KR100481647B1 - 시료의 분리장치 및 분리방법 - Google Patents

시료의 분리장치 및 분리방법 Download PDF

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Publication number
KR100481647B1
KR100481647B1 KR10-2001-0050925A KR20010050925A KR100481647B1 KR 100481647 B1 KR100481647 B1 KR 100481647B1 KR 20010050925 A KR20010050925 A KR 20010050925A KR 100481647 B1 KR100481647 B1 KR 100481647B1
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KR
South Korea
Prior art keywords
layer
separation
substrate
fluid
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR10-2001-0050925A
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English (en)
Korean (ko)
Other versions
KR20020016547A (ko
Inventor
야나기타가즈타카
사카구치기요후미
Original Assignee
캐논 가부시끼가이샤
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Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20020016547A publication Critical patent/KR20020016547A/ko
Application granted granted Critical
Publication of KR100481647B1 publication Critical patent/KR100481647B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
KR10-2001-0050925A 2000-08-25 2001-08-23 시료의 분리장치 및 분리방법 Expired - Fee Related KR100481647B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00256136 2000-08-25
JP2000256136A JP2002075917A (ja) 2000-08-25 2000-08-25 試料の分離装置及び分離方法

Publications (2)

Publication Number Publication Date
KR20020016547A KR20020016547A (ko) 2002-03-04
KR100481647B1 true KR100481647B1 (ko) 2005-04-08

Family

ID=18744795

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2001-0050925A Expired - Fee Related KR100481647B1 (ko) 2000-08-25 2001-08-23 시료의 분리장치 및 분리방법

Country Status (5)

Country Link
US (2) US6712288B2 (enExample)
EP (1) EP1187182A3 (enExample)
JP (1) JP2002075917A (enExample)
KR (1) KR100481647B1 (enExample)
TW (1) TW527662B (enExample)

Families Citing this family (18)

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US7611928B2 (en) 2002-04-16 2009-11-03 Infineon Technologies Ag Method for producing a substrate
TWI233154B (en) * 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
FR2859312B1 (fr) * 2003-09-02 2006-02-17 Soitec Silicon On Insulator Scellement metallique multifonction
JP2005210062A (ja) * 2003-12-26 2005-08-04 Canon Inc 半導体部材とその製造方法、及び半導体装置
US20080211061A1 (en) * 2004-04-21 2008-09-04 California Institute Of Technology Method For the Fabrication of GaAs/Si and Related Wafer Bonded Virtual Substrates
KR100601976B1 (ko) * 2004-12-08 2006-07-18 삼성전자주식회사 스트레인 실리콘 온 인슐레이터 구조체 및 그 제조방법
FR2888400B1 (fr) 2005-07-08 2007-10-19 Soitec Silicon On Insulator Procede de prelevement de couche
WO2007087371A2 (en) 2006-01-23 2007-08-02 The Board Of Trustees Of The University Of Illinois Polymer microcavity and microchannel devices and fabrication method
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
GB2453886B (en) * 2006-07-26 2011-08-17 Univ Illinois Buried circumferential electrode microcavity plasma device arrays, electrical interconnects, and formation method
US8159134B2 (en) 2007-05-16 2012-04-17 The Board Of Trustees Of The University Of Illinois Arrays of microcavity plasma devices and electrodes with reduced mechanical stress
FR2951581B1 (fr) * 2009-10-19 2011-12-16 Ecole Polytech Procede de fabrication d'un film multicouche comprenant au moins une couche ultra mince de silicium cristallin et dispositifs obtenus par ce procede
FR2967294B1 (fr) * 2010-11-10 2012-12-07 Commissariat Energie Atomique Procédé de formation d'une structure multicouches
US9196503B2 (en) * 2012-08-23 2015-11-24 Michael Xiaoxuan Yang Methods for fabricating devices on semiconductor substrates
KR101803790B1 (ko) 2013-04-18 2017-12-04 한화테크윈 주식회사 웨이퍼의 시닝 방법 및 장치
KR102244025B1 (ko) * 2019-07-22 2021-04-23 국방과학연구소 삭마 시험 장치
JP7362515B2 (ja) * 2020-03-04 2023-10-17 キオクシア株式会社 ウエハ剥離装置及びウエハ剥離方法
JP2025059782A (ja) * 2023-09-29 2025-04-10 芝浦メカトロニクス株式会社 基板分離装置

