KR100535827B1 - 플라즈마 공정 챔버 내부 표면 상의 부착물 생성을 제어하는 방법 및 그 장치 - Google Patents

플라즈마 공정 챔버 내부 표면 상의 부착물 생성을 제어하는 방법 및 그 장치 Download PDF

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Publication number
KR100535827B1
KR100535827B1 KR10-1999-7008963A KR19997008963A KR100535827B1 KR 100535827 B1 KR100535827 B1 KR 100535827B1 KR 19997008963 A KR19997008963 A KR 19997008963A KR 100535827 B1 KR100535827 B1 KR 100535827B1
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KR
South Korea
Prior art keywords
substrate
plasma
antenna
gas distribution
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-1999-7008963A
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English (en)
Korean (ko)
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KR20010005887A (ko
Inventor
케네디윌리암에스.
램알버트제이.
위커토마스이.
마라쉰로버트에이.
Original Assignee
램 리서치 코포레이션
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Publication of KR20010005887A publication Critical patent/KR20010005887A/ko
Application granted granted Critical
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Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR10-1999-7008963A 1997-03-31 1998-03-26 플라즈마 공정 챔버 내부 표면 상의 부착물 생성을 제어하는 방법 및 그 장치 Expired - Fee Related KR100535827B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/828,507 1997-03-31
US8/828,507 1997-03-31
US08/828,507 US6035868A (en) 1997-03-31 1997-03-31 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
PCT/US1998/005569 WO1998044535A1 (en) 1997-03-31 1998-03-26 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber

Publications (2)

Publication Number Publication Date
KR20010005887A KR20010005887A (ko) 2001-01-15
KR100535827B1 true KR100535827B1 (ko) 2005-12-12

Family

ID=25252012

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1999-7008963A Expired - Fee Related KR100535827B1 (ko) 1997-03-31 1998-03-26 플라즈마 공정 챔버 내부 표면 상의 부착물 생성을 제어하는 방법 및 그 장치

Country Status (8)

Country Link
US (2) US6035868A (https=)
EP (1) EP0972299B1 (https=)
JP (1) JP4472789B2 (https=)
KR (1) KR100535827B1 (https=)
AT (1) ATE255275T1 (https=)
DE (1) DE69820041T2 (https=)
TW (1) TW400540B (https=)
WO (1) WO1998044535A1 (https=)

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US6355183B1 (en) * 1998-09-04 2002-03-12 Matsushita Electric Industrial Co., Ltd. Apparatus and method for plasma etching
US6491042B1 (en) * 1998-12-07 2002-12-10 Taiwan Semiconductor Manufacturing Company Post etching treatment process for high density oxide etcher
US6496366B1 (en) * 1999-10-26 2002-12-17 Rackable Systems, Llc High density computer equipment storage system
JP2001267305A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd プラズマ処理装置
US6401652B1 (en) * 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US7192874B2 (en) * 2003-07-15 2007-03-20 International Business Machines Corporation Method for reducing foreign material concentrations in etch chambers
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
US7973296B2 (en) * 2008-03-05 2011-07-05 Tetraheed Llc Electromagnetic systems with double-resonant spiral coil components
US8729806B2 (en) * 2010-02-02 2014-05-20 The Regents Of The University Of California RF-driven ion source with a back-streaming electron dump
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8936728B2 (en) * 2010-08-31 2015-01-20 Debra A. Riggs Chemicals for oil spill cleanup
USD664170S1 (en) * 2011-03-04 2012-07-24 Applied Materials, Inc. Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass
JP5642034B2 (ja) * 2011-09-13 2014-12-17 パナソニック株式会社 ドライエッチング装置
JP2013062358A (ja) * 2011-09-13 2013-04-04 Panasonic Corp ドライエッチング装置
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
WO2017127163A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

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KR100290813B1 (ko) * 1995-08-17 2001-06-01 히가시 데쓰로 플라스마 처리장치
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KR950034551A (ko) * 1994-04-28 1995-12-28 제임스 조셉 드롱 유도성 및 용량성 커플링이 조합된 고밀도 플라즈마 cvd 반응로 작동방법

Also Published As

Publication number Publication date
DE69820041D1 (de) 2004-01-08
EP0972299A1 (en) 2000-01-19
EP0972299B1 (en) 2003-11-26
KR20010005887A (ko) 2001-01-15
WO1998044535A1 (en) 1998-10-08
TW400540B (en) 2000-08-01
US6155203A (en) 2000-12-05
ATE255275T1 (de) 2003-12-15
DE69820041T2 (de) 2004-09-02
JP2001517373A (ja) 2001-10-02
US6035868A (en) 2000-03-14
JP4472789B2 (ja) 2010-06-02

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