KR100613814B1 - P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법 - Google Patents

P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법 Download PDF

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Publication number
KR100613814B1
KR100613814B1 KR1019980018774A KR19980018774A KR100613814B1 KR 100613814 B1 KR100613814 B1 KR 100613814B1 KR 1019980018774 A KR1019980018774 A KR 1019980018774A KR 19980018774 A KR19980018774 A KR 19980018774A KR 100613814 B1 KR100613814 B1 KR 100613814B1
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South Korea
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layer
type
nitride compound
compound semiconductor
magnesium
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Expired - Lifetime
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KR1019980018774A
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Korean (ko)
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KR19980087334A (ko
Inventor
쯔네노리 아사쯔마
가쯔노리 야나시마
다까오 미야지마
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소니 가부시끼 가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/854—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants

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  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1019980018774A 1997-05-26 1998-05-25 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법 Expired - Lifetime KR100613814B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-135406 1997-05-26
JP13540697A JP3642157B2 (ja) 1997-05-26 1997-05-26 ｐ型ＩＩＩ族ナイトライド化合物半導体、発光ダイオードおよび半導体レーザ

Publications (2)

Publication Number Publication Date
KR19980087334A KR19980087334A (ko) 1998-12-05
KR100613814B1 true KR100613814B1 (ko) 2006-12-19

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ID=15150989

Family Applications (1)

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KR1019980018774A Expired - Lifetime KR100613814B1 (ko) 1997-05-26 1998-05-25 P형 ⅲ족 나이트라이드 화합물 반도체 및 그 제조 방법

Country Status (6)

Country Link
US (1) US6104039A (cg-RX-API-DMAC7.html)
EP (1) EP0881666B2 (cg-RX-API-DMAC7.html)
JP (1) JP3642157B2 (cg-RX-API-DMAC7.html)
KR (1) KR100613814B1 (cg-RX-API-DMAC7.html)
DE (1) DE69803721T3 (cg-RX-API-DMAC7.html)
TW (1) TW387106B (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157881A1 (ko) * 2012-04-19 2013-10-24 서울반도체 주식회사 반도체 장치 및 이를 제조하는 방법
KR20180058725A (ko) * 2015-09-30 2018-06-01 산켄덴키 가부시키가이샤 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법

