KR100558190B1 - 원자외선 노광용 포지티브 포토레지스트 조성물 - Google Patents

원자외선 노광용 포지티브 포토레지스트 조성물 Download PDF

Info

Publication number
KR100558190B1
KR100558190B1 KR1019990009385A KR19990009385A KR100558190B1 KR 100558190 B1 KR100558190 B1 KR 100558190B1 KR 1019990009385 A KR1019990009385 A KR 1019990009385A KR 19990009385 A KR19990009385 A KR 19990009385A KR 100558190 B1 KR100558190 B1 KR 100558190B1
Authority
KR
South Korea
Prior art keywords
group
substituted
resin
groups
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019990009385A
Other languages
English (en)
Korean (ko)
Other versions
KR19990078077A (ko
Inventor
사토켄이치로오
Original Assignee
후지 샤신 필름 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지 샤신 필름 가부시기가이샤 filed Critical 후지 샤신 필름 가부시기가이샤
Publication of KR19990078077A publication Critical patent/KR19990078077A/ko
Application granted granted Critical
Publication of KR100558190B1 publication Critical patent/KR100558190B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1019990009385A 1998-03-20 1999-03-19 원자외선 노광용 포지티브 포토레지스트 조성물 Expired - Fee Related KR100558190B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP7247898 1998-03-20
JP98-72478 1998-03-20
JP13691898A JP3847454B2 (ja) 1998-03-20 1998-05-19 遠紫外線露光用ポジ型フォトレジスト組成物及びパターン形成方法
JP98-136918 1998-05-19

Publications (2)

Publication Number Publication Date
KR19990078077A KR19990078077A (ko) 1999-10-25
KR100558190B1 true KR100558190B1 (ko) 2006-03-10

Family

ID=26413607

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990009385A Expired - Fee Related KR100558190B1 (ko) 1998-03-20 1999-03-19 원자외선 노광용 포지티브 포토레지스트 조성물

Country Status (3)

Country Link
US (1) US6159655A (enExample)
JP (1) JP3847454B2 (enExample)
KR (1) KR100558190B1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW457277B (en) * 1998-05-11 2001-10-01 Shinetsu Chemical Co Ester compounds, polymers, resist composition and patterning process
JP3844322B2 (ja) * 1998-07-02 2006-11-08 富士写真フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
KR20000015014A (ko) * 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
KR100682169B1 (ko) * 1999-07-30 2007-02-12 주식회사 하이닉스반도체 신규의 포토레지스트용 공중합체 및 이를 이용한 포토레지스트조성물
JP3955419B2 (ja) * 1999-10-20 2007-08-08 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
TW564331B (en) * 1999-10-28 2003-12-01 Fuji Photo Film Co Ltd Positive-form photoresist composition
KR100546105B1 (ko) * 1999-11-03 2006-01-24 주식회사 하이닉스반도체 신규의 포토레지스트용 중합체 및 이를 함유하는포토레지스트 조성물
JP4529245B2 (ja) * 1999-12-03 2010-08-25 住友化学株式会社 化学増幅型ポジ型レジスト組成物
KR20010054851A (ko) * 1999-12-08 2001-07-02 윤종용 지환식 감광성 폴리머 및 이를 포함하는 레지스트조성물과 그 제조방법
JP2001235865A (ja) * 2000-02-23 2001-08-31 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP4166402B2 (ja) * 2000-02-28 2008-10-15 富士フイルム株式会社 遠紫外線露光用ポジ型フォトレジスト組成物
EP1275666A4 (en) * 2000-04-04 2007-10-24 Daikin Ind Ltd NEW FLUOROPOLYMER WITH ACID-ACTIVE GROUP AND CHEMICALLY REINFORCED PHOTORESIST COMPOSITIONS THAT CONTAIN THEM
KR100527533B1 (ko) * 2000-06-21 2005-11-09 주식회사 하이닉스반도체 Ｔｉｐｓ 공정용 포토레지스트 중합체 및 이를 함유하는포토레지스트 조성물
JP4469080B2 (ja) * 2000-12-13 2010-05-26 信越化学工業株式会社 脂環構造を有する新規第三級アルコール化合物
JP4255100B2 (ja) * 2001-04-06 2009-04-15 富士フイルム株式会社 ＡｒＦエキシマレ−ザ−露光用ポジ型フォトレジスト組成物及びそれを用いたパタ−ン形成方法
TW591329B (en) * 2001-04-21 2004-06-11 Samsung Electronics Co Ltd Acetal group containing norbornene copolymer for photoresist, method for producing the same and photoresist composition containing the same
US6737215B2 (en) * 2001-05-11 2004-05-18 Clariant Finance (Bvi) Ltd Photoresist composition for deep ultraviolet lithography
US20030171773A1 (en) 2002-03-06 2003-09-11 Carrison Harold F. Methods for aneurysm repair
US6756180B2 (en) 2002-10-22 2004-06-29 International Business Machines Corporation Cyclic olefin-based resist compositions having improved image stability
JP5117484B2 (ja) * 2009-12-28 2013-01-16 東京応化工業株式会社 新規な化合物、及びその製造方法
KR101496976B1 (ko) * 2011-07-14 2015-03-02 스미토모 베이클리트 컴퍼니 리미티드 화학 방사선에 대한 이미지-와이즈 노광 후에 패턴화된 층을 형성하는 중합체 및 이의 조성물
JP6414237B2 (ja) * 2017-01-12 2018-10-31 住友ベークライト株式会社 ポリマー、ポリマーの製造方法、感光性樹脂組成物および電子装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140143A (ja) * 1987-11-27 1989-06-01 Tosoh Corp パターン形成材料
JPH0580515A (ja) * 1991-09-19 1993-04-02 Fujitsu Ltd レジスト組成物とレジストパターンの形成方法
JPH05224422A (ja) * 1991-09-06 1993-09-03 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH1069083A (ja) * 1996-06-24 1998-03-10 Hyundai Electron Ind Co Ltd フォトレジスト用共重合体及びフォトレジスト組成物

