KR100556308B1 - 화상센서및고체상태화상감지장치의제조방법 - Google Patents
화상센서및고체상태화상감지장치의제조방법 Download PDFInfo
- Publication number
- KR100556308B1 KR100556308B1 KR1019980006369A KR19980006369A KR100556308B1 KR 100556308 B1 KR100556308 B1 KR 100556308B1 KR 1019980006369 A KR1019980006369 A KR 1019980006369A KR 19980006369 A KR19980006369 A KR 19980006369A KR 100556308 B1 KR100556308 B1 KR 100556308B1
- Authority
- KR
- South Korea
- Prior art keywords
- pixel
- pixels
- contact
- gate
- reset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012546 transfer Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 14
- 230000035945 sensitivity Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
- H10F39/1865—Overflow drain structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US8/808,444 | 1997-02-28 | ||
| US08/808,4444 | 1997-02-28 | ||
| US08/808,444 US6160281A (en) | 1997-02-28 | 1997-02-28 | Active pixel sensor with inter-pixel function sharing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980071796A KR19980071796A (ko) | 1998-10-26 |
| KR100556308B1 true KR100556308B1 (ko) | 2006-05-25 |
Family
ID=25198772
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980006369A Expired - Lifetime KR100556308B1 (ko) | 1997-02-28 | 1998-02-27 | 화상센서및고체상태화상감지장치의제조방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6160281A (enExample) |
| EP (1) | EP0862219B1 (enExample) |
| JP (1) | JPH10256521A (enExample) |
| KR (1) | KR100556308B1 (enExample) |
| DE (1) | DE69840490D1 (enExample) |
| TW (1) | TW392352B (enExample) |
Families Citing this family (109)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6160281A (en) * | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
| US6107655A (en) | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
| JP3496918B2 (ja) * | 1997-12-26 | 2004-02-16 | キヤノン株式会社 | 固体撮像装置 |
| US6977684B1 (en) * | 1998-04-30 | 2005-12-20 | Canon Kabushiki Kaisha | Arrangement of circuits in pixels, each circuit shared by a plurality of pixels, in image sensing apparatus |
| KR19990084630A (ko) * | 1998-05-08 | 1999-12-06 | 김영환 | 씨모스 이미지 센서 및 그 구동 방법 |
| FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
| US6239456B1 (en) | 1998-08-19 | 2001-05-29 | Photobit Corporation | Lock in pinned photodiode photodetector |
| US6734906B1 (en) * | 1998-09-02 | 2004-05-11 | Canon Kabushiki Kaisha | Image pickup apparatus with photoelectric conversion portions arranged two dimensionally |
| US6657665B1 (en) * | 1998-12-31 | 2003-12-02 | Eastman Kodak Company | Active Pixel Sensor with wired floating diffusions and shared amplifier |
| US7116366B1 (en) | 1999-08-31 | 2006-10-03 | Micron Technology, Inc. | CMOS aps pixel sensor dynamic range increase |
| US6486913B1 (en) * | 1999-09-30 | 2002-11-26 | Intel Corporation | Pixel array with shared reset circuitry |
| KR100683396B1 (ko) * | 1999-12-28 | 2007-02-15 | 매그나칩 반도체 유한회사 | 이미지센서의 화소어레이 주사 방법 |
| WO2001063905A2 (en) * | 2000-02-23 | 2001-08-30 | Photobit Corporation | Frame shutter pixel with an isolated storage node |
| US6552322B1 (en) * | 2000-05-16 | 2003-04-22 | Micron Technology, Inc. | Shared photodetector pixel image sensor |
| JP2002122887A (ja) * | 2000-06-12 | 2002-04-26 | Nec Corp | 液晶表示装置及びその製造方法 |
