KR100569641B1 - 원자외선 노광용 포지티브 포토레지스트 조성물 - Google Patents

원자외선 노광용 포지티브 포토레지스트 조성물 Download PDF

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Publication number
KR100569641B1
KR100569641B1 KR1019990026473A KR19990026473A KR100569641B1 KR 100569641 B1 KR100569641 B1 KR 100569641B1 KR 1019990026473 A KR1019990026473 A KR 1019990026473A KR 19990026473 A KR19990026473 A KR 19990026473A KR 100569641 B1 KR100569641 B1 KR 100569641B1
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KR
South Korea
Prior art keywords
group
acid
alkyl
same
photoresist composition
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Expired - Lifetime
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KR1019990026473A
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English (en)
Korean (ko)
Other versions
KR20000011431A (ko
Inventor
사토켄이치로오
Original Assignee
후지 샤신 필름 가부시기가이샤
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Paints Or Removers (AREA)
KR1019990026473A 1998-07-02 1999-07-02 원자외선 노광용 포지티브 포토레지스트 조성물 Expired - Lifetime KR100569641B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP98-187597 1998-07-02
JP18759798A JP3844322B2 (ja) 1998-07-02 1998-07-02 遠紫外線露光用ポジ型フォトレジスト組成物

Publications (2)

Publication Number Publication Date
KR20000011431A KR20000011431A (ko) 2000-02-25
KR100569641B1 true KR100569641B1 (ko) 2006-04-11

Family

ID=16208904

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990026473A Expired - Lifetime KR100569641B1 (ko) 1998-07-02 1999-07-02 원자외선 노광용 포지티브 포토레지스트 조성물

Country Status (3)

Country Link
US (1) US6303265B1 (OSRAM)
JP (1) JP3844322B2 (OSRAM)
KR (1) KR100569641B1 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010054851A (ko) * 1999-12-08 2001-07-02 윤종용 지환식 감광성 폴리머 및 이를 포함하는 레지스트조성물과 그 제조방법
JP4166402B2 (ja) * 2000-02-28 2008-10-15 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
JP4414069B2 (ja) * 2000-07-11 2010-02-10 ダイセル化学工業株式会社 フォトレジスト用高分子化合物の製造方法、及びフォトレジスト組成物の製造方法
JP2002049157A (ja) * 2000-08-03 2002-02-15 Nec Corp ポジ型化学増幅レジスト及びそのパターン形成方法
US6677419B1 (en) 2002-11-13 2004-01-13 International Business Machines Corporation Preparation of copolymers
TWI344966B (en) 2003-03-10 2011-07-11 Maruzen Petrochem Co Ltd Novel thiol compound, copolymer and method for producing the copolymer
JP4693149B2 (ja) * 2004-04-12 2011-06-01 三菱レイヨン株式会社 レジスト用重合体
JP4513501B2 (ja) * 2004-10-27 2010-07-28 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4911456B2 (ja) * 2006-11-21 2012-04-04 富士フイルム株式会社 ポジ型感光性組成物、該ポジ型感光性組成物に用いられる高分子化合物、該高分子化合物の製造方法及びポジ型感光性組成物を用いたパターン形成方法
JP5162290B2 (ja) * 2007-03-23 2013-03-13 富士フイルム株式会社 レジスト組成物及びそれを用いたパターン形成方法
US20180289821A1 (en) * 2011-08-03 2018-10-11 Anp Technologies, Inc. Oxazoline Polymer Compositions and Use Thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5580694A (en) * 1994-06-27 1996-12-03 International Business Machines Corporation Photoresist composition with androstane and process for its use
KR100206664B1 (ko) * 1995-06-28 1999-07-01 세키사와 다다시 화학증폭형 레지스트 조성물 및 레지스트 패턴의 형성방법
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
JP3700276B2 (ja) 1996-08-09 2005-09-28 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP3297324B2 (ja) * 1996-10-30 2002-07-02 富士通株式会社 レジスト組成物、レジストパターンの形成方法及び半導体装置の製造方法
JP3890357B2 (ja) * 1997-02-07 2007-03-07 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
US6042991A (en) * 1997-02-18 2000-03-28 Fuji Photo Film Co., Ltd. Positive working photosensitive composition
EP0878738B1 (en) * 1997-05-12 2002-01-09 Fuji Photo Film Co., Ltd. Positive resist composition
JPH1152575A (ja) * 1997-08-04 1999-02-26 Sumitomo Chem Co Ltd 化学増幅型ポジ型フォトレジスト組成物
JP3847454B2 (ja) * 1998-03-20 2006-11-22 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法

Also Published As

Publication number Publication date
JP2000019737A (ja) 2000-01-21
US6303265B1 (en) 2001-10-16
JP3844322B2 (ja) 2006-11-08
KR20000011431A (ko) 2000-02-25

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