CN1221977A - 在半导体器件的制造中减少黑硅的方法 - Google Patents

在半导体器件的制造中减少黑硅的方法 Download PDF

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CN1221977A
CN1221977A CN98123097A CN98123097A CN1221977A CN 1221977 A CN1221977 A CN 1221977A CN 98123097 A CN98123097 A CN 98123097A CN 98123097 A CN98123097 A CN 98123097A CN 1221977 A CN1221977 A CN 1221977A
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彭杜清
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Abstract

在形成硬腐蚀掩模之前,通过在至少晶片的圆周区内形成介质层来减少黑硅的形成。

Description

在半导体器件的制造中 减少黑硅的方法
本发明一般涉及半导体的制造，特别涉及减少黑硅形成的方法。
在集成电路(IC)或芯片的制造中，通常用于不同目的，在衬底例如硅晶片内形成通孔或沟槽。通过腐蚀在衬底内形成通孔或沟槽。例如深槽(DT)可以用作存储单元的沟槽电容器。
通常，通过首先在晶片的表面上提供基层叠层形成DT。基层叠层包括例如基层氧化物和基层氮化物的顺序层。以上基层叠层为包括如TEOS等的硬掩模层。硬掩模层起形成DT的硬腐蚀掩模的作用。
光刻胶层淀积在硬掩模上并构图，以选择性地露出阵列区域内要形成DT的区域。一般地，通过反应离子腐蚀(RIE)除去硬掩模的露出区域以及下面的基层叠层，露出晶片。除去光刻胶，通过RIE腐蚀露出的晶片区域产生DT。
形成硬掩模层的常规技术造成晶片上硬掩模材料的不均匀覆盖。特别是，覆盖晶片边缘和侧面的材料比其它区域的材料少。由此，在DT腐蚀的后续步骤期间，在边缘和侧面的硬掩模被腐蚀掉，露出下面的基层叠层。这样依次又使基层叠层被腐蚀掉，露出下面的晶片表面。随着DT腐蚀的继续，在晶片露出区域形成针孔型表面。这种针孔型表面称作“黑硅”。对黑硅的说明可以在例如V.W.Hess,Solid State Technology 1981年四月第192页和G.K.Herb,Solid State Technology 1989年十月第104页中找到，在这里引入仅作参考。
形成黑硅是由于在DT腐蚀期间氧化物岛留在晶片表面。氧化物保护下面的硅不受腐蚀。由此，未被氧化物保护的部分继续被腐蚀，同时留下保护的部分。随着RIE的继续，保护部分最终造成形成针孔或尖峰。
在RIE期间形成的黑硅增加了晶片的处理难度。例如，黑硅尖峰很容易断裂，并负面影响制造成品率。
防止形成黑硅的一种常规技术是使用夹紧环覆盖晶片边缘，在硬掩模进行RIE期间进行保护。然而，使用夹紧环掩蔽了夹紧销，影响了光刻清晰度或可靠性以及腐蚀的均匀性。由此降低了芯片成品率。此外，使用夹紧环阻碍了使用在高密度等离子体腐蚀装置中需要的静电吸盘(ESC)装配的装置。
从以上的介绍可知，需要提供一种制造半导体器件的改进技术，不会形成黑硅。
本发明涉及在半导体器件的制造期间减少黑硅的方法。在一个实施例中，通过从至少晶片的圆周和侧面除去基层叠层并在其中形成介质层来减少黑硅的形成。介质层例如包括热氧化形成的氧化物。然后在晶片表面上形成硬掩模。晶片的至少圆周区和侧面内的介质层在DT腐蚀期间提供了额外的保护，减少或防止了形成黑硅。
图1示出了DRAM单元；以及
图2A-E示出了本发明在集成电路的制造期间防止形成黑硅的一个实施例。