| US6642961B1 (en) * | 2000-07-12 | 2003-11-04 | Vanguard International Semiconductor Corp. | Method of defective pixel address detection for image sensors having windowing function |
| US7154546B1 (en) * | 2000-08-07 | 2006-12-26 | Micron Technology, Inc. | Pixel optimization for color |
| US6541794B1 (en) * | 2000-08-31 | 2003-04-01 | Motorola, Inc. | Imaging device and method |
| US6365926B1 (en) | 2000-09-20 | 2002-04-02 | Eastman Kodak Company | CMOS active pixel with scavenging diode |
| US6552323B2 (en) * | 2000-12-06 | 2003-04-22 | Eastman Kodak Company | Image sensor with a shared output signal line |
| FR2820883B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
| FR2820882B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
| FR2824665B1 (fr) * | 2001-05-09 | 2004-07-23 | St Microelectronics Sa | Photodetecteur de type cmos |
| CN1225897C (zh) * | 2002-08-21 | 2005-11-02 | 佳能株式会社 | 摄像装置 |
| US6919551B2 (en) | 2002-08-29 | 2005-07-19 | Micron Technology Inc. | Differential column readout scheme for CMOS APS pixels |
| US7375748B2 (en) * | 2002-08-29 | 2008-05-20 | Micron Technology, Inc. | Differential readout from pixels in CMOS sensor |
| JP3792628B2 (ja) * | 2002-09-02 | 2006-07-05 | 富士通株式会社 | 固体撮像装置及び画像読み出し方法 |
| FR2844398A1 (fr) * | 2002-09-11 | 2004-03-12 | St Microelectronics Sa | Photodetecteur d'un capteur d'images |
| US7489352B2 (en) * | 2002-11-15 | 2009-02-10 | Micron Technology, Inc. | Wide dynamic range pinned photodiode active pixel sensor (APS) |
| JP4208559B2 (ja) | 2002-12-03 | 2009-01-14 | キヤノン株式会社 | 光電変換装置 |
| CN100362854C (zh) * | 2003-02-13 | 2008-01-16 | 松下电器产业株式会社 | 固体摄像装置、其驱动方法及使用它的照相机 |
| JP3794637B2 (ja) * | 2003-03-07 | 2006-07-05 | 松下電器産業株式会社 | 固体撮像装置 |
| KR100523672B1 (ko) * | 2003-04-30 | 2005-10-24 | 매그나칩 반도체 유한회사 | 다중 플로팅디퓨젼영역을 구비하는 씨모스 이미지센서 |
| US7542085B2 (en) * | 2003-11-26 | 2009-06-02 | Aptina Imaging Corporation | Image sensor with a capacitive storage node linked to transfer gate |
| US7332786B2 (en) * | 2003-11-26 | 2008-02-19 | Micron Technology, Inc. | Anti-blooming storage pixel |
| US20050157194A1 (en) * | 2004-01-06 | 2005-07-21 | Altice Peter P.Jr. | Imager device with dual storage nodes |
| US7087883B2 (en) * | 2004-02-04 | 2006-08-08 | Omnivision Technologies, Inc. | CMOS image sensor using shared transistors between pixels with dual pinned photodiode |
| JP4067054B2 (ja) * | 2004-02-13 | 2008-03-26 | キヤノン株式会社 | 固体撮像装置および撮像システム |
| JP4230406B2 (ja) | 2004-04-27 | 2009-02-25 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
| KR100674908B1 (ko) * | 2004-06-01 | 2007-01-26 | 삼성전자주식회사 | 필 팩터가 개선된 cmos 이미지 소자 |
| JP4935354B2 (ja) * | 2004-07-20 | 2012-05-23 | 富士通セミコンダクター株式会社 | Cmos撮像素子 |
| JP4971586B2 (ja) | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
| JP2006093263A (ja) * | 2004-09-22 | 2006-04-06 | Seiko Epson Corp | 固体撮像装置及びその駆動方法 |
| JP2006147708A (ja) * | 2004-11-17 | 2006-06-08 | Omron Corp | 撮像デバイス |
| US20060125947A1 (en) * | 2004-12-09 | 2006-06-15 | Packer Jimmy L | Imaging with clustered photosite arrays |
| KR100690880B1 (ko) * | 2004-12-16 | 2007-03-09 | 삼성전자주식회사 | 픽셀별 광감도가 균일한 이미지 센서 및 그 제조 방법 |
| US20060255381A1 (en) * | 2005-05-10 | 2006-11-16 | Micron Technology, Inc. | Pixel with gate contacts over active region and method of forming same |