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6013416A (en) * 1995-06-28 2000-01-11 Fujitsu Limited Chemically amplified resist compositions and process for the formation of resist patterns
JP3804138B2 (ja) * 1996-02-09 2006-08-02 Ｊｓｒ株式会社 ＡｒＦエキシマレーザー照射用感放射線性樹脂組成物
DE69803117T2 (de) * 1997-05-12 2002-10-02 Fuji Photo Film Co., Ltd. Positiv arbeitende Resistzusammensetzung

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01140143A (ja) * 1987-11-27 1989-06-01 Tosoh Corp パターン形成材料
JPH05224422A (ja) * 1991-09-06 1993-09-03 Japan Synthetic Rubber Co Ltd 感放射線性組成物
JPH0580515A (ja) * 1991-09-19 1993-04-02 Fujitsu Ltd レジスト組成物とレジストパターンの形成方法
JPH08202039A (ja) * 1995-01-30 1996-08-09 Japan Synthetic Rubber Co Ltd 感放射線性樹脂組成物
JPH1069083A (ja) * 1996-06-24 1998-03-10 Hyundai Electron Ind Co Ltd フォトレジスト用共重合体及びフォトレジスト組成物

Also Published As

Publication number Publication date
JPH11327147A (ja) 1999-11-26
JP3847454B2 (ja) 2006-11-22
KR19990078077A (ko) 1999-10-25
US6159655A (en) 2000-12-12

Similar Documents

Publication Publication Date Title
KR100558190B1 (ko) 원자외선 노광용 포지티브 포토레지스트 조성물
KR100610165B1 (ko) 포지티브 포토레지스트 조성물
KR100931617B1 (ko) 포지티브 레지스트 조성물
US6103449A (en) Negative working photoresist composition
KR100522487B1 (ko) 포지티브형 포토레지스트 조성물
KR100479275B1 (ko) 원자외선노광용포지티브포토레지스트조성물
JP3476374B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
KR100569641B1 (ko) 원자외선 노광용 포지티브 포토레지스트 조성물
JP3832780B2 (ja) ポジ型フォトレジスト組成物
JPH11109630A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2000047387A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
KR100657230B1 (ko) 포지티브 포토레지스트 조성물
JP3912761B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3865863B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH1130864A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3976108B2 (ja) パターン形成方法
JP3862247B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3791718B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3890357B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JPH11184090A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2005091427A (ja) 感光性組成物及びそれを用いたパターン形成方法
JP2000010285A (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP3791715B2 (ja) ポジ型フォトレジスト組成物
JP3797506B2 (ja) 遠紫外線露光用ポジ型フォトレジスト組成物
JP2000194136A (ja) パタ―ン形成方法

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20120130

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130301

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130301

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000