ATE255275T1 - Verfahren und geraet zur ueberwachung von niederschlaege auf der innenoberflaeche einer plasmabarbeitungskammer - Google Patents

Verfahren und geraet zur ueberwachung von niederschlaege auf der innenoberflaeche einer plasmabarbeitungskammer

Info

Publication number
ATE255275T1
ATE255275T1 AT98913017T AT98913017T ATE255275T1 AT E255275 T1 ATE255275 T1 AT E255275T1 AT 98913017 T AT98913017 T AT 98913017T AT 98913017 T AT98913017 T AT 98913017T AT E255275 T1 ATE255275 T1 AT E255275T1
Authority
AT
Austria
Prior art keywords
processing chamber
plasma processing
dielectric member
ion bombardment
controlling
Prior art date
Application number
AT98913017T
Other languages
English (en)
Inventor
William S Kennedy
Albert J Lamm
Thomas E Wicker
Robert A Maraschin
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Application granted granted Critical
Publication of ATE255275T1 publication Critical patent/ATE255275T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
AT98913017T 1997-03-31 1998-03-26 Verfahren und geraet zur ueberwachung von niederschlaege auf der innenoberflaeche einer plasmabarbeitungskammer ATE255275T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/828,507 US6035868A (en) 1997-03-31 1997-03-31 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber
PCT/US1998/005569 WO1998044535A1 (en) 1997-03-31 1998-03-26 Method and apparatus for control of deposit build-up on an inner surface of a plasma processing chamber

Publications (1)

Publication Number Publication Date
ATE255275T1 true ATE255275T1 (de) 2003-12-15

Family

ID=25252012

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98913017T ATE255275T1 (de) 1997-03-31 1998-03-26 Verfahren und geraet zur ueberwachung von niederschlaege auf der innenoberflaeche einer plasmabarbeitungskammer

Country Status (8)

Country Link
US (2) US6035868A (de)
EP (1) EP0972299B1 (de)
JP (1) JP4472789B2 (de)
KR (1) KR100535827B1 (de)
AT (1) ATE255275T1 (de)
DE (1) DE69820041T2 (de)
TW (1) TW400540B (de)
WO (1) WO1998044535A1 (de)

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US6496366B1 (en) * 1999-10-26 2002-12-17 Rackable Systems, Llc High density computer equipment storage system
JP2001267305A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd プラズマ処理装置
US6401652B1 (en) * 2000-05-04 2002-06-11 Applied Materials, Inc. Plasma reactor inductive coil antenna with flat surface facing the plasma
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US7270724B2 (en) 2000-12-13 2007-09-18 Uvtech Systems, Inc. Scanning plasma reactor
US6773683B2 (en) * 2001-01-08 2004-08-10 Uvtech Systems, Inc. Photocatalytic reactor system for treating flue effluents
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
JP4819244B2 (ja) * 2001-05-15 2011-11-24 東京エレクトロン株式会社 プラズマ処理装置
US7192874B2 (en) * 2003-07-15 2007-03-20 International Business Machines Corporation Method for reducing foreign material concentrations in etch chambers
US20070170867A1 (en) * 2006-01-24 2007-07-26 Varian Semiconductor Equipment Associates, Inc. Plasma Immersion Ion Source With Low Effective Antenna Voltage
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
US8375890B2 (en) 2007-03-19 2013-02-19 Micron Technology, Inc. Apparatus and methods for capacitively coupled plasma vapor processing of semiconductor wafers
US7973296B2 (en) * 2008-03-05 2011-07-05 Tetraheed Llc Electromagnetic systems with double-resonant spiral coil components
US8729806B2 (en) * 2010-02-02 2014-05-20 The Regents Of The University Of California RF-driven ion source with a back-streaming electron dump
JP5546921B2 (ja) * 2010-03-26 2014-07-09 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US8936728B2 (en) * 2010-08-31 2015-01-20 Debra A. Riggs Chemicals for oil spill cleanup
USD664170S1 (en) * 2011-03-04 2012-07-24 Applied Materials, Inc. Cleaning plate for inducing turbulent flow of a processing chamber cleaning glass
JP5642034B2 (ja) * 2011-09-13 2014-12-17 パナソニック株式会社 ドライエッチング装置
JP2013062358A (ja) * 2011-09-13 2013-04-04 Panasonic Corp ドライエッチング装置
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
KR20180112794A (ko) * 2016-01-22 2018-10-12 어플라이드 머티어리얼스, 인코포레이티드 전도성 층들이 매립된 세라믹 샤워헤드
US12074390B2 (en) 2022-11-11 2024-08-27 Tokyo Electron Limited Parallel resonance antenna for radial plasma control

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Also Published As

Publication number Publication date
WO1998044535A1 (en) 1998-10-08
EP0972299B1 (de) 2003-11-26
US6035868A (en) 2000-03-14
JP4472789B2 (ja) 2010-06-02
TW400540B (en) 2000-08-01
JP2001517373A (ja) 2001-10-02
US6155203A (en) 2000-12-05
KR20010005887A (ko) 2001-01-15
KR100535827B1 (ko) 2005-12-12
DE69820041T2 (de) 2004-09-02
EP0972299A1 (de) 2000-01-19
DE69820041D1 (de) 2004-01-08

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