KR100415422B1 - 탄화규소단결정을승화성장시키기위한방법및장치 - Google Patents

탄화규소단결정을승화성장시키기위한방법및장치 Download PDF

Info

Publication number
KR100415422B1
KR100415422B1 KR1019970703724A KR19970703724A KR100415422B1 KR 100415422 B1 KR100415422 B1 KR 100415422B1 KR 1019970703724 A KR1019970703724 A KR 1019970703724A KR 19970703724 A KR19970703724 A KR 19970703724A KR 100415422 B1 KR100415422 B1 KR 100415422B1
Authority
KR
South Korea
Prior art keywords
silicon carbide
wall
reaction chamber
sic
sublimation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970703724A
Other languages
English (en)
Korean (ko)
Other versions
KR980700460A (ko
Inventor
디트리히 슈테파니
요하네스 펠클
Original Assignee
지멘스 악티엔게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 지멘스 악티엔게젤샤프트 filed Critical 지멘스 악티엔게젤샤프트
Publication of KR980700460A publication Critical patent/KR980700460A/ko
Application granted granted Critical
Publication of KR100415422B1 publication Critical patent/KR100415422B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019970703724A 1994-12-01 1995-11-14 탄화규소단결정을승화성장시키기위한방법및장치 Expired - Fee Related KR100415422B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEP4442819.7 1994-12-01
DE4442819 1994-12-01

Publications (2)

Publication Number Publication Date
KR980700460A KR980700460A (ko) 1998-03-30
KR100415422B1 true KR100415422B1 (ko) 2004-03-18

Family

ID=6534664

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970703724A Expired - Fee Related KR100415422B1 (ko) 1994-12-01 1995-11-14 탄화규소단결정을승화성장시키기위한방법및장치

Country Status (8)

Country Link
EP (1) EP0795050B1 (enExample)
JP (1) JP3902225B2 (enExample)
KR (1) KR100415422B1 (enExample)
DE (2) DE19581382D2 (enExample)
FI (1) FI972315A7 (enExample)
RU (1) RU2155829C2 (enExample)
TW (1) TW282556B (enExample)
WO (1) WO1996017113A1 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2747401B1 (fr) * 1996-04-10 1998-05-15 Commissariat Energie Atomique Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
JP3725268B2 (ja) * 1996-11-14 2005-12-07 株式会社豊田中央研究所 単結晶の製造方法
ATE509147T1 (de) * 2000-03-13 2011-05-15 Ii Vi Inc Vorrichtung zum axial-gradient-transport und verfahren zur herstellung von grossformatigen siliziumkarbid-einkristallen
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
JP4499698B2 (ja) * 2006-10-04 2010-07-07 昭和電工株式会社 炭化珪素単結晶の製造方法
JP4688108B2 (ja) * 2007-10-26 2011-05-25 株式会社デンソー 種結晶の固定状態の評価方法
WO2013124464A1 (en) * 2012-02-23 2013-08-29 Sgl Carbon Se Cvd coated crucible and use
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
EP3892762A1 (en) 2016-04-28 2021-10-13 Kwansei Gakuin Educational Foundation Vapour-phase epitaxial growth method, and method for producing substrate equipped with epitaxial layer
WO2020095873A1 (ja) * 2018-11-05 2020-05-14 学校法人関西学院 ＳｉＣ半導体基板及びその製造方法及びその製造装置
RU2736814C1 (ru) * 2020-04-03 2020-11-20 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" Способ получения монокристаллического SiC
EP4206367A4 (en) 2021-11-15 2024-01-17 Suzhou Uking Photoelectric Technology Co., Ltd. Synchronous growth method and device for multi-crucible silicon carbide crystal

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
SU1663060A1 (ru) * 1989-04-25 1991-07-15 Vladimir N Rybkin Способ выращивания кристаллов карбида кремния и устройство для его осуществления
JPH04265294A (ja) * 1991-02-19 1992-09-21 Toshiba Corp 半導体結晶の製造方法
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置

Also Published As

Publication number Publication date
DE59506491D1 (de) 1999-09-02
RU2155829C2 (ru) 2000-09-10
FI972315L (fi) 1997-05-30
JPH10509689A (ja) 1998-09-22
FI972315A0 (fi) 1997-05-30
DE19581382D2 (de) 1997-08-21
KR980700460A (ko) 1998-03-30
JP3902225B2 (ja) 2007-04-04
FI972315A7 (fi) 1997-05-30
EP0795050B1 (de) 1999-07-28
EP0795050A1 (de) 1997-09-17
WO1996017113A1 (de) 1996-06-06
TW282556B (enExample) 1996-08-01

Similar Documents

Publication Publication Date Title
KR100415422B1 (ko) 탄화규소단결정을승화성장시키기위한방법및장치
US5989340A (en) Process and device for sublimation growing of silicon carbide monocrystals
US6056820A (en) Advanced physical vapor transport method and apparatus for growing high purity single crystal silicon carbide
TWI770769B (zh) 使用得自聚合物之高純度碳化矽之氣相沉積設備與技術
US5707446A (en) Device for producing SiC single crystals
US7371281B2 (en) Silicon carbide single crystal and method and apparatus for producing the same
US5879462A (en) Device for heat treatment of objects and a method for producing a susceptor
WO2014130108A9 (en) Vanadium doped sic single crystals and method thereof
RU2162117C2 (ru) Способ эпитаксиального выращивания карбида кремния и реактор для его осуществления
US10017877B2 (en) Silicon carbide crystal growth in a CVD reactor using chlorinated chemistry
JP4199921B2 (ja) 炭化珪素単結晶を製造する方法および装置
JPH11508531A (ja) Ｃｖｄによって目的物をエピタキシアル成長させる装置と方法
JP2000302600A (ja) 炭化珪素の単一ポリタイプの大型単結晶を成長させる方法
KR20020059353A (ko) 질화 알루미늄 성장용 에피택셜 성장법 및 이를 위한 성장챔버
TW202202677A (zh) 包含成長坩堝的晶體生長設備及使用成長坩堝的方法
JP2000264795A (ja) 炭化珪素単結晶の製造装置及び炭化珪素単結晶の製造方法
CN108624963A (zh) 一种用于pvt法生长的碳化硅晶体的原料烧结工艺
KR101031407B1 (ko) 단결정 실리콘 탄화물의 형성방법
JPH11199395A (ja) 炭化珪素単結晶の製造方法
JP2001192299A (ja) 炭化珪素単結晶の製造方法及び製造装置
JP4505202B2 (ja) 炭化珪素単結晶の製造方法および製造装置
JP3982022B2 (ja) 単結晶の製造方法及び単結晶製造装置
CN105518191B (zh) 具有低缺陷密度的大块硅碳化物
JP4309509B2 (ja) 熱分解黒鉛からなる単結晶成長用のルツボの製造方法
JP4341457B2 (ja) マイクロ波プラズマｃｖｄ装置およびダイヤモンド膜を成長する方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20111226

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20121226

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20140106

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20140106

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000