KR100638289B1 - 구조화된 웨이퍼의 표면 변형 방법 - Google Patents

구조화된 웨이퍼의 표면 변형 방법 Download PDF

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Publication number
KR100638289B1
KR100638289B1 KR1020017015751A KR20017015751A KR100638289B1 KR 100638289 B1 KR100638289 B1 KR 100638289B1 KR 1020017015751 A KR1020017015751 A KR 1020017015751A KR 20017015751 A KR20017015751 A KR 20017015751A KR 100638289 B1 KR100638289 B1 KR 100638289B1
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KR
South Korea
Prior art keywords
wafer
abrasive
phase
metal
polymer
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Expired - Fee Related
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KR1020017015751A
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English (en)
Korean (ko)
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KR20020011435A (ko
Inventor
다니엘 비. 쥬니어 펜더그래스
Original Assignee
쓰리엠 이노베이티브 프로퍼티즈 캄파니
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Publication of KR20020011435A publication Critical patent/KR20020011435A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B24B37/245—Pads with fixed abrasives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020017015751A 1999-06-09 1999-10-18 구조화된 웨이퍼의 표면 변형 방법 Expired - Fee Related KR100638289B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/328,916 1999-06-09
US09/328,916 US6234875B1 (en) 1999-06-09 1999-06-09 Method of modifying a surface

Publications (2)

Publication Number Publication Date
KR20020011435A KR20020011435A (ko) 2002-02-08
KR100638289B1 true KR100638289B1 (ko) 2006-10-26

Family

ID=23283024

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017015751A Expired - Fee Related KR100638289B1 (ko) 1999-06-09 1999-10-18 구조화된 웨이퍼의 표면 변형 방법

Country Status (14)

