KR100590711B1 - Processing system - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a processing system, comprising: controlling a temperature and humidity in a first block in which a process for applying an anti-reflection film on a wafer is performed and in a second block in which a process for applying a resist film on a wafer is performed. In the third block in which the clean air of the downflow is supplied from the upper part through the temperature-humidity regulator for processing, and the processing for developing the exposed resist film is performed, the upper-down from the upper part via the temperature regulator for controlling the temperature only. In the fourth block in which the clean air of the flow is supplied and the wafer transfer between the blocks is performed, the clean air of the downflow is directly supplied so that a technique for reducing the cost for forming the environment of the system is proposed. do.

Description

Processing System {PROCESSING SYSTEM}

1 is a plan view showing the configuration of a coating and developing treatment system according to an embodiment of the present invention.

FIG. 2 is a diagram showing the configuration of an antireflection film coating unit group and a resist coating unit group in the coating and developing processing system shown in FIG. 1.

FIG. 3 is a diagram showing the configuration of a group of developing units in the coating and developing processing system shown in FIG. 1.

FIG. 4 is a diagram illustrating a configuration of a heat treatment unit group in the coating and developing treatment system shown in FIG. 1.

FIG. 5 is a diagram illustrating a configuration of a first conveying apparatus in the coating and developing treatment system shown in FIG. 1.

Fig. 6 is a diagram showing the configuration of a temperature controller in the coating and developing treatment system according to one embodiment of the present invention.

Fig. 7 is a diagram showing the configuration of an antireflection film coating unit group and a resist coating unit group related to another embodiment.

<Description of the symbols for the main parts of the drawings>

1: coating and developing processing system 2: cassette station

3: processing station 4: exposure apparatus

5; Interface unit 10: cassette mounting table

11, 110: wafer carrier 12: transfer path

20: antireflection coating unit 21, 22: antireflection coating unit

30: resist coating unit group 31, 32: resist coating unit

40: Developing unit group 41 to 44: Developing unit

50: heat treatment unit group 51: extension unit

52: alignment unit 61: exchange table

62-64: conveying apparatus 71, 72: wall part

73: normal support 74: conveying means

75: motor 76: carrier stage

77, 78: tweezers 81: temperature and humidity regulator

82, 84: chemical filter 83: temperature controller

85: clean air source 111: rail

B1: first block B2: second block

B3: third block B4: fourth block

C: cassette CP: cup

CPL: Cold Plate W: Wafer

The present invention relates to a processing system.

In the photoresist processing step in semiconductor device manufacturing, for example, a resist liquid is supplied to a substrate such as a semiconductor wafer (hereinafter referred to as a "wafer") to form a resist film, and a predetermined pattern is exposed to the wafer. The developing solution is supplied to the developer. In performing such a series of processes, the coating and developing process system is used conventionally.

Here, in these series of processes, it is necessary to adjust various environments, such as temperature, humidity, ammonia concentration, and a particle state. For this reason, the coating and developing processing system conventionally supplies clean air sent by the temperature adjusting device from the upper part of the system to form a downflow of clean air, and inserts a chemical filter into the supply port of clean air.

However, among these series of processes, for example, the process of developing the resist film has the same environment as the process of forming the resist film, although it is not necessary to consider the humidity much compared with the process of forming the resist film. More than necessary humidity control is performed. For example, although the process of developing a resist film does not need to consider particle number compared with the process of forming a resist film, since it is set in the same environment as the process of forming a resist film, the clean air of downflow It can be said that it is supplied more than necessary. In addition, for example, when a process of forming an anti-reflection film on a wafer prior to application of a resist is provided, clean air is supplied through a chemical filter even though the concentration of ammonia is not a problem in this process. Therefore, there is a problem that a chemical filter of more than necessary number is used. As a result, a problem arises that the cost for forming the system environment is increased.

An object of the present invention is to provide a processing system that can reduce the cost for forming a system environment.

In order to solve the above problems, the processing system of the present invention comprises a first block in which a process for applying an antireflection film on a substrate is performed, a second block in which a process for applying a resist film on a substrate is performed, and an exposure; A third block in which the processing for developing the resist film is performed and a fourth block in which the transfer of the substrate is carried out between these blocks, wherein the first and second blocks control temperature and humidity, and the third block The block controls the temperature, and the fourth block does not adjust the temperature.