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PL183687B1 (pl) * 1997-06-06 2002-06-28 Ct Badan Sposób wytwarzania półprzewodnikowych związków grupy A-B o przewodnictwie elektrycznym typu p i typu n
JP2000208874A (ja) 1999-01-12 2000-07-28 Sony Corp 窒化物半導体と、窒化物半導体発光装置と、窒化物半導体の製造方法と、半導体発光装置の製造方法
EP2276059A1 (en) * 2000-08-04 2011-01-19 The Regents of the University of California Method of controlling stress in gallium nitride films deposited on substrates
US7692182B2 (en) 2001-05-30 2010-04-06 Cree, Inc. Group III nitride based quantum well light emitting device structures with an indium containing capping structure
US6958497B2 (en) * 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
US7015515B2 (en) * 2001-06-08 2006-03-21 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device having a superlattice structure
JP2004119513A (ja) * 2002-09-24 2004-04-15 Toshiba Corp 半導体装置及びその製造方法
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP4519693B2 (ja) * 2005-03-28 2010-08-04 日本電信電話株式会社 窒化物半導体
WO2006112167A1 (ja) 2005-04-01 2006-10-26 Sharp Kabushiki Kaisha ｐ型窒化物半導体の製造方法及びその方法を用いて作製された半導体装置
EP1883140B1 (de) 2006-07-27 2013-02-27 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht und Dotierungsgradienten
PL1883119T3 (pl) 2006-07-27 2016-04-29 Osram Opto Semiconductors Gmbh Półprzewodnikowa struktura warstwowa z supersiecią
EP1883141B1 (de) 2006-07-27 2017-05-24 OSRAM Opto Semiconductors GmbH LD oder LED mit Übergitter-Mantelschicht
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same
KR100925164B1 (ko) 2007-12-13 2009-11-05 서울옵토디바이스주식회사 ｐ형 질화물 반도체층 형성 방법 및 그것을 갖는 발광 소자
US8604461B2 (en) * 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
US8575592B2 (en) 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
CN103236477B (zh) * 2013-04-19 2015-08-12 安徽三安光电有限公司 一种led外延结构及其制备方法
KR101515024B1 (ko) * 2013-10-22 2015-05-04 경북대학교 산학협력단 질화물 반도체 트랜지스터 및 그 제조방법
US9293648B1 (en) 2015-04-15 2016-03-22 Bolb Inc. Light emitter with a conductive transparent p-type layer structure
TWI566430B (zh) * 2015-05-06 2017-01-11 嘉晶電子股份有限公司 氮化物半導體結構
US9401455B1 (en) 2015-12-17 2016-07-26 Bolb Inc. Ultraviolet light-emitting device with lateral tunnel junctions for hole injection
US10276746B1 (en) 2017-10-18 2019-04-30 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
JP7181045B2 (ja) * 2018-10-12 2022-11-30 株式会社デンソー 窒化物半導体装置の製造方法
EP3699964B1 (en) 2019-02-22 2023-08-23 Bolb Inc. Polarization electric field assisted hole supplier and p-type contact structure, light emitting device and photodetector using the same
US10916680B2 (en) 2019-03-06 2021-02-09 Bolb Inc. Heterostructure and light-emitting device employing the same
US11107951B2 (en) 2019-03-06 2021-08-31 Bolb Inc. Heterostructure for light emitting device or photodetector and light-emitting device employing the same
US10950750B2 (en) 2019-03-06 2021-03-16 Bolb Inc. Heterostructure and light-emitting device employing the same
US10833221B2 (en) 2019-03-06 2020-11-10 Bolb Inc. Heterostructure and light-emitting device employing the same
CN113707775B (zh) * 2019-03-06 2022-06-03 博尔博公司 异质结构以及采用异质结构的发光器件

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US5005057A (en) * 1989-04-28 1991-04-02 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode and method of manufacturing the same
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser

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US4862471A (en) * 1988-04-22 1989-08-29 University Of Colorado Foundation, Inc. Semiconductor light emitting device
US6346720B1 (en) * 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US5831277A (en) * 1997-03-19 1998-11-03 Northwestern University III-nitride superlattice structures

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5005057A (en) * 1989-04-28 1991-04-02 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode and method of manufacturing the same
US5146465A (en) * 1991-02-01 1992-09-08 Apa Optics, Inc. Aluminum gallium nitride laser

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Appl.Phys.Lett.69(24).3737(1996.12.09) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157881A1 (ko) * 2012-04-19 2013-10-24 서울반도체 주식회사 반도체 장치 및 이를 제조하는 방법
KR20180058725A (ko) * 2015-09-30 2018-06-01 산켄덴키 가부시키가이샤 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법
KR102658784B1 (ko) * 2015-09-30 2024-04-17 산켄덴키 가부시키가이샤 반도체 기체, 반도체 장치, 반도체 기체의 제조 방법, 및, 반도체 장치의 제조 방법

Also Published As

Publication number Publication date
JPH10326911A (ja) 1998-12-08
DE69803721D1 (de) 2002-03-21
DE69803721T2 (de) 2002-09-12
DE69803721T3 (de) 2011-06-09
JP3642157B2 (ja) 2005-04-27
EP0881666B1 (en) 2002-02-06
EP0881666B2 (en) 2010-11-24
US6104039A (en) 2000-08-15
KR19980087334A (ko) 1998-12-05
TW387106B (en) 2000-04-11
EP0881666A2 (en) 1998-12-02
EP0881666A3 (en) 1999-08-25

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