TW538479B - Methods and apparatus for selective plasma etch - Google Patents

Methods and apparatus for selective plasma etch Download PDF

Info

Publication number
TW538479B
TW538479B TW087112650A TW87112650A TW538479B TW 538479 B TW538479 B TW 538479B TW 087112650 A TW087112650 A TW 087112650A TW 87112650 A TW87112650 A TW 87112650A TW 538479 B TW538479 B TW 538479B
Authority
TW
Taiwan
Prior art keywords
layer
dielectric layer
gas
selectivity
patent application
Prior art date
Application number
TW087112650A
Other languages
English (en)
Chinese (zh)
Inventor
Helen H Zhu
George A Mueller
Thomas D Nguyen
Lumin Li
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of TW538479B publication Critical patent/TW538479B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
TW087112650A 1997-08-28 1998-07-31 Methods and apparatus for selective plasma etch TW538479B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/919,659 US6090304A (en) 1997-08-28 1997-08-28 Methods for selective plasma etch

Publications (1)

Publication Number Publication Date
TW538479B true TW538479B (en) 2003-06-21

Family

ID=25442429

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112650A TW538479B (en) 1997-08-28 1998-07-31 Methods and apparatus for selective plasma etch

Country Status (6)

Country Link
US (1) US6090304A (enExample)
EP (1) EP1012877A1 (enExample)
JP (1) JP2001514447A (enExample)
KR (1) KR100563969B1 (enExample)
TW (1) TW538479B (enExample)
WO (1) WO1999010923A1 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6423646B1 (en) * 1998-06-04 2002-07-23 Vanguard International Semiconductor Corporation Method for removing etch-induced polymer film and damaged silicon layer from a silicon surface
JP3241020B2 (ja) * 1999-03-26 2001-12-25 日本電気株式会社 半導体装置の製造方法
JP2002270586A (ja) * 2001-03-08 2002-09-20 Tokyo Electron Ltd 有機系絶縁膜のエッチング方法およびデュアルダマシンプロセス
US7311852B2 (en) * 2001-03-30 2007-12-25 Lam Research Corporation Method of plasma etching low-k dielectric materials
US6670278B2 (en) 2001-03-30 2003-12-30 Lam Research Corporation Method of plasma etching of silicon carbide
US6962879B2 (en) * 2001-03-30 2005-11-08 Lam Research Corporation Method of plasma etching silicon nitride
US7084070B1 (en) 2001-03-30 2006-08-01 Lam Research Corporation Treatment for corrosion in substrate processing
US20020177321A1 (en) * 2001-03-30 2002-11-28 Li Si Yi Plasma etching of silicon carbide
US6617257B2 (en) 2001-03-30 2003-09-09 Lam Research Corporation Method of plasma etching organic antireflective coating
US6630407B2 (en) 2001-03-30 2003-10-07 Lam Research Corporation Plasma etching of organic antireflective coating
JP2002319551A (ja) * 2001-04-23 2002-10-31 Nec Corp 半導体装置およびその製造方法
US6746961B2 (en) 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
TW567554B (en) * 2001-08-08 2003-12-21 Lam Res Corp All dual damascene oxide etch process steps in one confined plasma chamber
US6686293B2 (en) 2002-05-10 2004-02-03 Applied Materials, Inc Method of etching a trench in a silicon-containing dielectric material
KR20030096832A (ko) * 2002-06-18 2003-12-31 동부전자 주식회사 반도체 소자의 절연막 식각 방법
US7541270B2 (en) * 2002-08-13 2009-06-02 Micron Technology, Inc. Methods for forming openings in doped silicon dioxide
US6838012B2 (en) 2002-10-31 2005-01-04 Lam Research Corporation Methods for etching dielectric materials
US20040118344A1 (en) * 2002-12-20 2004-06-24 Lam Research Corporation System and method for controlling plasma with an adjustable coupling to ground circuit
US7098141B1 (en) 2003-03-03 2006-08-29 Lam Research Corporation Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures
JP2004296835A (ja) * 2003-03-27 2004-10-21 Applied Materials Inc ダマシン構造を形成する方法
US6949460B2 (en) * 2003-11-12 2005-09-27 Lam Research Corporation Line edge roughness reduction for trench etch
US7521362B2 (en) * 2003-12-23 2009-04-21 Lam Research Corporation Methods for the optimization of ion energy control in a plasma processing system
US7517801B1 (en) 2003-12-23 2009-04-14 Lam Research Corporation Method for selectivity control in a plasma processing system
US20050153563A1 (en) * 2004-01-14 2005-07-14 Lam Research Corporation Selective etch of films with high dielectric constant
US8222155B2 (en) * 2004-06-29 2012-07-17 Lam Research Corporation Selectivity control in a plasma processing system
US20060043066A1 (en) * 2004-08-26 2006-03-02 Kamp Thomas A Processes for pre-tapering silicon or silicon-germanium prior to etching shallow trenches
US7244311B2 (en) * 2004-10-13 2007-07-17 Lam Research Corporation Heat transfer system for improved semiconductor processing uniformity
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US7430986B2 (en) * 2005-03-18 2008-10-07 Lam Research Corporation Plasma confinement ring assemblies having reduced polymer deposition characteristics
JP4979576B2 (ja) * 2005-03-30 2012-07-18 パナソニック株式会社 プラズマドーピング方法及びプラズマ処理装置
US7713379B2 (en) 2005-06-20 2010-05-11 Lam Research Corporation Plasma confinement rings including RF absorbing material for reducing polymer deposition
US20070032081A1 (en) * 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US8263498B2 (en) * 2006-03-28 2012-09-11 Tokyo Electron Limited Semiconductor device fabricating method, plasma processing system and storage medium
US8635971B2 (en) * 2006-03-31 2014-01-28 Lam Research Corporation Tunable uniformity in a plasma processing system
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US7517804B2 (en) * 2006-08-31 2009-04-14 Micron Technologies, Inc. Selective etch chemistries for forming high aspect ratio features and associated structures
US8313612B2 (en) 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
DE202010015933U1 (de) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US8249900B2 (en) * 2010-02-10 2012-08-21 Morgan Stanley & Co. Llc System and method for termination of pension plan through mutual annuitization
US9171702B2 (en) 2010-06-30 2015-10-27 Lam Research Corporation Consumable isolation ring for movable substrate support assembly of a plasma processing chamber
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
US8826855B2 (en) 2010-06-30 2014-09-09 Lam Research Corporation C-shaped confinement ring for a plasma processing chamber
US9728429B2 (en) 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
US9869392B2 (en) 2011-10-20 2018-01-16 Lam Research Corporation Edge seal for lower electrode assembly
US9859142B2 (en) 2011-10-20 2018-01-02 Lam Research Corporation Edge seal for lower electrode assembly
US8844106B2 (en) 2011-11-10 2014-09-30 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
US8677586B2 (en) 2012-04-04 2014-03-25 Lam Research Corporation Installation fixture for elastomer bands and methods of using the same
DE102012106518A1 (de) * 2012-07-18 2014-01-23 H2 Solar Gmbh Beschichtung von Substraten mit Siliciden und deren Oxide
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
US9502279B2 (en) 2013-06-28 2016-11-22 Lam Research Corporation Installation fixture having a micro-grooved non-stick surface
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
US9583377B2 (en) 2013-12-17 2017-02-28 Lam Research Corporation Installation fixture for elastomer bands
US10090211B2 (en) 2013-12-26 2018-10-02 Lam Research Corporation Edge seal for lower electrode assembly
JP6920309B2 (ja) 2016-01-13 2021-08-18 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エッチングハードウェアに対する水素プラズマベース洗浄処理
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
WO2021217056A1 (en) * 2020-04-23 2021-10-28 Akash Systems, Inc. High-efficiency structures for improved wireless communications