According to the structure related to this invention, since it divides into blocks according to the process content, and controls each block to the environment suitable for it, the cost for forming the environment of a system can be reduced. Specifically, it can be said that the humidity at the time of film formation has a large influence on the film thickness, but the humidity at the time of development has little relation to the development treatment, so that the temperature and humidity are controlled in the first and second blocks. In the third block, temperature is controlled without controlling humidity. In addition, since temperature and humidity do not have much relation at the time of conveyance of a board | substrate, temperature adjustment is not performed in a 4th block. This reduces costs by reducing the number of facilities for forming the environment of the system as a whole.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

1 is a view showing the configuration of a coating and developing treatment system according to an embodiment of the present invention.

As shown in Fig. 1, the coating and developing processing system 1 carries out 25 wafers W from the outside in a cassette unit to the coating and developing processing system 1 from outside, or to the cassette C, for example. A cassette station 2 for carrying in and out of the wafer W, and a processing station 3 formed by arranging a plurality of sheet-type processing apparatuses for performing a predetermined process on the wafer W in a coating and developing process step. And the interface part 5 for exchanging the wafer W between the exposure apparatus 4 provided adjacent to this processing station 3, and is integrally connected.

In the cassette station 2, at the position of the positioning projection 10a on the cassette mounting table 10, a plurality of cassettes C face the entrance and exit of the wafer W toward the processing station 3 side in the X direction ( Along the vertical direction in FIG. 1). Then, the wafer carrier 11 that is movable in the cassette C array direction (X direction) and the wafer W accommodated in the cassette C (Z direction: vertical direction) is moved along the transport path 12. It is movable and can enter selectively with respect to each cassette C, respectively.

The wafer carrier 11 is configured to be freely rotated in the θ direction, and is configured to allow entry into the extension unit 51 and the alignment unit 52 belonging to the fifth block B5 described later. .

The processing station 3 is divided into blocks according to the processing contents. Specifically, the processing station 3 performs a process for applying a resist film on a wafer W and a first block B1 on which a process for applying an anti-reflection film on a wafer W is performed. The second block B2, the third block B3 to be subjected to the processing for developing the exposed resist film, and the fifth and sixth blocks B5 and B6 to be subjected to heat treatment to the wafer W; And the fourth block B4 in which the wafer W is conveyed between these blocks B1, B2, B3, B5, and B6. And on the back side of the processing station 3, the 1st block B1 and the 2nd block B2 are arrange | positioned adjacent, the 3rd block B3 is arrange | positioned at the front side of the processing station 3, The fourth block B4 is disposed between the first block B1 and the second block and the third block, and the fifth and sixth blocks B5 and B6 are disposed on both sides of the processing station 3. It is arranged.

Here, the anti-reflection film coating unit group 20 is in the first block B1, the resist coating unit group 30 is in the second block B2, and the developing unit group 40 is in the third block B3. The heat treatment unit groups 50 are disposed in the fifth and sixth blocks B5 and B6, respectively.

As shown in FIG. 2, the antireflection film coating unit group 20 is coated with an antireflection film by placing the wafer W on a spin chuck in a cup CP, and applying the antireflection film coating treatment to the wafer W. The antireflection coating unit 21, 22 to be performed is arranged in two stages above and below. Similarly, in the resist coating unit group 30, the resist coating units 31 and 32 are formed by applying a resist film by placing the wafer W on a spin chuck in a cup CP, and performing a resist film coating process on the wafer W. ) Is arranged in two stages.

As shown in FIG. 3, the developing unit group 40 develops a wafer by raising a wafer W on a spin chuck in a cup CP, supplies a developing solution, and performs a developing process on the wafer W. As shown in FIG. (41-44) are arrange | positioned at the upper and lower two stages of two left and right rows. In addition, you may arrange | position a peripheral exposure unit with respect to one unit among these, for example.

Here, between the adjacent units, specifically, between the anti-reflection coating unit 21 and the resist coating unit 31, between the anti-reflection coating unit 22 and the resist coating unit 32, the development processing unit 41 And between the developing unit 42 and the developing unit 42 and the developing unit 44, a cooling plate CPL having the same environment as these units is disposed. These cooling plates CPL are comprised, for example by providing the some support pin (not shown) which supports the wafer W on a cooling plate.

As shown in FIG. 4, the heat treatment unit group 50 includes an alignment unit 51 for aligning the wafer W, an extension unit 52 for waiting the wafer W, and a wafer W. As shown in FIG. The heat treatment units 53 to 57 for heat treatment are arranged in two sets adjacent to one another, for example, overlapped in seven stages.

