KR100581978B1 - 열전기 소자 및 이의 사용 방법 및 열전기 장치 - Google Patents

열전기 소자 및 이의 사용 방법 및 열전기 장치 Download PDF

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Publication number
KR100581978B1
KR100581978B1 KR1020027014293A KR20027014293A KR100581978B1 KR 100581978 B1 KR100581978 B1 KR 100581978B1 KR 1020027014293 A KR1020027014293 A KR 1020027014293A KR 20027014293 A KR20027014293 A KR 20027014293A KR 100581978 B1 KR100581978 B1 KR 100581978B1
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South Korea
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type doped
doped layer
thermoelectric element
thermoelectric
layer
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Expired - Fee Related
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KR1020027014293A
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English (en)
Korean (ko)
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KR20020093070A (ko
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게르하르트 슈판
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게르하르트 슈판
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling

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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
KR1020027014293A 2000-05-02 2001-04-25 열전기 소자 및 이의 사용 방법 및 열전기 장치 Expired - Fee Related KR100581978B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ATA763/2000 2000-05-02
AT0076300A AT410492B (de) 2000-05-02 2000-05-02 Thermoelektrisches element mit mindestens einer n-schicht und mindestens einer p-schicht

Publications (2)

Publication Number Publication Date
KR20020093070A KR20020093070A (ko) 2002-12-12
KR100581978B1 true KR100581978B1 (ko) 2006-05-23

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Family Applications (1)

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KR1020027014293A Expired - Fee Related KR100581978B1 (ko) 2000-05-02 2001-04-25 열전기 소자 및 이의 사용 방법 및 열전기 장치

Country Status (10)

Country Link
US (1) US6762484B2 (cg-RX-API-DMAC7.html)
EP (1) EP1287566B1 (cg-RX-API-DMAC7.html)
JP (1) JP3921602B2 (cg-RX-API-DMAC7.html)
KR (1) KR100581978B1 (cg-RX-API-DMAC7.html)
CN (1) CN100352073C (cg-RX-API-DMAC7.html)
AT (1) AT410492B (cg-RX-API-DMAC7.html)
AU (1) AU2001250149A1 (cg-RX-API-DMAC7.html)
DE (1) DE50100847D1 (cg-RX-API-DMAC7.html)
RU (1) RU2248647C2 (cg-RX-API-DMAC7.html)
WO (1) WO2001084641A1 (cg-RX-API-DMAC7.html)

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US7038234B2 (en) * 2001-12-12 2006-05-02 Hi-Z Technology, Inc. Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs
WO2006005126A1 (en) * 2004-07-12 2006-01-19 Newsouth Innovations Pty Limited Reversible thermoelectric nanomaterials
US20060048809A1 (en) * 2004-09-09 2006-03-09 Onvural O R Thermoelectric devices with controlled current flow and related methods
US20060090787A1 (en) * 2004-10-28 2006-05-04 Onvural O R Thermoelectric alternators and thermoelectric climate control devices with controlled current flow for motor vehicles
DE102005036407A1 (de) * 2005-07-29 2007-02-01 Endress + Hauser Wetzer Gmbh + Co. Kg Auswerteeinheit für kontinuierliche Thermoelemente
US20080017238A1 (en) * 2006-07-21 2008-01-24 Caterpillar Inc. Thermoelectric device
AT505168B1 (de) * 2007-06-29 2008-11-15 Span Gerhard Dipl Ing Dr Thermoelektrisches element
US8283553B1 (en) 2007-09-21 2012-10-09 Hrl Laboratories, Llc Photon enhanced thermoelectric power generation
DE102007050741A1 (de) * 2007-10-22 2009-04-23 O-Flexx Technologies Gmbh Thermoelektrischer Generator
DE102008032856A1 (de) * 2008-07-14 2010-01-28 O-Flexx Technologies Gmbh Wärmeüberträger für ein thermoelektrisches Dünnschichtelement
DE102009032906A1 (de) * 2009-07-10 2011-01-20 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
JP5560610B2 (ja) * 2009-08-26 2014-07-30 富士通株式会社 発電装置及びそのような発電装置を備えた発電システム
DE102009048985A1 (de) 2009-10-09 2011-04-21 O-Flexx Technologies Gmbh Modul mit mehreren thermoelektrischen Elementen
DE102010005340A1 (de) 2010-01-21 2011-07-28 O-Flexx Technologies GmbH, 47228 Verfahren und Vorrichtung zur Strukturierung einer auf einem Substrat angeordneten Lage
KR101701349B1 (ko) * 2010-06-10 2017-02-01 엘지이노텍 주식회사 냉각전용 열전소자 및 그 제조 방법
US20120006027A1 (en) * 2010-07-07 2012-01-12 Osman Kibar Renewable energy extraction
FR2963165A1 (fr) * 2010-07-22 2012-01-27 St Microelectronics Crolles 2 Procede de generation d'energie electrique dans un dispositif semi-conducteur, et dispositif correspondant
FR2968134B1 (fr) 2010-11-26 2013-05-17 Schneider Electric Ind Sas Module thermoélectrique a rendement amélioré
RU2444814C1 (ru) * 2011-03-29 2012-03-10 Юрий Феликсович Верниковский Термоэлектрический кластер, способ его работы, устройство соединения в нем активного элемента с теплоэлектропроводом, генератор (варианты) и тепловой насос (варианты) на его основе
DE102011001653A1 (de) * 2011-03-30 2012-10-04 O-Flexx Technologies Gmbh Thermoelektrische Anordnung
CN102779936A (zh) * 2011-05-12 2012-11-14 冯建明 Pn结四极管式热电转换和制冷制热装置
RU2477828C1 (ru) * 2011-10-25 2013-03-20 Святослав Михайлович Сергеев Тепловой диод
DE102012209619A1 (de) 2012-06-08 2013-12-12 Robert Bosch Gmbh Thermoelektrisches Element zur Umwandlung von Energie zwischen thermischer Energie und elektrischer Energie und ein Verfahren zum Auseinanderbauen des thermoelektrischen Elements
CN104956505B (zh) * 2013-01-24 2017-09-19 欧-弗莱克斯科技有限公司 热电元件以及其制造方法
WO2014114559A1 (de) 2013-01-24 2014-07-31 O-Flexx Technologies Gmbh Thermoelektrisches bauteil, verfahren zu dessen herstellung und thermoelektrischer generator
RU2576414C2 (ru) * 2014-05-21 2016-03-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Курганский государственный университет" Охлаждающее устройство
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Also Published As

Publication number Publication date
RU2248647C2 (ru) 2005-03-20
JP3921602B2 (ja) 2007-05-30
ATA7632000A (de) 2002-09-15
AT410492B (de) 2003-05-26
EP1287566A1 (de) 2003-03-05
WO2001084641A1 (de) 2001-11-08
CN100352073C (zh) 2007-11-28
JP2003533031A (ja) 2003-11-05
DE50100847D1 (de) 2003-11-27
KR20020093070A (ko) 2002-12-12
CN1441972A (zh) 2003-09-10
US20030042497A1 (en) 2003-03-06
EP1287566B1 (de) 2003-10-22
AU2001250149A1 (en) 2001-11-12
US6762484B2 (en) 2004-07-13

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