KR100626279B1 - 드라이 에칭장치 - Google Patents

드라이 에칭장치 Download PDF

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Publication number
KR100626279B1
KR100626279B1 KR1019990065975A KR19990065975A KR100626279B1 KR 100626279 B1 KR100626279 B1 KR 100626279B1 KR 1019990065975 A KR1019990065975 A KR 1019990065975A KR 19990065975 A KR19990065975 A KR 19990065975A KR 100626279 B1 KR100626279 B1 KR 100626279B1
Authority
KR
South Korea
Prior art keywords
ceramic
dry etching
lower electrode
electrode
etching apparatus
Prior art date
Application number
KR1019990065975A
Other languages
English (en)
Korean (ko)
Other versions
KR20010058623A (ko
Inventor
정창성
Original Assignee
엘지.필립스 엘시디 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지.필립스 엘시디 주식회사 filed Critical 엘지.필립스 엘시디 주식회사
Priority to KR1019990065975A priority Critical patent/KR100626279B1/ko
Priority to JP2000391690A priority patent/JP4384806B2/ja
Publication of KR20010058623A publication Critical patent/KR20010058623A/ko
Application granted granted Critical
Publication of KR100626279B1 publication Critical patent/KR100626279B1/ko
Priority to JP2007156167A priority patent/JP4708396B2/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
KR1019990065975A 1999-12-30 1999-12-30 드라이 에칭장치 KR100626279B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019990065975A KR100626279B1 (ko) 1999-12-30 1999-12-30 드라이 에칭장치
JP2000391690A JP4384806B2 (ja) 1999-12-30 2000-12-22 ドライ・エッチング装置
JP2007156167A JP4708396B2 (ja) 1999-12-30 2007-06-13 ドライ・エッチング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990065975A KR100626279B1 (ko) 1999-12-30 1999-12-30 드라이 에칭장치

Publications (2)

Publication Number Publication Date
KR20010058623A KR20010058623A (ko) 2001-07-06
KR100626279B1 true KR100626279B1 (ko) 2006-09-22

Family

ID=19633130

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990065975A KR100626279B1 (ko) 1999-12-30 1999-12-30 드라이 에칭장치

Country Status (2)

Country Link
JP (2) JP4384806B2 (ja)
KR (1) KR100626279B1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626279B1 (ko) * 1999-12-30 2006-09-22 엘지.필립스 엘시디 주식회사 드라이 에칭장치
WO2003100817A1 (en) 2002-05-23 2003-12-04 Lam Research Corporation Multi-part electrode for a semiconductor processing plasma reactor and method of replacing a portion of a mutli-part electrode
JP4832222B2 (ja) * 2006-09-04 2011-12-07 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR101297711B1 (ko) * 2007-02-09 2013-08-20 한국과학기술원 플라즈마 처리장치 및 플라즈마 처리방법
JP5056349B2 (ja) * 2007-10-30 2012-10-24 コニカミノルタアドバンストレイヤー株式会社 光学フィルム、光学フィルムの製造方法、それを用いた偏光板及び液晶表示装置
JP5377781B2 (ja) * 2013-02-13 2013-12-25 東京エレクトロン株式会社 載置台およびそれを用いたプラズマ処理装置
JP5941971B2 (ja) * 2014-12-10 2016-06-29 東京エレクトロン株式会社 リング状シールド部材及びリング状シールド部材を備えた基板載置台
CN105200398B (zh) * 2015-08-21 2018-01-12 沈阳拓荆科技有限公司 一种热盘保护装置
CN207743194U (zh) * 2018-01-03 2018-08-17 惠科股份有限公司 一种陶瓷结构、下电极及干蚀刻机

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794480A (ja) * 1993-09-24 1995-04-07 Sumitomo Metal Ind Ltd プラズマ処理方法及びプラズマ処理装置
JP4450983B2 (ja) * 1999-12-22 2010-04-14 東京エレクトロン株式会社 液晶表示体基板用プラズマ処理装置
JP3924721B2 (ja) * 1999-12-22 2007-06-06 東京エレクトロン株式会社 シールドリングの分割部材、シールドリング及びプラズマ処理装置
KR100626279B1 (ko) * 1999-12-30 2006-09-22 엘지.필립스 엘시디 주식회사 드라이 에칭장치

Also Published As

Publication number Publication date
KR20010058623A (ko) 2001-07-06
JP4708396B2 (ja) 2011-06-22
JP4384806B2 (ja) 2009-12-16
JP2007281508A (ja) 2007-10-25
JP2001217231A (ja) 2001-08-10

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