The center of the fourth block B4 is provided with a transfer table 61 on which the wafer W can be placed. The anti-reflection coating unit group 20, the resist coating unit group 30, and the development processing unit group 40 face each other with the exchange base 61 interposed therebetween, and the anti-reflection coating unit group 20 The 1st conveyance apparatus 62 is between the sending and receiving stage 61, and the 2nd conveyance apparatus 63 is between the resist coating unit group 30 and the receiving and receiving stage 61, and the developing unit group 40 ) And the third transfer device 64 are respectively provided between the transfer tray 61 and the transfer tray 61.

When the 1st conveyance apparatus 62, the 2nd conveyance apparatus 63, and the 3rd conveyance apparatus 64 have basically the same structure, and the structure of the 1st conveyance apparatus 62 is demonstrated based on FIG. 5, The 1st conveyance apparatus 62 is a wafer conveyance means which can raise and lower in the up-down direction (Z direction) inside the normal support body 73 comprised by the integral wall parts 71 and 72 which mutually connect and oppose at the upper end and the lower end. Equipped with 74. The ordinary support body 73 is connected to the rotating shaft of the motor 75, and rotates integrally with the wafer conveying means 74 about the rotating shaft by the rotating driving force of the motor 75. Accordingly, the wafer transfer means 74 is free to rotate in the θ direction.

On the conveyance base 76 of the wafer conveyance means 74, several tweezers 77 and 78 which hold | maintain the wafer W are equipped up and down. Each tweezers 77 and 78 have basically the same configuration, and have a shape and size that can pass through side openings between the two wall portions 71 and 72 of the support body 73. In addition, each tweezers 77 and 78 is made to move freely in the front-back direction by the motor (not shown) integrated in the carrier base 76. As shown in FIG.

The interface unit 5 is equipped with a wafer carrier 110 capable of entering the extension unit 51 or the alignment unit 52 to which the sixth block B6 belongs. The wafer carrier 110 is free to move along the rail 111 in the X direction and to move up and down in the Z direction (up and down direction), and to rotate freely in the θ direction. And it is comprised so that the wafer W may be conveyed with respect to the exposure apparatus 4. As shown in FIG.

6 is a diagram showing the configuration of a temperature control system in the coating and developing processing system according to this embodiment.

As shown in FIG. 6, the first block B1 is subjected to the process for applying the antireflection film on the wafer W, and the second block B2 is performed for the application of the resist film on the wafer W. As shown in FIG. ), The clean air of the downflow is supplied from the upper part through the temperature-humidity regulator 81 for controlling temperature and humidity. In addition, the clean air adjusted by the temperature via the chemical filter 82 is supplied to the 2nd block B2, and the air adjusted by temperature is directly supplied to the 1st block B1.

Further, in the third block B3 where the processing for developing the exposed resist film is performed, clean air of the downflow is supplied from the upper portion through the temperature controller 83 for controlling only the temperature. In addition, the 3rd block B3 is supplied with the clean air temperature-controlled through the chemical filter 84. As shown in FIG.

Further, in the fourth block B4 where wafer transfer between blocks is performed, clean air of downflow is supplied directly without passing through such a temperature regulator or a chemical filter.

These clean air are intended to be supplied from a clean air source 85.

In addition, in the coating and developing processing system 1 according to the present embodiment, the second block B2 is made higher by making the clean air blowing pressure in the second block B2 higher than that in the third block B3. Is a positive pressure higher than that of the third block B3, and the clean air blowing pressure in the third block B3 is higher than that in the fourth block B4, whereby the third block B3 is The positive pressure is higher than that of the fourth block B4, and the clean air blowing pressure in the fourth block B4 is higher than that in the first block B1, whereby the fourth block B4 is the first block ( It has a higher positive pressure than B1). By forming such a relationship, the first block B1 can be used, for example, as a particle collection part in the system, especially when the antireflection film is not very important at the time of exposure. However, when the antireflection film has a great influence during exposure, the second block B2 is made to have a higher positive pressure than the first block, the first block is made to be a positive pressure higher than the third block, and the third block B3 is made. What is necessary is just to make positive pressure higher than 4th block B4.

The coating and developing treatment system 1 according to the embodiment of the present invention is configured as described above. Next, the operation of the coating and developing treatment system 1 will be described.