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EP0886300A2 (en) * 1997-06-16 1998-12-23 Canon Kabushiki Kaisha Apparatus and method of separating sample and substrate fabrication method
KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
EP0989593A2 (en) * 1998-09-25 2000-03-29 Canon Kabushiki Kaisha Substrate separating apparatus and method, and substrate manufacturing method

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JP2608351B2 (ja) 1990-08-03 1997-05-07 キヤノン株式会社 半導体部材及び半導体部材の製造方法
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JPH05206146A (ja) * 1992-01-24 1993-08-13 Toshiba Corp 半導体装置の製造方法
EP0597428B1 (en) 1992-11-09 1997-07-30 Canon Kabushiki Kaisha Anodization apparatus with supporting device for substrate to be treated
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
FR2725074B1 (fr) 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US6107213A (en) 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
JP3381443B2 (ja) 1995-02-02 2003-02-24 ソニー株式会社 基体から半導体層を分離する方法、半導体素子の製造方法およびｓｏｉ基板の製造方法
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JP2877800B2 (ja) 1997-03-27 1999-03-31 キヤノン株式会社 複合部材の分離方法、分離された部材、分離装置、半導体基体の作製方法および半導体基体
CA2290104A1 (en) 1997-05-12 1998-11-19 Silicon Genesis Corporation A controlled cleavage process
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JP4323577B2 (ja) * 1997-12-26 2009-09-02 キヤノン株式会社 分離方法および半導体基板の製造方法
US6540861B2 (en) * 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP3762144B2 (ja) 1998-06-18 2006-04-05 キヤノン株式会社 Ｓｏｉ基板の作製方法
JP2000082679A (ja) 1998-07-08 2000-03-21 Canon Inc 半導体基板とその作製方法
TW522488B (en) 1998-07-27 2003-03-01 Canon Kk Sample processing apparatus and method
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JP2000349266A (ja) 1999-03-26 2000-12-15 Canon Inc 半導体部材の製造方法、半導体基体の利用方法、半導体部材の製造システム、半導体部材の生産管理方法及び堆積膜形成装置の利用方法
JP2001007362A (ja) 1999-06-17 2001-01-12 Canon Inc 半導体基材および太陽電池の製造方法
US6475460B1 (en) * 1999-07-12 2002-11-05 Marine Desalination Systems Llc Desalination and concomitant carbon dioxide capture yielding liquid carbon dioxide
US6497794B1 (en) * 1999-07-12 2002-12-24 Marine Desalination Systems L.L.C. Desalination using positively buoyant or negatively buoyant/assisted buoyancy hydrate
TW587332B (en) 2000-01-07 2004-05-11 Canon Kk Semiconductor substrate and process for its production
US20020045237A1 (en) 2000-03-29 2002-04-18 Gouzel Karimova Bacterial two-hybrid system for protein-protein interaction screening, new strains for use therein, and their applications

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
EP0886300A2 (en) * 1997-06-16 1998-12-23 Canon Kabushiki Kaisha Apparatus and method of separating sample and substrate fabrication method
JPH115064A (ja) * 1997-06-16 1999-01-12 Canon Inc 試料の分離装置及びその方法並びに基板の製造方法
EP0989593A2 (en) * 1998-09-25 2000-03-29 Canon Kabushiki Kaisha Substrate separating apparatus and method, and substrate manufacturing method

Also Published As

Publication number Publication date
US7017830B2 (en) 2006-03-28
JP2002075917A (ja) 2002-03-15
US20040058537A1 (en) 2004-03-25
US20020070291A1 (en) 2002-06-13
KR20020016547A (ko) 2002-03-04
US6712288B2 (en) 2004-03-30
EP1187182A3 (en) 2006-06-14
EP1187182A2 (en) 2002-03-13
TW527662B (en) 2003-04-11

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