| US7446357B2 (en) * | 2005-05-11 | 2008-11-04 | Micron Technology, Inc. | Split trunk pixel layout |
| US7830437B2 (en) * | 2005-05-11 | 2010-11-09 | Aptina Imaging Corp. | High fill factor multi-way shared pixel |
| US7342213B2 (en) * | 2005-06-01 | 2008-03-11 | Eastman Kodak Company | CMOS APS shared amplifier pixel with symmetrical field effect transistor placement |
| KR100660865B1 (ko) * | 2005-06-08 | 2006-12-26 | 삼성전자주식회사 | 이미지 센서에서 공유된 배선/트랜지스터를 가지는 픽셀회로 및 구동 방법 |
| KR100718781B1 (ko) | 2005-06-15 | 2007-05-16 | 매그나칩 반도체 유한회사 | 콤팩트 픽셀 레이아웃을 갖는 cmos 이미지 센서 |
| US7449736B2 (en) | 2005-07-12 | 2008-11-11 | Micron Technology, Inc. | Pixel with transfer gate with no isolation edge |
| US7468532B2 (en) * | 2005-07-12 | 2008-12-23 | Aptina Imaging Corporation | Method and apparatus providing capacitor on an electrode of an imager photosensor |
| US7728896B2 (en) * | 2005-07-12 | 2010-06-01 | Micron Technology, Inc. | Dual conversion gain gate and capacitor and HDR combination |
| US7432540B2 (en) | 2005-08-01 | 2008-10-07 | Micron Technology, Inc. | Dual conversion gain gate and capacitor combination |
| US20070035649A1 (en) * | 2005-08-10 | 2007-02-15 | Micron Technology, Inc. | Image pixel reset through dual conversion gain gate |
| US7511323B2 (en) * | 2005-08-11 | 2009-03-31 | Aptina Imaging Corporation | Pixel cells in a honeycomb arrangement |
| US20070040922A1 (en) * | 2005-08-22 | 2007-02-22 | Micron Technology, Inc. | HDR/AB on multi-way shared pixels |
| US7804117B2 (en) * | 2005-08-24 | 2010-09-28 | Aptina Imaging Corporation | Capacitor over red pixel |
| US7800146B2 (en) * | 2005-08-26 | 2010-09-21 | Aptina Imaging Corporation | Implanted isolation region for imager pixels |
| US7714917B2 (en) | 2005-08-30 | 2010-05-11 | Aptina Imaging Corporation | Method and apparatus providing a two-way shared storage gate on a four-way shared pixel |
| US7244918B2 (en) * | 2005-08-30 | 2007-07-17 | Micron Technology, Inc. | Method and apparatus providing a two-way shared storage gate on a four-way shared pixel |
| JP4486015B2 (ja) * | 2005-09-13 | 2010-06-23 | パナソニック株式会社 | 固体撮像装置 |
| JP4752447B2 (ja) * | 2005-10-21 | 2011-08-17 | ソニー株式会社 | 固体撮像装置およびカメラ |
| JP4851164B2 (ja) * | 2005-10-31 | 2012-01-11 | シャープ株式会社 | 増幅型固体撮像装置 |
| KR100778854B1 (ko) * | 2005-12-29 | 2007-11-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
| US7602429B2 (en) * | 2006-02-01 | 2009-10-13 | Chi Wah Kok | Paired differential active pixel sensor |
| US7667183B2 (en) * | 2006-03-10 | 2010-02-23 | Samsung Electronics Co., Ltd. | Image sensor with high fill factor pixels and method for forming an image sensor |
| US7608873B2 (en) * | 2006-04-27 | 2009-10-27 | Aptina Imaging Corporation | Buried-gated photodiode device and method for configuring and operating same |
| EP2942813B1 (en) * | 2006-08-09 | 2020-09-30 | Tohoku University | Optical sensor and solid-state imaging device |
| US7764315B2 (en) * | 2006-08-24 | 2010-07-27 | Dalsa Corporation | CMOS imaging facility and a modular array for use in such a facility |
| US8026966B2 (en) | 2006-08-29 | 2011-09-27 | Micron Technology, Inc. | Method, apparatus and system providing a storage gate pixel with high dynamic range |
