KR100550440B1 - 실리콘단결정 인상용 석영 유리 도가니 및 그의 제조방법 - Google Patents

실리콘단결정 인상용 석영 유리 도가니 및 그의 제조방법 Download PDF

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Publication number
KR100550440B1
KR100550440B1 KR1019990018459A KR19990018459A KR100550440B1 KR 100550440 B1 KR100550440 B1 KR 100550440B1 KR 1019990018459 A KR1019990018459 A KR 1019990018459A KR 19990018459 A KR19990018459 A KR 19990018459A KR 100550440 B1 KR100550440 B1 KR 100550440B1
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KR
South Korea
Prior art keywords
quartz glass
single crystal
crucible
silicon dioxide
glass crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019990018459A
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English (en)
Korean (ko)
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KR19990088478A (ko
Inventor
사토다쯔히로
미주노시게오
오하마야수오
Original Assignee
신에쯔 세끼에이 가부시키가이샤
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Publication of KR19990088478A publication Critical patent/KR19990088478A/ko
Application granted granted Critical
Publication of KR100550440B1 publication Critical patent/KR100550440B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
KR1019990018459A 1998-05-25 1999-05-21 실리콘단결정 인상용 석영 유리 도가니 및 그의 제조방법 Expired - Lifetime KR100550440B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1998-159880 1998-05-25
JP15988098 1998-05-25
JP02262899A JP4398527B2 (ja) 1998-05-25 1999-01-29 シリコン単結晶引き上げ用石英ガラスるつぼ
JP1999-022628 1999-01-29

Publications (2)

Publication Number Publication Date
KR19990088478A KR19990088478A (ko) 1999-12-27
KR100550440B1 true KR100550440B1 (ko) 2006-02-08

Family

ID=26359887

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990018459A Expired - Lifetime KR100550440B1 (ko) 1998-05-25 1999-05-21 실리콘단결정 인상용 석영 유리 도가니 및 그의 제조방법

Country Status (6)

Country Link
US (1) US6797061B2 (enExample)
EP (1) EP1020546A4 (enExample)
JP (1) JP4398527B2 (enExample)
KR (1) KR100550440B1 (enExample)
TW (1) TW509664B (enExample)
WO (1) WO1999061685A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101406915B1 (ko) * 2010-12-03 2014-06-12 쟈판 스파 쿼츠 가부시키가이샤 실리카 유리 도가니의 제조 방법

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4549008B2 (ja) 2002-05-17 2010-09-22 信越石英株式会社 水素ドープシリカ粉及びそれを用いたシリコン単結晶引上げ用石英ガラスルツボ
JP4086283B2 (ja) * 2002-07-31 2008-05-14 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
US7427327B2 (en) * 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
US7383696B2 (en) * 2005-09-08 2008-06-10 Heraeus Shin-Etsu America, Inc. Silica glass crucible with bubble-free and reduced bubble growth wall
US20070084400A1 (en) * 2005-10-19 2007-04-19 General Electric Company Quartz glass crucible and method for treating surface of quartz glass crucible
JP5046753B2 (ja) * 2006-06-26 2012-10-10 信越化学工業株式会社 光ファイバ母材の製造方法及びその装置
TWI408259B (zh) * 2006-09-28 2013-09-11 Shinetsu Quartz Prod 具有鋇摻雜內壁的矽玻璃坩堝
US7993556B2 (en) 2007-08-08 2011-08-09 Heraeus Shin-Etsu America, Inc. Method for making a silica glass crucible
JP4702898B2 (ja) * 2007-09-18 2011-06-15 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボの製造方法
JP5273512B2 (ja) * 2007-10-25 2013-08-28 株式会社Ｓｕｍｃｏ 石英ガラスルツボとその製造方法および用途
JP4671999B2 (ja) * 2007-11-30 2011-04-20 ジャパンスーパークォーツ株式会社 石英ガラスルツボの試験方法
JP4995069B2 (ja) * 2007-12-28 2012-08-08 ジャパンスーパークォーツ株式会社 内面結晶化ルツボおよび該ルツボを用いた引上げ方法
EP2264226A4 (en) * 2008-03-31 2011-07-27 Japan Super Quartz Corp QUARTZ GLASS LEVER AND MANUFACTURING METHOD THEREFOR
DE102008026890B3 (de) * 2008-06-05 2009-06-04 Heraeus Quarzglas Gmbh & Co. Kg Verfahren und Vorrichtung zur Herstellung eines Tiegels aus Quarzglas
JP5523018B2 (ja) * 2008-08-30 2014-06-18 株式会社Ｓｕｍｃｏ 石英ルツボの製造装置
JP5142912B2 (ja) * 2008-09-22 2013-02-13 ジャパンスーパークォーツ株式会社 アーク放電方法、アーク放電装置、石英ガラスルツボ製造装置
JP5467418B2 (ja) * 2010-12-01 2014-04-09 株式会社Ｓｕｍｃｏ 造粒シリカ粉の製造方法、シリカガラスルツボの製造方法
US20140041575A1 (en) * 2012-03-23 2014-02-13 Shin-Etsu Quartz Products Co., Ltd. Silica container for pulling single crystal silicon and method for producing the same
JP7163863B2 (ja) * 2019-05-08 2022-11-01 株式会社Sumco 石英ルツボ製造用モールド及びこれを用いた石英ルツボ製造装置

