) * | 1999-06-04 | 2006-05-24 | Jsr Corp. | Beschichtungszusammensetzung für die Filmherstellung und Material für isolierenden Schichten |
KR100391062B1 (ko) * | 2000-03-17 | 2003-09-17 | 가부시기가이샤 이낙스 | 친수성의 미세다공 오염방지층을 가진 구조체 및 그 구조체를 제조하는 방법 |
US6576568B2 (en) | 2000-04-04 | 2003-06-10 | Applied Materials, Inc. | Ionic additives for extreme low dielectric constant chemical formulations |
JP2001294417A (ja) | 2000-04-12 | 2001-10-23 | Nippon Chem Ind Co Ltd | コロイダルシリカの製造方法 |
US6797391B2 (en) * | 2000-08-24 | 2004-09-28 | Basf Nof Coatings Co., Ltd. | Stain resistant coating compositions, methods of coating and coated articles |
WO2002068558A1 (fr) * | 2001-02-22 | 2002-09-06 | Shin-Etsu Chemical Co., Ltd. | Agent hydrofuge aqueux pour le traitement de substrats |
-
2004
- 2004-04-23 TW TW093111339A patent/TWI287530B/zh not_active IP Right Cessation
- 2004-04-26 CN CNB2004800110665A patent/CN100339302C/zh not_active Expired - Fee Related
- 2004-04-26 WO PCT/JP2004/006041 patent/WO2004094311A1/ja active Application Filing
- 2004-04-26 KR KR1020057018574A patent/KR100666411B1/ko active IP Right Grant
- 2004-04-26 US US10/554,233 patent/US7291215B2/en not_active Expired - Fee Related
- 2004-04-26 JP JP2005505816A patent/JP4348335B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4348335B2 (ja) | 2009-10-21 |
KR20060002901A (ko) | 2006-01-09 |
TW200424125A (en) | 2004-11-16 |
CN100339302C (zh) | 2007-09-26 |
US7291215B2 (en) | 2007-11-06 |
WO2004094311A1 (ja) | 2004-11-04 |
CN1777560A (zh) | 2006-05-24 |
TWI287530B (en) | 2007-10-01 |
US20070006776A1 (en) | 2007-01-11 |
JPWO2004094311A1 (ja) | 2006-07-13 |
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