| US7773138B2 (en) * | 2006-09-13 | 2010-08-10 | Tower Semiconductor Ltd. | Color pattern and pixel level binning for APS image sensor using 2×2 photodiode sharing scheme |
| US7916195B2 (en) | 2006-10-13 | 2011-03-29 | Sony Corporation | Solid-state imaging device, imaging apparatus and camera |
| WO2008088981A1 (en) | 2007-01-11 | 2008-07-24 | Micron Technology, Inc. | Missing pixel architecture |
| EP1971088A1 (en) * | 2007-03-12 | 2008-09-17 | Nokia Corporation | Release of resources in a communication system |
| US7915702B2 (en) * | 2007-03-15 | 2011-03-29 | Eastman Kodak Company | Reduced pixel area image sensor |
| US8072513B2 (en) * | 2007-05-02 | 2011-12-06 | Canon Kabushiki Kaisha | Image capturing system, signal processing circuit, and signal processing method |
| US20080296639A1 (en) * | 2007-06-01 | 2008-12-04 | Dalsa Corporation | Semiconductor image sensor array device, apparatus comprising such a device and method for operating such a device |
| JP5298499B2 (ja) * | 2007-10-25 | 2013-09-25 | 住友電気工業株式会社 | 受光素子アレイおよび撮像装置 |
| US8130300B2 (en) | 2007-12-20 | 2012-03-06 | Aptina Imaging Corporation | Imager method and apparatus having combined select signals |
| JP4952601B2 (ja) * | 2008-02-04 | 2012-06-13 | 日本テキサス・インスツルメンツ株式会社 | 固体撮像装置 |
| US8077236B2 (en) | 2008-03-20 | 2011-12-13 | Aptina Imaging Corporation | Method and apparatus providing reduced metal routing in imagers |
| US8031247B2 (en) * | 2008-08-20 | 2011-10-04 | Aptina Imaging Corporation | Method and apparatus providing an imager with a shared power supply and readout line for pixels |
| TWI433307B (zh) | 2008-10-22 | 2014-04-01 | Sony Corp | 固態影像感測器、其驅動方法、成像裝置及電子器件 |
| US8130302B2 (en) * | 2008-11-07 | 2012-03-06 | Aptina Imaging Corporation | Methods and apparatus providing selective binning of pixel circuits |
| JP5149143B2 (ja) | 2008-12-24 | 2013-02-20 | シャープ株式会社 | 固体撮像素子およびその製造方法、電子情報機器 |
| JP2010199450A (ja) * | 2009-02-27 | 2010-09-09 | Sony Corp | 固体撮像装置の製造方法、固体撮像装置および電子機器 |
| US8405751B2 (en) * | 2009-08-03 | 2013-03-26 | International Business Machines Corporation | Image sensor pixel structure employing a shared floating diffusion |
| KR20110050063A (ko) * | 2009-11-06 | 2011-05-13 | 삼성전자주식회사 | 픽셀과 이를 포함하는 이미지 처리 장치들 |
| JP5537172B2 (ja) | 2010-01-28 | 2014-07-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| JP5688540B2 (ja) * | 2010-02-26 | 2015-03-25 | パナソニックIpマネジメント株式会社 | 固体撮像装置およびカメラ |
| JP5541718B2 (ja) | 2010-08-19 | 2014-07-09 | キヤノン株式会社 | 撮像装置及びその欠陥画素検出方法 |
| JP5458043B2 (ja) * | 2011-03-08 | 2014-04-02 | 株式会社東芝 | 固体撮像装置 |
| JP5449242B2 (ja) * | 2011-03-29 | 2014-03-19 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
| JP2013038174A (ja) * | 2011-08-05 | 2013-02-21 | Canon Inc | 軟x線検出装置、及び軟x線検出システム |
| JP5963450B2 (ja) | 2012-01-18 | 2016-08-03 | キヤノン株式会社 | 撮像装置および撮像システム |
| JP2014049727A (ja) * | 2012-09-04 | 2014-03-17 | Canon Inc | 固体撮像装置 |
| US9210345B2 (en) | 2013-02-11 | 2015-12-08 | Tower Semiconductor Ltd. | Shared readout low noise global shutter image sensor method |
| US9160956B2 (en) | 2013-02-11 | 2015-10-13 | Tower Semiconductor Ltd. | Shared readout low noise global shutter image sensor |