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DE236084C (enExample)
JPH0243720B2 (ja) * 1982-09-10 1990-10-01 Toshiba Ceramics Co Handotaishoryosekieigarasuseiroshinkan
DD236084A1 (de) * 1985-04-04 1986-05-28 Technisches Glas Veb K Verfahren zur herstellung von gelaeuterten rotationssymmetrischen kieselglashohlkoerpern
US5389582A (en) * 1985-11-06 1995-02-14 Loxley; Ted A. Cristobalite reinforcement of quartz glass
US4632686A (en) * 1986-02-24 1986-12-30 Gte Products Corporation Method of manufacturing quartz glass crucibles with low bubble content
US4935046A (en) * 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JPH01148718A (ja) * 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 石英るつぼの製造方法
JP2933404B2 (ja) * 1990-06-25 1999-08-16 信越石英 株式会社 シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
JP2747856B2 (ja) * 1991-10-31 1998-05-06 信越石英株式会社 シリコン単結晶引上げ用石英ガラスルツボ及びその製造方法
US5306473A (en) * 1992-01-31 1994-04-26 Toshiba Ceramics Co., Ltd. Quartz glass crucible for pulling a single crystal
JP2736863B2 (ja) * 1994-05-31 1998-04-02 信越石英株式会社 石英ガラスルツボの製造方法
JP2830990B2 (ja) * 1995-05-31 1998-12-02 信越石英株式会社 石英製二重ルツボの製造方法
JPH0920586A (ja) * 1995-06-30 1997-01-21 Toshiba Ceramics Co Ltd シリコン単結晶引上げ用石英ガラスルツボの製造方法
JP3533416B2 (ja) * 1996-02-06 2004-05-31 三菱住友シリコン株式会社 単結晶引上装置
JP4285788B2 (ja) * 1996-03-14 2009-06-24 信越石英株式会社 単結晶引き上げ用大口径石英るつぼの製造方法
JP3764776B2 (ja) * 1996-03-18 2006-04-12 信越石英株式会社 単結晶引き上げ用石英ガラスるつぼ及びその製造方法
JP3798849B2 (ja) * 1996-07-09 2006-07-19 信越石英株式会社 石英ルツボの製造装置及び方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101406915B1 (ko) * 2010-12-03 2014-06-12 쟈판 스파 쿼츠 가부시키가이샤 실리카 유리 도가니의 제조 방법

Also Published As

Publication number Publication date
JP4398527B2 (ja) 2010-01-13
JP2000044386A (ja) 2000-02-15
US6797061B2 (en) 2004-09-28
EP1020546A4 (en) 2001-10-10
EP1020546A1 (en) 2000-07-19
US20020029737A1 (en) 2002-03-14
TW509664B (en) 2002-11-11
KR19990088478A (ko) 1999-12-27
WO1999061685A1 (en) 1999-12-02

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