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125979A (en) * 1978-03-24 1979-09-29 Hitachi Ltd Manufacture of semiconductor device
US4267012A (en) * 1979-04-30 1981-05-12 Fairchild Camera & Instrument Corp. Process for patterning metal connections on a semiconductor structure by using a tungsten-titanium etch resistant layer
JPS56111222A (en) * 1980-01-31 1981-09-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method on silicon nitride film
JPS5860611A (ja) * 1981-10-06 1983-04-11 Canon Inc 非晶質水素化シリコンのドライエツチング方法
US4412885A (en) * 1982-11-03 1983-11-01 Applied Materials, Inc. Materials and methods for plasma etching of aluminum and aluminum alloys
US4740485A (en) * 1986-07-22 1988-04-26 Monolithic Memories, Inc. Method for forming a fuse
JPS63230889A (ja) * 1987-03-20 1988-09-27 Toshiba Corp 基板の製造方法
US4878994A (en) * 1987-07-16 1989-11-07 Texas Instruments Incorporated Method for etching titanium nitride local interconnects
JPH01214025A (ja) * 1988-02-22 1989-08-28 Nec Yamagata Ltd 半導体装置の製造方法
DE3842758A1 (de) * 1988-12-19 1990-06-21 Siemens Ag Verfahren zum aetzen einer dreilagigen verdrahtungsebene bei der herstellung integrierter halbleiterschaltungen
JP2528962B2 (ja) * 1989-02-27 1996-08-28 株式会社日立製作所 試料処理方法及び装置
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US4980018A (en) * 1989-11-14 1990-12-25 Intel Corporation Plasma etching process for refractory metal vias
EP0489407A3 (en) * 1990-12-03 1992-07-22 Applied Materials, Inc. Plasma reactor using uhf/vhf resonant antenna source, and processes
US5217570A (en) * 1991-01-31 1993-06-08 Sony Corporation Dry etching method
US5269879A (en) * 1991-10-16 1993-12-14 Lam Research Corporation Method of etching vias without sputtering of underlying electrically conductive layer
US5296094A (en) * 1992-06-12 1994-03-22 Intel Corporation Process for etching silicon dioxide layer without micro masking effect
DE69320963T2 (de) * 1992-06-22 1999-05-12 Lam Research Corp., Fremont, Calif. Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
US5256245A (en) * 1992-08-11 1993-10-26 Micron Semiconductor, Inc. Use of a clean up step to form more vertical profiles of polycrystalline silicon sidewalls during the manufacture of a semiconductor device
US5326427A (en) * 1992-09-11 1994-07-05 Lsi Logic Corporation Method of selectively etching titanium-containing materials on a semiconductor wafer using remote plasma generation
US5468339A (en) * 1992-10-09 1995-11-21 Advanced Micro Devices, Inc. Plasma etch process
JPH06151382A (ja) * 1992-11-11 1994-05-31 Toshiba Corp ドライエッチング方法
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
US5770098A (en) * 1993-03-19 1998-06-23 Tokyo Electron Kabushiki Kaisha Etching process
US5384009A (en) * 1993-06-16 1995-01-24 Applied Materials, Inc. Plasma etching using xenon
JPH0774156A (ja) * 1993-08-31 1995-03-17 Nec Corp 半導体装置の製造方法
US5505816A (en) * 1993-12-16 1996-04-09 International Business Machines Corporation Etching of silicon dioxide selectively to silicon nitride and polysilicon
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
JP2809087B2 (ja) * 1994-02-15 1998-10-08 日本電気株式会社 配線形成方法
US5562801A (en) * 1994-04-28 1996-10-08 Cypress Semiconductor Corporation Method of etching an oxide layer
US5620615A (en) * 1994-05-13 1997-04-15 Micron Technology, Inc. Method of etching or removing W and WSix films
US5496762A (en) * 1994-06-02 1996-03-05 Micron Semiconductor, Inc. Highly resistive structures for integrated circuits and method of manufacturing the same
US5514247A (en) * 1994-07-08 1996-05-07 Applied Materials, Inc. Process for plasma etching of vias
US5935877A (en) * 1995-09-01 1999-08-10 Applied Materials, Inc. Etch process for forming contacts over titanium silicide
US5910453A (en) * 1996-01-16 1999-06-08 Advanced Micro Devices, Inc. Deep UV anti-reflection coating etch
US6004884A (en) * 1996-02-15 1999-12-21 Lam Research Corporation Methods and apparatus for etching semiconductor wafers
US5843847A (en) * 1996-04-29 1998-12-01 Applied Materials, Inc. Method for etching dielectric layers with high selectivity and low microloading
US5719089A (en) * 1996-06-21 1998-02-17 Vanguard International Semiconductor Corporation Method for etching polymer-assisted reduced small contacts for ultra large scale integration semiconductor devices
US5668038A (en) * 1996-10-09 1997-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. One step smooth cylinder surface formation process in stacked cylindrical DRAM products
JPH10125654A (ja) * 1996-10-21 1998-05-15 Sharp Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
KR20010023462A (ko) 2001-03-26
US6090304A (en) 2000-07-18
EP1012877A1 (en) 2000-06-28
WO1999010923A1 (en) 1999-03-04
WO1999010923B1 (en) 1999-05-14
KR100563969B1 (ko) 2006-03-29
JP2001514447A (ja) 2001-09-11

