KR100562213B1 - 반도체제조시블랙실리콘형성을감소시키는방법 - Google Patents

반도체제조시블랙실리콘형성을감소시키는방법 Download PDF

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Publication number
KR100562213B1
KR100562213B1 KR1019980059707A KR19980059707A KR100562213B1 KR 100562213 B1 KR100562213 B1 KR 100562213B1 KR 1019980059707 A KR1019980059707 A KR 1019980059707A KR 19980059707 A KR19980059707 A KR 19980059707A KR 100562213 B1 KR100562213 B1 KR 100562213B1
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South Korea
Prior art keywords
wafer
black silicon
pad
layer
pad stack
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Expired - Fee Related
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KR1019980059707A
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English (en)
Korean (ko)
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KR19990063530A (ko
Inventor
덩-칭 펀그
Original Assignee
지멘스 악티엔게젤샤프트
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
    • H10P14/6524—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen
    • H10P14/6526—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being nitrogen introduced into an oxide material, e.g. changing SiO to SiON
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)
KR1019980059707A 1997-12-29 1998-12-28 반도체제조시블랙실리콘형성을감소시키는방법 Expired - Fee Related KR100562213B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/998,858 US6033997A (en) 1997-12-29 1997-12-29 Reduction of black silicon in semiconductor fabrication
US8/998,858 1997-12-29
US08/998,858 1997-12-29

Publications (2)

Publication Number Publication Date
KR19990063530A KR19990063530A (ko) 1999-07-26
KR100562213B1 true KR100562213B1 (ko) 2006-05-25

Family

ID=25545626

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980059707A Expired - Fee Related KR100562213B1 (ko) 1997-12-29 1998-12-28 반도체제조시블랙실리콘형성을감소시키는방법

Country Status (6)

Country Link
US (1) US6033997A (https=)
EP (1) EP0928018A3 (https=)
JP (1) JPH11260808A (https=)
KR (1) KR100562213B1 (https=)
CN (1) CN1147924C (https=)
TW (1) TW396504B (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6190955B1 (en) * 1998-01-27 2001-02-20 International Business Machines Corporation Fabrication of trench capacitors using disposable hard mask
DE19803186C1 (de) * 1998-01-28 1999-06-17 Bosch Gmbh Robert Verfahren zur Herstellung strukturierter Wafer
DE19944012B4 (de) 1999-09-14 2007-07-19 Infineon Technologies Ag Grabenkondensator mit Kondensatorelektroden und entsprechendes Herstellungsverfahren
US6482749B1 (en) * 2000-08-10 2002-11-19 Seh America, Inc. Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid
US6821900B2 (en) 2001-01-09 2004-11-23 Infineon Technologies Ag Method for dry etching deep trenches in a substrate
TW488017B (en) * 2001-04-20 2002-05-21 Nanya Technology Corp Semiconductor manufacture method of black silicon removal
US6806200B2 (en) * 2002-11-08 2004-10-19 International Business Machines Corporation Method of improving etch uniformity in deep silicon etching
US6927172B2 (en) * 2003-02-24 2005-08-09 International Business Machines Corporation Process to suppress lithography at a wafer edge
US20050014364A1 (en) * 2003-07-18 2005-01-20 Infineon Technologies North America Corp. Method of suppressing the effect of shining spots present at the edge of a wafer
DE102004012280B4 (de) 2004-03-12 2005-12-29 Infineon Technologies Ag Verfahren zur Herstellung einer Halbleiterstruktur
DE102004017747A1 (de) * 2004-04-06 2006-01-05 Infineon Technologies Ag Verfahren zur Herstellung von Halbleiterbauelementen und ein strukturiertes Substrat
US7226869B2 (en) * 2004-10-29 2007-06-05 Lam Research Corporation Methods for protecting silicon or silicon carbide electrode surfaces from morphological modification during plasma etch processing
US7291286B2 (en) * 2004-12-23 2007-11-06 Lam Research Corporation Methods for removing black silicon and black silicon carbide from surfaces of silicon and silicon carbide electrodes for plasma processing apparatuses
US20060261436A1 (en) * 2005-05-19 2006-11-23 Freescale Semiconductor, Inc. Electronic device including a trench field isolation region and a process for forming the same
US7491622B2 (en) * 2006-04-24 2009-02-17 Freescale Semiconductor, Inc. Process of forming an electronic device including a layer formed using an inductively coupled plasma
US20070249127A1 (en) * 2006-04-24 2007-10-25 Freescale Semiconductor, Inc. Electronic device including a semiconductor layer and a sidewall spacer and a process of forming the same
US7670895B2 (en) 2006-04-24 2010-03-02 Freescale Semiconductor, Inc Process of forming an electronic device including a semiconductor layer and another layer adjacent to an opening within the semiconductor layer
US7528078B2 (en) 2006-05-12 2009-05-05 Freescale Semiconductor, Inc. Process of forming electronic device including a densified nitride layer adjacent to an opening within a semiconductor layer
US20080289651A1 (en) * 2007-05-25 2008-11-27 International Business Machines Corporation Method and apparatus for wafer edge cleaning

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07115083A (ja) * 1993-10-14 1995-05-02 Sony Corp シリコン酸化膜に対するエッチング方法
JP2645478B2 (ja) * 1988-10-07 1997-08-25 富士通株式会社 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214526A (ja) * 1985-03-20 1986-09-24 Toshiba Corp 半導体装置の製造方法
US5072266A (en) * 1988-12-27 1991-12-10 Siliconix Incorporated Trench DMOS power transistor with field-shaping body profile and three-dimensional geometry
US5256594A (en) * 1989-06-16 1993-10-26 Intel Corporation Masking technique for depositing gallium arsenide on silicon
FR2672731A1 (fr) * 1991-02-07 1992-08-14 France Telecom Procede d'oxydation localisee enterree d'un substrat de silicium et circuit integre correspondant.

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2645478B2 (ja) * 1988-10-07 1997-08-25 富士通株式会社 半導体装置の製造方法
JPH07115083A (ja) * 1993-10-14 1995-05-02 Sony Corp シリコン酸化膜に対するエッチング方法

Also Published As

Publication number Publication date
CN1221977A (zh) 1999-07-07
KR19990063530A (ko) 1999-07-26
EP0928018A3 (en) 2000-06-14
CN1147924C (zh) 2004-04-28
TW396504B (en) 2000-07-01
EP0928018A2 (en) 1999-07-07
US6033997A (en) 2000-03-07
JPH11260808A (ja) 1999-09-24

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