| JP5874777B2 (ja) * | 2014-04-25 | 2016-03-02 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| US9526468B2 (en) | 2014-09-09 | 2016-12-27 | General Electric Company | Multiple frame acquisition for exposure control in X-ray medical imagers |
| JP2017175164A (ja) * | 2017-06-12 | 2017-09-28 | ソニー株式会社 | 固体撮像装置及び電子機器 |
| CN109427287B (zh) * | 2017-08-29 | 2020-12-22 | 昆山国显光电有限公司 | 适用于高像素密度的像素驱动电路、像素结构和制作方法 |
| JP7086783B2 (ja) * | 2018-08-13 | 2022-06-20 | 株式会社東芝 | 固体撮像装置 |
| KR20220140905A (ko) | 2021-04-09 | 2022-10-19 | 삼성전자주식회사 | 이미지 센서 |
| JP6967173B1 (ja) | 2021-07-19 | 2021-11-17 | テックポイント インクTechpoint, Inc. | 撮像素子及び撮像装置 |
| CN120239349A (zh) * | 2023-12-20 | 2025-07-01 | 格科微电子(上海)有限公司 | 一种图像传感器及其制备方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4636865A (en) * | 1984-04-27 | 1987-01-13 | Olympus Optical Co., Ltd. | Solid state image sensor |
| EP0757476A2 (en) * | 1995-08-02 | 1997-02-05 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831585B2 (ja) * | 1987-04-20 | 1996-03-27 | オリンパス光学工業株式会社 | 固体撮像装置 |
| US5471515A (en) * | 1994-01-28 | 1995-11-28 | California Institute Of Technology | Active pixel sensor with intra-pixel charge transfer |
| US5631704A (en) * | 1994-10-14 | 1997-05-20 | Lucent Technologies, Inc. | Active pixel sensor and imaging system having differential mode |
| US5614744A (en) * | 1995-08-04 | 1997-03-25 | National Semiconductor Corporation | CMOS-based, low leakage active pixel array with anti-blooming isolation |
| US5587596A (en) * | 1995-09-20 | 1996-12-24 | National Semiconductor Corporation | Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
| US5608243A (en) * | 1995-10-19 | 1997-03-04 | National Semiconductor Corporation | Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range |
| EP0897597B1 (en) * | 1996-05-08 | 2002-09-11 | iFire Technology Inc. | High resolution flat panel for radiation imaging |
| US6160281A (en) * | 1997-02-28 | 2000-12-12 | Eastman Kodak Company | Active pixel sensor with inter-pixel function sharing |
-
1997
- 1997-02-28 US US08/808,444 patent/US6160281A/en not_active Expired - Lifetime
-
1998
- 1998-02-12 EP EP98200441A patent/EP0862219B1/en not_active Expired - Lifetime
- 1998-02-12 DE DE69840490T patent/DE69840490D1/de not_active Expired - Lifetime
- 1998-02-24 JP JP10042197A patent/JPH10256521A/ja active Pending
- 1998-02-26 TW TW087102803A patent/TW392352B/zh not_active IP Right Cessation
- 1998-02-27 KR KR1019980006369A patent/KR100556308B1/ko not_active Expired - Lifetime
-
2000
- 2000-07-28 US US09/628,362 patent/US6423994B1/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4636865A (en) * | 1984-04-27 | 1987-01-13 | Olympus Optical Co., Ltd. | Solid state image sensor |
| EP0757476A2 (en) * | 1995-08-02 | 1997-02-05 | Canon Kabushiki Kaisha | Solid state image pickup apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| TW392352B (en) | 2000-06-01 |
| EP0862219A3 (en) | 1999-01-13 |
| DE69840490D1 (de) | 2009-03-12 |
| JPH10256521A (ja) | 1998-09-25 |
| KR19980071796A (ko) | 1998-10-26 |
| US6423994B1 (en) | 2002-07-23 |
| EP0862219A2 (en) | 1998-09-02 |
| EP0862219B1 (en) | 2009-01-21 |
| US6160281A (en) | 2000-12-12 |
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