KR100573534B1 - 메모리 디바이스 - Google Patents

메모리 디바이스 Download PDF

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Publication number
KR100573534B1
KR100573534B1 KR1019990028147A KR19990028147A KR100573534B1 KR 100573534 B1 KR100573534 B1 KR 100573534B1 KR 1019990028147 A KR1019990028147 A KR 1019990028147A KR 19990028147 A KR19990028147 A KR 19990028147A KR 100573534 B1 KR100573534 B1 KR 100573534B1
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KR
South Korea
Prior art keywords
clock
clock signal
read
signal
supply
Prior art date
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Expired - Fee Related
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KR1019990028147A
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English (en)
Korean (ko)
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KR20000011667A (ko
Inventor
가나자시가즈유키
우치다도시야
오쿠다마사키
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후지쯔 가부시끼가이샤
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Publication of KR20000011667A publication Critical patent/KR20000011667A/ko
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Assigned to 후지쯔 세미컨덕터 가부시키가이샤 reassignment 후지쯔 세미컨덕터 가부시키가이샤 권리의 전부이전등록 Assignors: 후지쯔 가부시끼가이샤
Assigned to 가부시키가이샤 소시오넥스트 reassignment 가부시키가이샤 소시오넥스트 권리의 전부이전등록 Assignors: 후지쯔 세미컨덕터 가부시키가이샤
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/225—Clock input buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1072—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers for memories with random access ports synchronised on clock signal pulse trains, e.g. synchronous memories, self timed memories

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
KR1019990028147A 1998-07-14 1999-07-13 메모리 디바이스 Expired - Fee Related KR100573534B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10198590A JP2000030456A (ja) 1998-07-14 1998-07-14 メモリデバイス
JP98-198590 1998-07-14

Publications (2)

Publication Number Publication Date
KR20000011667A KR20000011667A (ko) 2000-02-25
KR100573534B1 true KR100573534B1 (ko) 2006-04-26

Family

ID=16393729

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990028147A Expired - Fee Related KR100573534B1 (ko) 1998-07-14 1999-07-13 메모리 디바이스

Country Status (3)

Country Link
US (1) US6337833B1 (https=)
JP (1) JP2000030456A (https=)
KR (1) KR100573534B1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001014847A (ja) * 1999-06-30 2001-01-19 Toshiba Corp クロック同期回路
JP3535788B2 (ja) * 1999-12-27 2004-06-07 Ｎｅｃエレクトロニクス株式会社 半導体記憶装置
KR20020014563A (ko) * 2000-08-18 2002-02-25 윤종용 반도체 메모리 장치
JP2002109880A (ja) * 2000-09-28 2002-04-12 Toshiba Corp クロック同期回路
US6898683B2 (en) * 2000-12-19 2005-05-24 Fujitsu Limited Clock synchronized dynamic memory and clock synchronized integrated circuit
JP3552213B2 (ja) * 2001-08-31 2004-08-11 株式会社東芝 Ｓｄメモリカードホストコントローラ及びクロック制御方法
US6981169B2 (en) * 2002-02-26 2005-12-27 Sun Microsystems, Inc. Modified glitch latch for use with power saving dynamic register file structures
JP2003297083A (ja) 2002-03-29 2003-10-17 Mitsubishi Electric Corp 半導体記憶装置
KR100638747B1 (ko) * 2004-12-28 2006-10-30 주식회사 하이닉스반도체 반도체 기억 소자의 클럭 생성 장치 및 방법
KR100744042B1 (ko) * 2005-09-28 2007-07-30 주식회사 하이닉스반도체 반도체메모리소자의 내부 어드레스 생성장치
US7489172B2 (en) * 2005-09-29 2009-02-10 Hynix Semiconductor Inc. DLL driver control circuit
US7609584B2 (en) 2005-11-19 2009-10-27 Samsung Electronics Co., Ltd. Latency control circuit and method thereof and an auto-precharge control circuit and method thereof
US20070291572A1 (en) * 2006-06-20 2007-12-20 Josef Schnell Clock circuit for semiconductor memory
KR100902048B1 (ko) * 2007-05-14 2009-06-15 주식회사 하이닉스반도체 반도체 장치의 어드레스 수신회로
KR20100115613A (ko) * 2009-04-20 2010-10-28 삼성전자주식회사 레이턴시 전류 소모를 줄일 수 있는 반도체 메모리 장치
WO2011056729A2 (en) 2009-11-05 2011-05-12 Rambus Inc. Interface clock management
KR20110052941A (ko) 2009-11-13 2011-05-19 삼성전자주식회사 어디티브 레이턴시를 가지는 반도체 장치
US10437514B2 (en) 2017-10-02 2019-10-08 Micron Technology, Inc. Apparatuses and methods including memory commands for semiconductor memories
US10467158B2 (en) 2017-11-29 2019-11-05 Micron Technology, Inc. Apparatuses and methods including memory commands for semiconductor memories

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051227A (ko) * 1995-12-22 1997-07-29 김광호 반도체 메모리 장치의 데이타 출력버퍼 제어회로
KR980004976A (ko) * 1996-06-07 1998-03-30 김광호 반도체 메모리 장치의 클럭 발생 제어기 및 클럭 발생 제어 방법
JPH10208470A (ja) * 1997-01-17 1998-08-07 Nec Corp 同期型半導体記憶装置
KR19980073725A (ko) * 1997-03-18 1998-11-05 윤종용 독출 동작시 소모되는 전류를 줄이기 위한 반도체 메모리 장치와 이의 데이터 독출방법
KR19980079350A (ko) * 1997-04-03 1998-11-25 세키자와다다시 전력 소비를 최소화한 동기 ｄｒａｍ
KR19980078944A (ko) * 1997-04-30 1998-11-25 문정환 메모리의 데이터 출력버퍼

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0142968B1 (ko) * 1995-06-30 1998-08-17 김광호 반도체 메모리 장치의 클럭 발생 장치
JP3759645B2 (ja) * 1995-12-25 2006-03-29 三菱電機株式会社 同期型半導体記憶装置
JP3183184B2 (ja) * 1996-08-09 2001-07-03 日本電気株式会社 クロック同期型半導体記憶装置
EP0929075B1 (en) * 1996-09-26 2003-08-20 Mitsubishi Denki Kabushiki Kaisha Synchronous type semiconductor memory device
US5923611A (en) * 1996-12-20 1999-07-13 Micron Technology, Inc. Memory having a plurality of external clock signal inputs

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970051227A (ko) * 1995-12-22 1997-07-29 김광호 반도체 메모리 장치의 데이타 출력버퍼 제어회로
KR980004976A (ko) * 1996-06-07 1998-03-30 김광호 반도체 메모리 장치의 클럭 발생 제어기 및 클럭 발생 제어 방법
JPH10208470A (ja) * 1997-01-17 1998-08-07 Nec Corp 同期型半導体記憶装置
KR19980073725A (ko) * 1997-03-18 1998-11-05 윤종용 독출 동작시 소모되는 전류를 줄이기 위한 반도체 메모리 장치와 이의 데이터 독출방법
KR19980079350A (ko) * 1997-04-03 1998-11-25 세키자와다다시 전력 소비를 최소화한 동기 ｄｒａｍ
KR19980078944A (ko) * 1997-04-30 1998-11-25 문정환 메모리의 데이터 출력버퍼

Also Published As

Publication number Publication date
JP2000030456A (ja) 2000-01-28
KR20000011667A (ko) 2000-02-25
US6337833B1 (en) 2002-01-08

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