KR100639230B1 - 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치 - Google Patents
출력 드라이버 제어 장치를 갖는 동기식 메모리 장치 Download PDFInfo
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- KR100639230B1 KR100639230B1 KR1020050058128A KR20050058128A KR100639230B1 KR 100639230 B1 KR100639230 B1 KR 100639230B1 KR 1020050058128 A KR1020050058128 A KR 1020050058128A KR 20050058128 A KR20050058128 A KR 20050058128A KR 100639230 B1 KR100639230 B1 KR 100639230B1
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- output driver
- control device
- dll circuit
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- signal
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1063—Control signal output circuits, e.g. status or busy flags, feedback command signals
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1066—Output synchronization
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
- G11C7/1069—I/O lines read out arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
- G11C7/222—Clock generating, synchronizing or distributing circuits within memory device
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/081—Details of the phase-locked loop provided with an additional controlled phase shifter
- H03L7/0812—Details of the phase-locked loop provided with an additional controlled phase shifter and where no voltage or current controlled oscillator is used
Abstract
Description
Claims (6)
- 삭제
- 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치에 있어서,외부클락을 수신하여 내부클락을 출력하는 DLL 회로와, 상기 내부클락에 동기되어 데이타를 출력하는 출력 드라이버와, 상기 출력 드라이버의 동작을 제어하는 출력 드라이버 제어 장치를 구비하며,상기 출력 드라이버 제어 장치는 상기 내부클락이 락킹되어 안정된 상태임을 나타내는 제어 신호를 상기 DLL 회로로부터 수신한 후에 상기 출력 드라이버를 액티브시키고,상기 DLL 회로는 상기 외부클락의 토글링 횟수를 카운트하는 카운터를 구비하며, 상기 카운터에 의한 상기 외부클락의 토글링 횟수가 일정 횟수를 초과하면 상기 DLL 회로는 상기 출력 드라이버 제어 장치를 인에이블시키는 인에이블 신호를 추가로 출력하는 것을 특징으로 하는 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치.
- 제 2 항에 있어서,상기 일정 횟수는 상기 DLL 회로의 출력신호가 안정되었음을 보장하는 최소한의 토글링 횟수인 것을 특징으로 하는 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치.
- 제 2 항에 있어서,상기 출력 드라이버 제어 장치를 제어하는 리셋부를 더 구비하는 것을 특징으로 하는 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치.
- 제 4항에 있어서,상기 리셋부는 상기 동기식 메모리 장치가 파워 다운 모드로 진입하거나, 셀프 리프레쉬 모드로 진입하거나, 상기 DLL 회로가 리셋되는 경우에는 상기 출력 드라이버 제어 장치를 디스에이블시키는 리셋 신호를 출력하는 것을 특징으로 하는 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치.
- 제 5항에 있어서,상기 출력 드라이버 제어 장치는 상기 리셋 신호가 해제된 후에는 상기 내부클락이 락킹되어 안정된 상태임을 나타내는 제어 신호를 상기 DLL 회로로부터 수신한 후에 인에이블되는 것을 특징으로 하는 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치.
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KR1020050058128A KR100639230B1 (ko) | 2005-06-30 | 2005-06-30 | 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치 |
US11/479,640 US7511546B2 (en) | 2005-06-30 | 2006-06-30 | Synchronous memory device with output driver controlller |
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KR1020050058128A KR100639230B1 (ko) | 2005-06-30 | 2005-06-30 | 출력 드라이버 제어 장치를 갖는 동기식 메모리 장치 |
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JP4825429B2 (ja) * | 2005-02-17 | 2011-11-30 | 富士通セミコンダクター株式会社 | 半導体装置 |
US7994833B2 (en) * | 2005-09-28 | 2011-08-09 | Hynix Semiconductor Inc. | Delay locked loop for high speed semiconductor memory device |
US8161310B2 (en) * | 2008-04-08 | 2012-04-17 | International Business Machines Corporation | Extending and scavenging super-capacitor capacity |
US8219740B2 (en) * | 2008-06-25 | 2012-07-10 | International Business Machines Corporation | Flash sector seeding to reduce program times |
US8040750B2 (en) * | 2008-06-25 | 2011-10-18 | International Business Machines Corporation | Dual mode memory system for reducing power requirements during memory backup transition |
US8037380B2 (en) * | 2008-07-08 | 2011-10-11 | International Business Machines Corporation | Verifying data integrity of a non-volatile memory system during data caching process |
CN104601206B (zh) | 2008-07-18 | 2018-01-23 | Lg电子株式会社 | 用于控制主机和控制器之间的消息的方法和装置 |
US8093868B2 (en) * | 2008-09-04 | 2012-01-10 | International Business Machines Corporation | In situ verification of capacitive power support |
KR100988809B1 (ko) * | 2008-11-06 | 2010-10-20 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 출력인에이블 신호 생성 방법 |
US20180133614A1 (en) * | 2016-11-11 | 2018-05-17 | Joseph Kendall | Elastomeric block system for multi-modal play |
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US20070002675A1 (en) | 2007-01-04 |
US7511546B2 (en) | 2009-03-31 |
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