KR100628989B1 - 비정질 실리콘 박막의 결정화 방법 - Google Patents
비정질 실리콘 박막의 결정화 방법 Download PDFInfo
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- KR100628989B1 KR100628989B1 KR1020040074344A KR20040074344A KR100628989B1 KR 100628989 B1 KR100628989 B1 KR 100628989B1 KR 1020040074344 A KR1020040074344 A KR 1020040074344A KR 20040074344 A KR20040074344 A KR 20040074344A KR 100628989 B1 KR100628989 B1 KR 100628989B1
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- 239000010409 thin film Substances 0.000 title claims abstract description 111
- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 68
- 238000002425 crystallisation Methods 0.000 title claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 83
- 229910052751 metal Inorganic materials 0.000 claims abstract description 83
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 49
- 239000010408 film Substances 0.000 claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 55
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 40
- 229910052759 nickel Inorganic materials 0.000 claims description 20
- 239000010931 gold Substances 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 16
- 229910052737 gold Inorganic materials 0.000 claims description 16
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 230000008025 crystallization Effects 0.000 abstract description 26
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000002923 metal particle Substances 0.000 description 33
- 239000013078 crystal Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 13
- 238000009792 diffusion process Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000007790 solid phase Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001803 electron scattering Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
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- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
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- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (20)
- 절연기판 상부에 절연막을 형성하는 제1 단계;상기 절연막 상부에 비정질 실리콘 박막을 증착시키는 제2 단계;상기 비정질 실리콘 박막 상부에 덮개층을 형성하는 제3 단계;상기 덮개층 상부에 제1 금속을 증착시키는 제4 단계;상기 제1 금속이 증착된 덮개층 상부에 제2 금속을 증착시키는 단계; 및상기 비정질 실리콘 박막을 결정화하여 다결정 실리콘 박막을 형성하는 제5 단계를 포함하여 이루어진 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 삭제
- 제 1 항에 있어서, 상기 덮개층은,실리콘 질화막 또는 산화 질화막으로 이루어지는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 3 항에 있어서, 상기 실리콘 질화막 또는 산화 질화막은화학적기상증착법(PECVD)에 의해 증착되는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 4 항에 있어서, 상기 실리콘 질화막 또는 산화 질화막을 형성시키기 위한 증착온도는 550℃인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 덮개층의 두께는,10~300nm인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 비정질 실리콘 박막은,비정질 실리콘 화합물인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 제1 금속은,니켈 또는 코발트인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 제2 금속은,금(Au)인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 8 항 또는 제 9 항에 있어서, 상기 제1 금속 및 제2 금속은,이온 빔 방식, 플라즈마 방식, 금속용액 방식, 또는 스퍼터링 방식 중 어느 하나의 방식에 의해 덮개층에 증착되는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 제1 금속의 면밀도는,1012 ~ 1015cm-2 인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 제2 금속의 면밀도는,1011 ~ 1015cm-2 인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 1 항에 있어서, 상기 제5 단계에서 다결정 실리콘 박막은,열처리 공정에 의해 이루어지는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 13 항에 있어서, 상기 열처리 공정은,400℃ 내지 1300℃에서 이루어지는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 13 항에 있어서, 상기 열처리 공정은,처리 시간에 따라 온도가 변화되도록 하는 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 제 15 항에 있어서, 상기 열처리 공정은,도가니(Furnace)에서 장시간 열처리하는 공정, 또는 온도를 급격히 변화시키 는 급속 열처리(RTA) 공정인 것을 특징으로 하는 비정질 실리콘 박막의 결정화 방법.
- 삭제
- 삭제
- 삭제
- 삭제
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101020360B1 (ko) * | 2007-11-26 | 2011-03-08 | 타퉁 유니버시티 | 다결정 반도체 제조 방법 |
US7993994B2 (en) | 2008-09-11 | 2011-08-09 | Samsung Electronics Co., Ltd. | Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same |
US8048783B2 (en) | 2009-03-05 | 2011-11-01 | Samsung Mobile Display Co., Ltd. | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
US8409887B2 (en) | 2009-03-03 | 2013-04-02 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
US8890165B2 (en) | 2009-11-13 | 2014-11-18 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same |
US9117798B2 (en) | 2009-03-27 | 2015-08-25 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20080015666A (ko) | 2006-08-16 | 2008-02-20 | 삼성전자주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
KR100859761B1 (ko) * | 2006-10-23 | 2008-09-24 | 실리콘 디스플레이 (주) | 다결정 실리콘 박막 및 그 제조방법 |
KR101044415B1 (ko) * | 2010-06-22 | 2011-06-27 | 노코드 주식회사 | 다결정 실리콘 박막의 제조방법 |
KR101239845B1 (ko) * | 2011-06-15 | 2013-03-06 | 한국기계연구원 | 태양전지 및 이의 제조방법 |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101020360B1 (ko) * | 2007-11-26 | 2011-03-08 | 타퉁 유니버시티 | 다결정 반도체 제조 방법 |
US7993994B2 (en) | 2008-09-11 | 2011-08-09 | Samsung Electronics Co., Ltd. | Method of forming crystallized silicon and method of fabricating thin film transistor and liquid crystal display using the same |
US8409887B2 (en) | 2009-03-03 | 2013-04-02 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
US9035311B2 (en) | 2009-03-03 | 2015-05-19 | Samsung Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
US8048783B2 (en) | 2009-03-05 | 2011-11-01 | Samsung Mobile Display Co., Ltd. | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
US8546248B2 (en) | 2009-03-05 | 2013-10-01 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer and atomic layer deposition apparatus used for the same |
US9117798B2 (en) | 2009-03-27 | 2015-08-25 | Samsung Display Co., Ltd. | Thin film transistor, method of fabricating the same and organic light emitting diode display device including the same |
US8890165B2 (en) | 2009-11-13 | 2014-11-18 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same |
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