First, in the cassette station 2, the wafer carrier 11 enters the cassette C and takes out one unprocessed wafer W. As shown in FIG. Next, this wafer W is conveyed to the alignment unit 52 which belongs to the 5th block B5 by the wafer carrier 11. The wafer W whose alignment has been completed in the alignment unit 52 is disposed between the antireflective coating unit 21 and 22 and the resist coating unit 31 and 32 by the first transfer device 62. It is conveyed to the cooled plate CPL. Next, the cooled wafer W is conveyed to the anti-reflection film coating units 21 and 22 to apply the anti-reflection film.

Next, the anti-reflection film-coated wafer W is transferred to the heat treatment units 53 to 57 belonging to the fifth block B5 by the first transfer device 62. Next, the heated wafer W is a cooling plate CPL disposed between the antireflection coating unit 21 and 22 and the resist coating unit 31 and 32 by the first transfer device 62. Is returned. Next, the cooled wafer W is conveyed to the resist coating units 31 and 32 to apply a resist film.

Next, the wafer W to which the resist film is applied is transferred to the heat treatment units 53 to 57 belonging to the sixth block B6 by the second transfer device 63. Next, the heated wafer W is carried into the extension unit 52 belonging to the sixth block B6 and waits there.

Next, the wafer W is conveyed from the extension unit 52 to the exposure apparatus 4 by the wafer carrier 110, and predetermined exposure processing is performed.

The wafer W whose pattern is exposed by the exposure apparatus 4 is carried into the extension unit 52 which belongs to the 6th block B6 by the wafer carrier 110, and the 3rd conveying apparatus 64 is carried out. Is conveyed to the heat treatment units 53 to 57 belonging to the sixth block B6. Next, the heat-processed wafer W is conveyed by the third conveying apparatus 64 to the cooling plate PCL arrange | positioned between the developing process units 41 and 42 and the developing process units 43 and 44. FIG. do. Next, the cooled wafer W is conveyed by the third conveying device 64 to the developing units 41, 43, 42, 44, and subjected to the developing process.

Next, the wafer W subjected to the development treatment is carried into the extension unit 52 belonging to the sixth block B6 by the third transfer device 64 and waits there. Then, it is carried out by the wafer carrier 11 from the extension unit 52 and stored in the cassette C on the cassette mounting table 10. As a result, a series of coating and developing processes for the wafer W are completed.

As described above, in the coating and developing processing system 1 of the present embodiment, the blocks are divided into blocks B1 to B6 according to the contents of the processing, and the environment, for example, temperature, humidity, pressure, etc., is controlled to match each block. Therefore, the cost for forming a system environment can be reduced.

Also, since the second block has a higher positive pressure than the third block, the third block has a higher positive pressure than the fourth block, and the fourth block has a higher positive pressure than the first block, that is, the number of particles is reduced Since the desired blocks are positively pressured to allow particles to flow into blocks of negative pressure, there is no need to form a strong down flow of clean air.

In addition, since the temperature-controlled air is supplied to the second block through the chemical filter, and the temperature-controlled air is directly supplied to the first block, the number of use of the chemical filter can be reduced.

In addition, a first processing unit for applying an anti-reflection film on the substrate is disposed in the first block, a second processing unit for applying a resist film on the substrate is disposed in the second block, and an exposed resist is disposed in the third block. A third processing unit for developing the film is disposed, the number of first processing units and the number of second processing units are almost equal, and the sum of the number of first processing units and the number of second processing units is almost equal to the number of third processing units. Since it is comprised so that it may be set as the optimal system suited to the processing time of each processing unit.

Further, a first block and a second block are adjacent to each other, and a fourth block exists between the first block, the second block, and the third block, and the fourth block includes a first conveying apparatus for the first block. And a second conveying apparatus for the second block, a third conveying apparatus for the third block, and a sending / receiving table for exchanging substrates between the conveying apparatuses, are arranged. It can be configured as the optimal system in time.

Moreover, since the cooling plate for cooling the board | substrate before a process is arrange | positioned in the 1st block, the 2nd block, and the 3rd block, respectively, cooling before a process can be performed in the optimal environment suitable for a process.

Next, another embodiment of the present invention will be described.

In the above-described embodiment, the first block B1 is subjected to the process for applying the antireflection film on the wafer W and the second block B2 is performed for the application of the resist film on the wafer W. Although it was arrange | positioned adjacently, as shown in FIG. 7, you may make it arrange | position the 2nd block B2 on the upper end of the 1st block B1. In this case, the temperature control in the second block B2 can be performed more accurately, and the resist film can be applied with a more uniform thickness. Also in this case, the first block B1 and the second block B2 are made to have a higher positive pressure than the third block B3, and the third block B3 is made to have a higher positive pressure than the fourth block B4. Particles can minimize the impact of the system.