Similar Documents

Publication Publication Date Title
TW538479B (en) Methods and apparatus for selective plasma etch
TW546737B (en) Method of plasma etching organic antireflective coating
TW546722B (en) Method of plasma etching low-k dielectric materials
US6083844A (en) Techniques for etching an oxide layer
US7166535B2 (en) Plasma etching of silicon carbide
US5935877A (en) Etch process for forming contacts over titanium silicide
US7265060B2 (en) Bi-level resist structure and fabrication method for contact holes on semiconductor substrates
KR101476435B1 (ko) 다중-레이어 레지스트 플라즈마 에치 방법
JP2013030778A (ja) 二層レジストプラズマエッチングの方法
TW200823998A (en) Self-aligned contact etch with high sensitivity to nitride shoulder
JPH03291921A (ja) 集積回路製作方法
TW589403B (en) Mechanism for bow reduction and critical dimension control in etching silicon dioxide using hydrogen-containing additive gases in fluorocarbon gas chemistry
TW399240B (en) Self-aligned contacts for semiconductor device
KR101276043B1 (ko) 아산화질소를 사용하는 에치백 프로세스
TW502334B (en) High aspect ratio sub-micron contact etch process in an inductively-coupled plasma processing system
KR100669560B1 (ko) 반도체 소자의 도전 배선 형성 방법
US6869885B1 (en) Method for a tungsten silicide etch
CN100358106C (zh) 一种制造半导体器件的方法
TW478064B (en) Method of plasma etching a polysilicon layer through a patterned SiO2 layer
KR20250137674A (ko) 반도체 디바이스들 상에서 마이크로 및 매크로 스캘럽핑을 감소시키기 위한 방법들
JPH1167731A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees