KR100560012B1 - 반도체 장치의 연마제 및 연마제를 이용한 반도체 장치의제조방법 - Google Patents
반도체 장치의 연마제 및 연마제를 이용한 반도체 장치의제조방법 Download PDFInfo
- Publication number
- KR100560012B1 KR100560012B1 KR1020030057798A KR20030057798A KR100560012B1 KR 100560012 B1 KR100560012 B1 KR 100560012B1 KR 1020030057798 A KR1020030057798 A KR 1020030057798A KR 20030057798 A KR20030057798 A KR 20030057798A KR 100560012 B1 KR100560012 B1 KR 100560012B1
- Authority
- KR
- South Korea
- Prior art keywords
- abrasive
- polishing
- cerium oxide
- semiconductor device
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002242041A JP2004079968A (ja) | 2002-08-22 | 2002-08-22 | 半導体装置の研磨剤及び研磨剤を用いた半導体装置の製造方法 |
| JPJP-P-2002-00242041 | 2002-08-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20040018172A KR20040018172A (ko) | 2004-03-02 |
| KR100560012B1 true KR100560012B1 (ko) | 2006-03-15 |
Family
ID=31884572
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020030057798A Expired - Fee Related KR100560012B1 (ko) | 2002-08-22 | 2003-08-21 | 반도체 장치의 연마제 및 연마제를 이용한 반도체 장치의제조방법 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6878631B2 (https=) |
| JP (1) | JP2004079968A (https=) |
| KR (1) | KR100560012B1 (https=) |
| CN (1) | CN1485393A (https=) |
| TW (1) | TW200418965A (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11685849B2 (en) | 2019-10-11 | 2023-06-27 | Saint-Gobain Abrasives, Inc. | Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007008232A1 (de) * | 2007-02-20 | 2008-08-21 | Evonik Degussa Gmbh | Dispersion enthaltend Ceroxid und kolloidales Siliciumdioxid |
| DE102007062572A1 (de) * | 2007-12-22 | 2009-06-25 | Evonik Degussa Gmbh | Ceroxid und kolloidales Siliciumdioxid enthaltende Dispersion |
| US9868886B2 (en) | 2011-12-28 | 2018-01-16 | Konica Minolta, Inc. | Abrasive agent for substrates and substrate manufacturing method |
| JP6560155B2 (ja) | 2016-04-20 | 2019-08-14 | 信越化学工業株式会社 | 合成石英ガラス基板用研磨剤及び合成石英ガラス基板の研磨方法 |
| JP7038022B2 (ja) * | 2018-08-06 | 2022-03-17 | 日揮触媒化成株式会社 | セリア系微粒子分散液、その製造方法およびセリア系微粒子分散液を含む研磨用砥粒分散液 |
| JP7038031B2 (ja) * | 2018-09-28 | 2022-03-17 | 日揮触媒化成株式会社 | セリア系複合微粒子分散液、その製造方法及びセリア系複合微粒子分散液を含む研磨用砥粒分散液 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5684782A (en) * | 1979-12-14 | 1981-07-10 | Fuji Electric Co Ltd | Cleaning abrasive material for electrophotographic photosensitive material |
| US4971602A (en) * | 1989-09-26 | 1990-11-20 | Crawford Robert B | Method for grinding gear teeth |
| DE4217720C1 (de) * | 1992-05-29 | 1993-11-04 | Starck H C Gmbh Co Kg | Gesinterte verbundschleifkoerper, verfahren zu ihrer herstellung sowie deren verwendung |
| JPH09321003A (ja) | 1995-05-22 | 1997-12-12 | Sumitomo Chem Co Ltd | 研磨材およびその製造方法、ならびにそれを使用した半導体基板上の絶縁膜の平坦化方法 |
| JPH10135163A (ja) | 1996-09-03 | 1998-05-22 | Sumitomo Chem Co Ltd | 半導体基板上の金属膜研磨用組成物及びこれを使用した半導体基板上の金属膜の平坦化方法 |
| US6602439B1 (en) * | 1997-02-24 | 2003-08-05 | Superior Micropowders, Llc | Chemical-mechanical planarization slurries and powders and methods for using same |
-
2002
- 2002-08-22 JP JP2002242041A patent/JP2004079968A/ja not_active Abandoned
- 2002-10-15 US US10/269,996 patent/US6878631B2/en not_active Expired - Fee Related
