KR100563969B1 - 선택적 플라즈마 식각방법 - Google Patents

선택적 플라즈마 식각방법 Download PDF

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Publication number
KR100563969B1
KR100563969B1 KR1020007002106A KR20007002106A KR100563969B1 KR 100563969 B1 KR100563969 B1 KR 100563969B1 KR 1020007002106 A KR1020007002106 A KR 1020007002106A KR 20007002106 A KR20007002106 A KR 20007002106A KR 100563969 B1 KR100563969 B1 KR 100563969B1
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South Korea
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layer
gas
dielectric layer
flow rate
processing chamber
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Korean (ko)
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KR20010023462A (ko
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헬렌 에이치. 즈후
조지 에이. 무엘러
토마스 디. 엔구옌
루민 리
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020007002106A 1997-08-28 1998-08-25 선택적 플라즈마 식각방법 Expired - Fee Related KR100563969B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/919,659 1997-08-28
US08/919,659 US6090304A (en) 1997-08-28 1997-08-28 Methods for selective plasma etch
PCT/US1998/017607 WO1999010923A1 (en) 1997-08-28 1998-08-25 Method for selective plasma etch

Publications (2)

Publication Number Publication Date
KR20010023462A KR20010023462A (ko) 2001-03-26
KR100563969B1 true KR100563969B1 (ko) 2006-03-29

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KR1020007002106A Expired - Fee Related KR100563969B1 (ko) 1997-08-28 1998-08-25 선택적 플라즈마 식각방법

Country Status (6)

Country Link
US (1) US6090304A (enExample)
EP (1) EP1012877A1 (enExample)
JP (1) JP2001514447A (enExample)
KR (1) KR100563969B1 (enExample)
TW (1) TW538479B (enExample)
WO (1) WO1999010923A1 (enExample)

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US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
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Also Published As

Publication number Publication date
KR20010023462A (ko) 2001-03-26
US6090304A (en) 2000-07-18
TW538479B (en) 2003-06-21
EP1012877A1 (en) 2000-06-28
WO1999010923A1 (en) 1999-03-04
WO1999010923B1 (en) 1999-05-14
JP2001514447A (ja) 2001-09-11

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