本发明涉及在集成电路(IC)的制造期间防止黑硅的方法。IC包括如随机存取存储器(RAM)、动态RAM(DRAM)、同步DRAM(SDRAM)、静态RAM(SRAM)、或只读存储器(ROM)等的存储电路。此外，IC可以包括逻辑器件，例如可编程逻辑阵列(PLA)、专用IC(ASIC)、组合DRAM逻辑IC(嵌入式DRAM)、或任何其它电路器件。
通常，大量的IC平行地制备在如硅晶片的衬底上。处理后，切割晶片以便将IC分离为多个单独的芯片。然后将芯片封装成最终的产品，用于如计算机系统、蜂窝式电话、个人数字化助理(PDA)等的用户产品和其它产品中。
为便于讨论，提供了常规DRAM单元的说明。参考图1，显示出了沟槽电容器DRAM单元。这种DRAM单元介绍在例如Nesbit等人的A0.6μm2256Mb DRAM Cell With Self-Aligned Buried Strap(BEST),IEDM93-627，在这里引入仅作参考。
如图所示，DRAM单元包括形成在衬底101内的沟槽电容器160。沟槽内通常填充有由n型掺杂剂重掺杂的多晶硅(poly)161。poly起电容器的电极的作用，称作“存储节点”。可选地，由n型掺杂剂掺杂的掩埋极板165环绕在沟槽的下部。掩埋极板起电容器的第二电极的作用。在沟槽的上部是用于减少寄生漏电流的轴环168。节点介质163将电容器的两个极板分离。提供包括n型掺杂剂的掩埋阱170，连接阵列中DRAM单元的掩埋极板。以上的掩埋阱为p阱173。p阱减少了垂直漏电流。
DRAM单元也包括晶体管110。晶体管包括栅112和包含n型掺杂剂的扩散区113和114。扩散区称作源和漏区。源和漏区的标识取决于晶体管的工作。通过扩散区125获得晶体管与电容器的连接，称作“节点扩散”。也称作“字线”的栅通常包括poly366和氮化层368。此外，层366为在poly层上包括硅化物，例如poly层上的硅化钼(MoSix)、硅化钽(TaSix)、硅化钛(TiSix)、硅化钨(WSix)或硅化钴(CoSix)的多晶硅化物层，以减少字线的电阻。
在一个实施例中，多晶硅化物层包括poly上的WSix。线形氮化物369覆盖栅叠层和衬底。氮化层368和线形氮化物起随后处理的腐蚀或抛光终止层的作用。
提供浅沟槽隔离(STI)180，将DRAM单元与其它单元或器件隔离。如图所示，字线120形成在沟槽上并通过STI由此隔离。字线120称作“贯通字线”。这种构形称作折叠位线结构。也可以使用如开口或开口一折叠位线结构或单元设计等的其它构形。
层间介质层189形成在字线上。代表位线的导电层形成在层间介质层上。在层间介质层内形成位线接触开口186，使源区113与位线190接触。
在阵列中形成多个这种单元。通过字线和位线互连单元的阵列。通过激活单元的对应字线和位线访问单元。
参考图2A，示出了集成电路形成其上的衬底201。衬底可以为例如硅晶片。也可以使用其它类型的衬底，例如绝缘体上硅(SOI)、蓝宝石上硅(SOS)、锗、砷化镓或Ⅲ-Ⅴ化合物族。
如图所示，在晶片上形成基层叠层210。基层叠层保形地覆盖包括侧面和底部的晶片表面。基层叠层通常包括基层氧化层和基层终止层。通过如低压化学汽相淀积(LPCVD)或如热氧化等的其它已知技术淀积基层氧化层。基层氧化物足够厚以减少应力并促进基层终止层与晶片之间的粘性。通常基层氧化层的厚度约5-20nm，优选约10nm。
在基层氧化物上是基层终止层。基层终止层包括对如填充DT的其它材料具有足够选择性的材料，以起有效的腐蚀或CMP终止层的作用。在一个实施例中，基层终止层包括氮化硅(Si3N4)，是由于相对于填充沟槽的多晶硅它具有较低的腐蚀速率。其它合适的腐蚀或CMP终止材料也可以用于形成基层终止层。通过例如低压化学汽相淀积(LPCVD)淀积氮化层。也可以使用如等离子体增强化学汽相淀积(PECVD)等的其它技术淀积氮化层。通常，基层氮化层约100-300nm，优选约200-220nm。然而，根据应用和CMP性能或腐蚀效率以及氮化物和构图氮化物使用的光刻胶之间的腐蚀选择性厚度不同。