Country Link
US (1) US6234875B1 (enExample)
EP (1) EP1189729B1 (enExample)
JP (1) JP2003501820A (enExample)
KR (1) KR100638289B1 (enExample)
CN (1) CN1352589A (enExample)
AT (1) ATE272465T1 (enExample)
AU (1) AU1317500A (enExample)
BR (1) BR9917355A (enExample)
CA (1) CA2374004A1 (enExample)
DE (1) DE69919230T2 (enExample)
ES (1) ES2224717T3 (enExample)
HK (1) HK1044504B (enExample)
TW (1) TWI231245B (enExample)
WO (1) WO2000074896A1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6390890B1 (en) 1999-02-06 2002-05-21 Charles J Molnar Finishing semiconductor wafers with a fixed abrasive finishing element
US6413153B1 (en) 1999-04-26 2002-07-02 Beaver Creek Concepts Inc Finishing element including discrete finishing members
US6641463B1 (en) 1999-02-06 2003-11-04 Beaver Creek Concepts Inc Finishing components and elements
TW501197B (en) * 1999-08-17 2002-09-01 Hitachi Chemical Co Ltd Polishing compound for chemical mechanical polishing and method for polishing substrate
US7736687B2 (en) * 2006-01-31 2010-06-15 Advance Bio Prosthetic Surfaces, Ltd. Methods of making medical devices
US6976905B1 (en) * 2000-06-16 2005-12-20 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with a phosphate ion-containing polishing system
KR100905266B1 (ko) * 2000-12-01 2009-06-29 도요 고무 고교 가부시키가이샤 연마 패드
US6572463B1 (en) * 2000-12-27 2003-06-03 Lam Research Corp. Methods for making reinforced wafer polishing pads utilizing direct casting and apparatuses implementing the same
US6561889B1 (en) 2000-12-27 2003-05-13 Lam Research Corporation Methods for making reinforced wafer polishing pads and apparatuses implementing the same
US6612916B2 (en) * 2001-01-08 2003-09-02 3M Innovative Properties Company Article suitable for chemical mechanical planarization processes
US6612917B2 (en) * 2001-02-07 2003-09-02 3M Innovative Properties Company Abrasive article suitable for modifying a semiconductor wafer
US6632129B2 (en) 2001-02-15 2003-10-14 3M Innovative Properties Company Fixed abrasive article for use in modifying a semiconductor wafer
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6629879B1 (en) * 2001-05-08 2003-10-07 Advanced Micro Devices, Inc. Method of controlling barrier metal polishing processes based upon X-ray fluorescence measurements
US6811470B2 (en) 2001-07-16 2004-11-02 Applied Materials Inc. Methods and compositions for chemical mechanical polishing shallow trench isolation substrates
US7199056B2 (en) * 2002-02-08 2007-04-03 Applied Materials, Inc. Low cost and low dishing slurry for polysilicon CMP
US6943114B2 (en) * 2002-02-28 2005-09-13 Infineon Technologies Ag Integration scheme for metal gap fill, with fixed abrasive CMP
US7063597B2 (en) 2002-10-25 2006-06-20 Applied Materials Polishing processes for shallow trench isolation substrates
CN100551623C (zh) 2003-01-10 2009-10-21 3M创新有限公司 应用于化学机械平面化的垫结构
US6908366B2 (en) * 2003-01-10 2005-06-21 3M Innovative Properties Company Method of using a soft subpad for chemical mechanical polishing
US6951504B2 (en) * 2003-03-20 2005-10-04 3M Innovative Properties Company Abrasive article with agglomerates and method of use
WO2005000529A1 (en) * 2003-06-03 2005-01-06 Neopad Technologies Corporation Synthesis of a functionally graded pad for chemical mechanical planarization
DE602005006326T2 (de) * 2004-02-05 2009-07-09 Jsr Corp. Chemisch-mechanisches Polierkissen und Polierverfahren
US7086939B2 (en) * 2004-03-19 2006-08-08 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring with integral polymer backing
US7485028B2 (en) 2004-03-19 2009-02-03 Saint-Gobain Performance Plastics Corporation Chemical mechanical polishing retaining ring, apparatuses and methods incorporating same
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
US20050282029A1 (en) * 2004-06-18 2005-12-22 3M Innovative Properties Company Polymerizable composition and articles therefrom
US7150770B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with tie layer, and method of making and using the same
US7150771B2 (en) * 2004-06-18 2006-12-19 3M Innovative Properties Company Coated abrasive article with composite tie layer, and method of making and using the same
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7344575B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Composition, treated backing, and abrasive articles containing the same
US7344574B2 (en) * 2005-06-27 2008-03-18 3M Innovative Properties Company Coated abrasive article, and method of making and using the same
TWI292185B (en) * 2005-07-11 2008-01-01 Fujitsu Ltd Manufacture of semiconductor device with cmp
US8016644B2 (en) * 2007-07-13 2011-09-13 UNIVERSITé LAVAL Method and apparatus for micro-machining a surface
US20090215266A1 (en) * 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
DE102009025242B4 (de) * 2009-06-17 2013-05-23 Siltronic Ag Verfahren zum beidseitigen chemischen Schleifen einer Halbleiterscheibe
DE102009033206A1 (de) * 2009-07-15 2011-01-27 Brand, Guido Polierverfahren und Poliervorrichtung zur Korrektur von geometrischen Abweichungsfehlern auf Präzisionsoberflächen
RU2590749C2 (ru) * 2011-01-22 2016-07-10 Руд. Старке Гмбх Унд Ко. Кг Шлифовальник
JP5934053B2 (ja) * 2012-08-14 2016-06-15 セイコープレシジョン株式会社 Ｘ線処理装置
KR102347711B1 (ko) 2014-04-03 2022-01-06 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리싱 패드 및 시스템과 이의 제조 및 사용 방법
TWI769988B (zh) 2015-10-07 2022-07-11 美商3M新設資產公司 拋光墊與系統及其製造與使用方法
CN111087973B (zh) * 2019-12-17 2021-07-27 吉林大学 一种植物纤维发酵改性增强摩擦材料制备装置及制备方法
US20230347470A1 (en) * 2022-04-28 2023-11-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Pad for chemical mechanical polishing