In addition, in the above embodiment, the wafer is used as the substrate as an example, but the present invention can be applied to other substrates such as LCD substrates. It goes without saying that the first block B1 may be supplied with clean air regulated by a chemical filter.

As described above, according to the present invention, since each of the blocks is divided into blocks according to the contents of the process and controlled in an environment suitable for each block, the cost for forming an environment of the system can be reduced.

Claims (14)

A first block on which a process for applying an antireflection film on a substrate is performed; A second block on which a process for applying a resist film on a substrate is performed; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; Means for controlling temperature and humidity for the first and second blocks; Means for controlling temperature for the third block; Means for making the second block a higher positive pressure than the third block, making the third block a higher positive pressure than the fourth block, and making the fourth block a positive pressure higher than the first block. Processing system. A first block on which a process for applying an antireflection film on a substrate is performed; A second block on which a process for applying a resist film on a substrate is performed; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; Means for controlling temperature and humidity for the first and second blocks; Means for controlling temperature for the third block; And further comprising means for making the second block a higher positive pressure than the first block, making the first block a higher positive pressure than the third block, and making the third block a higher positive pressure than the fourth block. Processing system characterized by the above-mentioned. The method according to claim 1 or 2, The first block and the second block are disposed opposite to the third block with respect to the fourth block, and the atmosphere of the first block and the second block is controllable independently of the atmosphere of the third block. Processing system, characterized in that. The method according to claim 1 or 2, The second block is supplied with temperature regulated air via a chemical filter, and the first block is directly supplied with temperature regulated air. The method according to claim 1 or 2, And means for controlling the system to apply an antireflection film on the substrate in the first block, then apply a resist film on the substrate in the second block, and then develop the resist film after exposure in the third block. Processing system characterized by the above-mentioned. The method according to claim 1 or 2, The first block has a first processing unit for applying an anti-reflection film on the substrate, the second block has a second processing unit for applying a resist film on the substrate, and the third block is exposed. A third processing unit for developing the resist film is disposed, The number of the first processing unit and the number of the second processing units are almost equal, And a sum of the number of the first processing unit and the number of the second processing unit is approximately equal to the number of the third processing unit. The method according to claim 1 or 2, The first block and the second block are adjacent to each other, and the fourth block exists between the first block and the second block and the third block, The fourth block includes a first conveying apparatus for the first block, a second conveying apparatus for the second block, a third conveying apparatus for the third block, and transfer of substrates between these conveying apparatuses. A processing system, characterized in that the exchange stage for arranging the arrangement. The method according to claim 1 or 2, And a cooling plate for cooling the substrate before processing, respectively, in the first block, the second block, and the third block. The method according to claim 1 or 2, And the second block is more precisely regulated in temperature than the first block. A first block on which a process for applying an antireflection film on a substrate is performed; A second block disposed above the first block and subjected to a process for applying a resist film onto the substrate; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; Means for supplying clean air having a controlled temperature and humidity from above and below the first and second blocks; Means for supplying a temperature controlled clean air from above to above the third block; Means for supplying clean air from above the fourth block downward; And a means for causing the first block and the second block to have a higher positive pressure than the third block and the third block to a higher positive pressure than the fourth block. delete A first block on which a process for applying an antireflection film on a substrate is performed; A second block on which a process for applying a resist film on a substrate is performed; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; Means for making said second block higher positive pressure than said third block, making said third block higher positive pressure than said fourth block, and making said fourth block higher positive pressure than said first block. Processing system. A first block on which a process for applying an antireflection film on a substrate is performed; A second block on which a process for applying a resist film on a substrate is performed; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; Means for making the second block a higher positive pressure than the first block, making the first block a higher positive pressure than the third block, and making the third block a higher positive pressure than the fourth block. Processing system. A first block on which a process for applying an antireflection film on a substrate is performed; A second block disposed at an upper end of the first block and subjected to a process for applying a resist film onto the substrate; A third block in which a process for developing the exposed resist film is performed; A fourth block for carrying the substrate between the first block, the second block and the third block; And a means for bringing the first block and the second block into a higher positive pressure than the third block and bringing the third block into a higher positive pressure than the fourth block.

Images