虽然如以上介绍的基层叠层包括基层氧化物和基层终止层，但根据应用可以包括额外的层。
在一个实施例中，构图基层叠层以便在至少要形成IC的晶片区域内保护晶片上表面。这里使用的术语“原始芯片区”是指要形成IC的晶片区域。通常将基层叠层构图延伸超出晶片上表面的原始芯片区。一般地，构图基层叠层以保护晶片的上表面，距未保护的边缘、侧面和底部留下约3mm宽的区域。在晶片边缘的区域通常称作“圆周”区。上表面上圆周区的宽度可以根据晶片上具体的设计和芯片的布局改变。
在一个实施例中，通过在晶片上淀积掩模层220覆盖基层叠层获得基层叠层的构图，如图所示2B。掩模层包括如通过旋涂技术淀积的光刻胶。使用常规技术的背面清洗和消除圆周从底部、侧面和圆周区除去光刻胶。由此，除了圆周区240，块掩模220留下来保护晶片上表面上的基层叠层。通常，圆周区的宽度约3mm。
参考图2C，除去基层叠层未保护的部分露出下面的晶片表面。图示地露出晶片的圆周区、侧面和底部的表面。在一个实施例中，使用湿腐蚀除去基层叠层未保护的部分。湿腐蚀使用已知的化学物质，例如HF/Glyserol溶液或其它合适的湿腐蚀化学物质，以除去包括基层叠层的材料。然后除去块掩模，在原始芯片区域上留下基层叠层210。
在图2D中，接着在晶片上形成介质层270。在一个实施例中，通过热氧化形成包括氧化物的介质层。对晶片表面进行选择性热氧化。即，由于基层叠层防止了氧扩散到下面的晶片表面，因此氧化物形成在未被基层叠层保护的晶片表面上。在基层叠层的上层为氮化物的情况中，氮化物被氧化形成氮氧化物。氧化层的厚度足以防止DT腐蚀在沟槽形成的后期露出硅表面。氧化层通常约1μm厚。
参考图2E，硬掩模250形成在晶片上。在一个实施例中，硬掩模包括硼硅玻璃(BSG)。对硅具有高腐蚀选择性的其它材料也可用作硬掩模。也可以使用包括如由TEOS形成的氧化物的这种材料。硬掩模起腐蚀DT的掩模的作用。硬掩模的厚度为例如约700nm。然而，根据DT的深度和使用的腐蚀工艺该厚度可以不同。
使用常规的光刻技术构图硬掩模，限定出要形成DT的区域。这种技术包括淀积光刻胶层并选择性地曝光露出源区和掩模。在显影期间除去光刻胶的露出或未露出的部分，这取决于是正性还是负性类型的光刻胶。由此，DT区域内的硬掩模未被光刻胶层保护。然后除去DT区域内的硬掩模和基层叠层的其它层，露出下面的硅晶片。通过例如RIE除去基层叠层。
构图基层叠层后，进行DT腐蚀产生DT。DT腐蚀例如是RIE。氧化层270在晶片的圆周区域和侧面提供附加保护。由此，DT腐蚀没有穿透到圆周区和侧面的晶片内，防止在这些区域内形成黑硅。
继续工艺形成IC的剩余部分。即。例如包括形成多个图1中介绍的DRAM单元以及制备DRAM芯片的支撑器件。
虽然参考不同的实施例具体地示出并介绍了本发明，但本领域的技术人员应该知道可以对本发明作出修改和变形而不脱离本发明的范围。因此本发明的范围不是参考以上说明而是以权利要求书及其等同物的全部范围来确定。

Claims (1)

1．一种含有减少形成黑硅工艺的半导体器件的制备方法，包括以下步骤：
提供晶片；
在至少晶片的一个主表面上形成基层叠层；
构图基层叠层以保护晶片主表面的初始芯片区域，同时留出未保护的圆周区；以及
在基层叠层未保护的晶片区域上形成介质层，在随后的腐蚀工艺期间，介质层提供附加的保护以减少黑硅的形成。
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