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4244775A (en) 1979-04-30 1981-01-13 Bell Telephone Laboratories, Incorporated Process for the chemical etch polishing of semiconductors
EP0226931B1 (en) 1985-12-17 1991-02-27 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. A method of preparing semiconductor substrates
JPS62259769A (ja) * 1986-05-02 1987-11-12 Nec Corp シリコンウエハの加工方法
US5399528A (en) 1989-06-01 1995-03-21 Leibovitz; Jacques Multi-layer fabrication in integrated circuit systems
US5152917B1 (en) 1991-02-06 1998-01-13 Minnesota Mining & Mfg Structured abrasive article
TW307801B (enExample) 1992-03-19 1997-06-11 Minnesota Mining & Mfg
MY114512A (en) 1992-08-19 2002-11-30 Rodel Inc Polymeric substrate with polymeric microelements
JPH0811050A (ja) 1994-06-28 1996-01-16 Sony Corp 研磨布及びこれを用いた半導体装置の製造方法
BR9509116A (pt) * 1994-09-30 1997-11-18 Minnesota Mining & Mfg Artigo abrasivo revestido processos para produzir o mesmo e processo para desbastar uma peça dura
US5791969A (en) 1994-11-01 1998-08-11 Lund; Douglas E. System and method of automatically polishing semiconductor wafers
US5643044A (en) 1994-11-01 1997-07-01 Lund; Douglas E. Automatic chemical and mechanical polishing system for semiconductor wafers
US5609517A (en) 1995-11-20 1997-03-11 International Business Machines Corporation Composite polishing pad
JPH09148285A (ja) 1995-11-27 1997-06-06 Sony Corp 化学的機械研磨粒子及び半導体装置の製造方法
JP3440665B2 (ja) 1995-12-20 2003-08-25 ソニー株式会社 研磨布およびその製造方法
US5778481A (en) 1996-02-15 1998-07-14 International Business Machines Corporation Silicon wafer cleaning and polishing pads
TW349896B (en) 1996-05-02 1999-01-11 Applied Materials Inc Apparatus and chemical mechanical polishing system for polishing a substrate
US5692950A (en) 1996-08-08 1997-12-02 Minnesota Mining And Manufacturing Company Abrasive construction for semiconductor wafer modification
US5759427A (en) 1996-08-28 1998-06-02 International Business Machines Corporation Method and apparatus for polishing metal surfaces
US5759917A (en) 1996-12-30 1998-06-02 Cabot Corporation Composition for oxide CMP
JP4163756B2 (ja) 1997-01-13 2008-10-08 ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド ホトリソグラフィーによって形成された表面パターンを有するポリマー研磨パッド及びこれに関する方法
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
US6022268A (en) 1998-04-03 2000-02-08 Rodel Holdings Inc. Polishing pads and methods relating thereto
CA2287404C (en) 1997-04-30 2007-10-16 David A. Kaisaki Method of planarizing the upper surface of a semiconductor wafer
US6224465B1 (en) 1997-06-26 2001-05-01 Stuart L. Meyer Methods and apparatus for chemical mechanical planarization using a microreplicated surface
US6121143A (en) * 1997-09-19 2000-09-19 3M Innovative Properties Company Abrasive articles comprising a fluorochemical agent for wafer surface modification
US6056794A (en) * 1999-03-05 2000-05-02 3M Innovative Properties Company Abrasive articles having bonding systems containing abrasive particles

Also Published As

Publication number Publication date
KR20020011435A (ko) 2002-02-08
JP2003501820A (ja) 2003-01-14
CN1352589A (zh) 2002-06-05
AU1317500A (en) 2000-12-28
US6234875B1 (en) 2001-05-22
EP1189729A1 (en) 2002-03-27
BR9917355A (pt) 2002-02-26
WO2000074896A8 (en) 2001-03-29
DE69919230T2 (de) 2005-08-04
EP1189729B1 (en) 2004-08-04
CA2374004A1 (en) 2000-12-14
WO2000074896A1 (en) 2000-12-14
ATE272465T1 (de) 2004-08-15
HK1044504B (en) 2005-06-30
DE69919230D1 (de) 2004-09-09
TWI231245B (en) 2005-04-21
HK1044504A1 (en) 2002-10-25
ES2224717T3 (es) 2005-03-01

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