TW282556B - - Google Patents

Info

Publication number
TW282556B
TW282556B TW084112224A TW84112224A TW282556B TW 282556 B TW282556 B TW 282556B TW 084112224 A TW084112224 A TW 084112224A TW 84112224 A TW84112224 A TW 84112224A TW 282556 B TW282556 B TW 282556B
Authority
TW
Taiwan
Application number
TW084112224A
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of TW282556B publication Critical patent/TW282556B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
TW084112224A 1994-12-01 1995-11-17 TW282556B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4442819 1994-12-01

Publications (1)

Publication Number Publication Date
TW282556B true TW282556B (zh) 1996-08-01

Family

ID=6534664

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084112224A TW282556B (zh) 1994-12-01 1995-11-17

Country Status (8)

Country Link
EP (1) EP0795050B1 (zh)
JP (1) JP3902225B2 (zh)
KR (1) KR100415422B1 (zh)
DE (2) DE19581382D2 (zh)
FI (1) FI972315A (zh)
RU (1) RU2155829C2 (zh)
TW (1) TW282556B (zh)
WO (1) WO1996017113A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2747401B1 (fr) * 1996-04-10 1998-05-15 Commissariat Energie Atomique Dispositif et procede pour la formation de carbure de silicium (sic) monocristallin sur un germe
JP3725268B2 (ja) * 1996-11-14 2005-12-07 株式会社豊田中央研究所 単結晶の製造方法
EP1268882B1 (en) * 2000-03-13 2011-05-11 II-VI Incorporated Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide
FR2839730B1 (fr) * 2002-05-15 2004-08-27 Centre Nat Rech Scient Formation de carbure de silicium monocristallin
JP4499698B2 (ja) * 2006-10-04 2010-07-07 昭和電工株式会社 炭化珪素単結晶の製造方法
JP4688108B2 (ja) * 2007-10-26 2011-05-25 株式会社デンソー 種結晶の固定状態の評価方法
WO2013124464A1 (en) * 2012-02-23 2013-08-29 Sgl Carbon Se Cvd coated crucible and use
US8860040B2 (en) 2012-09-11 2014-10-14 Dow Corning Corporation High voltage power semiconductor devices on SiC
US9018639B2 (en) 2012-10-26 2015-04-28 Dow Corning Corporation Flat SiC semiconductor substrate
US9017804B2 (en) 2013-02-05 2015-04-28 Dow Corning Corporation Method to reduce dislocations in SiC crystal growth
US9797064B2 (en) 2013-02-05 2017-10-24 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a support shelf which permits thermal expansion
US9738991B2 (en) 2013-02-05 2017-08-22 Dow Corning Corporation Method for growing a SiC crystal by vapor deposition onto a seed crystal provided on a supporting shelf which permits thermal expansion
US8940614B2 (en) 2013-03-15 2015-01-27 Dow Corning Corporation SiC substrate with SiC epitaxial film
US9279192B2 (en) 2014-07-29 2016-03-08 Dow Corning Corporation Method for manufacturing SiC wafer fit for integration with power device manufacturing technology
CN114351248A (zh) 2016-04-28 2022-04-15 学校法人关西学院 气相外延生长方法及带有外延层的基板的制备方法
CN113227466A (zh) * 2018-11-05 2021-08-06 学校法人关西学院 SiC半导体衬底及其制造方法和制造装置
RU2736814C1 (ru) * 2020-04-03 2020-11-20 Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)" Способ получения монокристаллического SiC

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147572A (en) * 1976-10-18 1979-04-03 Vodakov Jury A Method for epitaxial production of semiconductor silicon carbide utilizing a close-space sublimation deposition technique
JPH04265294A (ja) * 1991-02-19 1992-09-21 Toshiba Corp 半導体結晶の製造方法
JPH05208900A (ja) * 1992-01-28 1993-08-20 Nisshin Steel Co Ltd 炭化ケイ素単結晶の成長装置

Also Published As

Publication number Publication date
RU2155829C2 (ru) 2000-09-10
JPH10509689A (ja) 1998-09-22
EP0795050A1 (de) 1997-09-17
KR100415422B1 (ko) 2004-03-18
DE19581382D2 (de) 1997-08-21
JP3902225B2 (ja) 2007-04-04
EP0795050B1 (de) 1999-07-28
FI972315A0 (fi) 1997-05-30
KR980700460A (ko) 1998-03-30
WO1996017113A1 (de) 1996-06-06
FI972315A (fi) 1997-05-30
DE59506491D1 (de) 1999-09-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees