KR100556308B1 - 화상센서및고체상태화상감지장치의제조방법 - Google Patents

화상센서및고체상태화상감지장치의제조방법 Download PDF

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Publication number
KR100556308B1
KR100556308B1 KR1019980006369A KR19980006369A KR100556308B1 KR 100556308 B1 KR100556308 B1 KR 100556308B1 KR 1019980006369 A KR1019980006369 A KR 1019980006369A KR 19980006369 A KR19980006369 A KR 19980006369A KR 100556308 B1 KR100556308 B1 KR 100556308B1
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South Korea
Prior art keywords
pixel
pixels
contact
gate
reset
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Expired - Lifetime
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KR1019980006369A
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English (en)
Korean (ko)
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KR19980071796A (ko
Inventor
로버트 마이클 가이다쉬
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이스트맨 코닥 캄파니
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Publication of KR19980071796A publication Critical patent/KR19980071796A/ko
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Publication of KR100556308B1 publication Critical patent/KR100556308B1/ko
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/802Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression
    • H10F39/1865Overflow drain structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/803Pixels having integrated switching, control, storage or amplification elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/813Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019980006369A 1997-02-28 1998-02-27 화상센서및고체상태화상감지장치의제조방법 Expired - Lifetime KR100556308B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/808,444 1997-02-28
US08/808,4444 1997-02-28
US08/808,444 US6160281A (en) 1997-02-28 1997-02-28 Active pixel sensor with inter-pixel function sharing

Publications (2)

Publication Number Publication Date
KR19980071796A KR19980071796A (ko) 1998-10-26
KR100556308B1 true KR100556308B1 (ko) 2006-05-25

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980006369A Expired - Lifetime KR100556308B1 (ko) 1997-02-28 1998-02-27 화상센서및고체상태화상감지장치의제조방법

Country Status (6)

Country Link
US (2) US6160281A (enExample)
EP (1) EP0862219B1 (enExample)
JP (1) JPH10256521A (enExample)
KR (1) KR100556308B1 (enExample)
DE (1) DE69840490D1 (enExample)
TW (1) TW392352B (enExample)

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Also Published As

Publication number Publication date
TW392352B (en) 2000-06-01
EP0862219A3 (en) 1999-01-13
DE69840490D1 (de) 2009-03-12
JPH10256521A (ja) 1998-09-25
KR19980071796A (ko) 1998-10-26
US6423994B1 (en) 2002-07-23
EP0862219A2 (en) 1998-09-02
EP0862219B1 (en) 2009-01-21
US6160281A (en) 2000-12-12

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