-
2003
- 2003-08-11 TW TW092121990A patent/TW200418965A/zh unknown
- 2003-08-21 KR KR1020030057798A patent/KR100560012B1/ko not_active Expired - Fee Related
- 2003-08-22 CN CNA03155119XA patent/CN1485393A/zh active Pending
-
2004
- 2004-08-31 US US10/929,376 patent/US20050026441A1/en not_active Abandoned
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11685849B2 (en) | 2019-10-11 | 2023-06-27 | Saint-Gobain Abrasives, Inc. | Abrasive particle including coating, abrasive article including the abrasive particles, and method of forming |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004079968A (ja) | 2004-03-11 |
| US20040036149A1 (en) | 2004-02-26 |
| US20050026441A1 (en) | 2005-02-03 |
| TW200418965A (en) | 2004-10-01 |
| KR20040018172A (ko) | 2004-03-02 |
| US6878631B2 (en) | 2005-04-12 |
| CN1485393A (zh) | 2004-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6627107B2 (en) | Slurry for chemical mechanical polishing silicon dioxide | |
| US6811470B2 (en) | Methods and compositions for chemical mechanical polishing shallow trench isolation substrates | |
| EP1106663A1 (en) | Slurry for chemical mechanical polishing silicon dioxide | |
| TWI828668B (zh) | 研磨用組合物及使用此的研磨方法 | |
| US7063597B2 (en) | Polishing processes for shallow trench isolation substrates | |
| US20090258493A1 (en) | Semiconductor device manufacturing method | |
| JP2004349426A (ja) | Sti用化学機械研磨方法 | |
| US20130078784A1 (en) | Cmp slurry and method for manufacturing semiconductor device | |
| JP2012502501A (ja) | 化学的機械研磨用組成物、その製造方法、及びその使用方法 | |
| KR102322420B1 (ko) | 저결점의 화학적 기계적 폴리싱 조성물 | |
| KR100560012B1 (ko) | 반도체 장치의 연마제 및 연마제를 이용한 반도체 장치의제조방법 | |
| JP2000243733A (ja) | 素子分離形成方法 | |
| KR20250010562A (ko) | 폴리싱 패드 그루브 막힘을 방지하기 위한 화학적 기계적 폴리싱 조성물 및 방법 | |
| KR20080076712A (ko) | 기체 연마 방법, 반도체장치 및 그 제조 방법 | |
| CN100414666C (zh) | 复合式化学机械抛光法 | |
| US20080314872A1 (en) | Chemical-Mechanical Polishing Compositions Containing Aspartame And Methods Of Making And Using The Same | |
| JPWO2004100243A1 (ja) | ナノトポグラフィ効果を補償し得る化学機械的研磨用スラリー組成物およびこれを利用した半導体素子の表面平坦化方法 | |
| US7109117B2 (en) | Method for chemical mechanical polishing of a shallow trench isolation structure | |
| US20080176403A1 (en) | Method of polishing a layer and method of manufacturing a semiconductor device using the same | |
| KR20050073044A (ko) | 화학적기계연마 방법 | |
| JP2001057352A (ja) | 基板の研磨方法 | |
| JP2001308043A (ja) | Cmp研磨剤及び基板の研磨方法 | |
| Oliver | Cmp technology | |
| KR100351442B1 (ko) | Sti-cmp 연마제와 이를 이용한 연마방법 | |
| KR20220104999A (ko) | 세라아가 코팅된 화학기계연마용 연마입자 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-5-5-R10-R17-oth-X000 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20120223 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 7 |
|
| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20130307 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
|
| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20130307 |
|
| R18 | Changes to party contact information recorded |
Free format text: ST27 STATUS EVENT CODE: A-5-5-R10-R18-OTH-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |