KR100394397B1 - 신뢰성있고 모듈화되고 생성력이 우수한 협대역 KrF엑시머 레이저 - Google Patents
신뢰성있고 모듈화되고 생성력이 우수한 협대역 KrF엑시머 레이저 Download PDFInfo
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- KR100394397B1 KR100394397B1 KR10-2000-7009736A KR20007009736A KR100394397B1 KR 100394397 B1 KR100394397 B1 KR 100394397B1 KR 20007009736 A KR20007009736 A KR 20007009736A KR 100394397 B1 KR100394397 B1 KR 100394397B1
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- 238000004519 manufacturing process Methods 0.000 title abstract description 8
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims abstract description 25
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 15
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Classifications
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
- G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
- G01J9/0246—Measuring optical wavelength
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1398—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a supplementary modulation of the output
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
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- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1392—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a passive reference, e.g. absorption cell
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- Spectroscopy & Molecular Physics (AREA)
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- Spectrometry And Color Measurement (AREA)
Abstract
Description
Claims (16)
- A. (1) 가늘고 긴 두개의 전극;(2) 단일의 예비전리기 튜브;(3) 전체압력을 한정하고, 크립톤, 전체 압력의 0.08보 다 작은 부분압력을 갖는 플루오르, 및 완충가스로 이루어진 레이저 가스;(4) 상기 가늘고 긴 두개의 전극사이의 전기 방전에 의해 생성된 충격 파를 감쇠하도록 위치된 적어도 두개의 음향 배플;을 포함하는 레이저 챔버; 및B. (1) 적어도 하나의 빔 확장 프리즘;(2) 회절격자; 및(3) 회절격자를 튜닝하는 튜닝수단;으로 구성된 라인 협소화 모듈;을 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 챔버는 상류방향을 정의하기 위해 상기 가늘고 긴 두개의 전극 사이의 상기 레이저 가스를 순환시키는 블로워를 또한 포함하고, 상기 단일 예비전리기 튜브는 상기 전극의 상류에 위치된 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 적어도 하나의 프리즘은 플루오르화 칼슘으로 이루어진 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 적어도 하나의 프리즘은 3개의 프리즘이며, 모두가 플루오르화 칼슘으로 이루어진 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 플루오르의 부분압력은 전체 가스 압력의 0.06%보다 작은 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 2 항에 있어서, 가늘고 긴 두개의 전극은 캐소드와 애노드를 정의하고, 상기 애노드는 상기 베어링상의 공기역학적 반작용력을 감소시키도록 위치된 테이퍼 면을 갖는 애노드 지지바에 의해 지지된 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 전극을 통하여 고전압을 공급하는 고전압 전력공급장치를 더 포함하고, 상기 고전압 전력공급장치는,A. (1) 직류 출력을 공급하는 제 1 정류기;(2) 상기 제 1 정류기의 출력을 제 1 교류 전압의 고주파 제 1 교류로 변환하는 인버터;(3) 제 2 교류 전압의 제 2 교류를 공급하도록 상기 인버터의 출력전 압을 증폭하는 스텝 업 트랜스포머;(4) 상기 제 2 교류 전압을 정류하는 제 2 정류기;(5) 적어도 약 1000Hz 주파수의 고전압 펄스를 제공하도록 상기 전력 공급장치를 제어하는 전자 회로를 포함하는 제어 보드;(6) 상기 제 2 정류기의 전압 출력을 검출하고 전압출력신호를 상기 제어보드에 공급하는 전압 검출 회로를 포함하는 전압 피드백 회로;(7) 상기 제 2 정류기로부터 흐르는 충전전류를 검출하고 충전전류신 호를 상기 제어보드에 공급하는 전류 검출 회로를 포함하는 전류 피드 백 회로; 및(8) 커맨드 제어를 상기 제어보드에 공급하는 디지털 커맨드 제어부; 를 포함하고, 미세 디지털 레귤레이션을 가지고 있고 충전 사이클을 한정하는 펄스 전력공급장치; 및B. 상기 펄스 전력공급장치로부터의 출력 전기펄스를 압축 및 증폭하는 자기 스위치;를 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 7 항에 있어서, 상기 전압 피드백 회로는 차동 수단 증폭기를 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 7 항에 있어서, 상기 전류 피드백 회로는 차동 수단 증폭기를 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 7 항에 있어서, 상기 제 2 교류는 공진 주파수를 한정하고, 각 충전 사이클의 끝부분 근처에서 공진 주파수를 감소시키기 위하여 상기 저항기 회로를 통하여 상기 충전 전류를 흐르게 하는 스위치 수단 및 저항기 회로를 더 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 적어도 약 20%의 반사율을 갖는 출력커플러를 더 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 파장계를 더 포함하고, 상기 파장계는 파장의 대략적인 측정을 제공하는 회절격자계 파장 모니터, 및 다이오드 어레이상의 제 1 위치에서 상대적인 파장의 광학표시를 포커싱하도록 정렬된 에탈론계 파장 모니터를 포함하고, 상기 에탈론계 파장 모니터는 상기 제 1 위치와 상이한 상기 다이오드상의 위치에서 광학 파장을 포커싱하도록 정렬된 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 12 항에 있어서, 상기 회절격자계 파장 모니터 및 에탈론계 파장 모니터를 교정하는 원자 기준 유닛을 더 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 충전전압과 펄스 에너지의 변화율(∂E/∂V)을 측정하는 수단, 및 충전전압을 한정하는 고전압 충전 시스템을 포함하는 펄스 전력 시스템을 구비한 상기 레이저로부터 현재의 버스트 펄스(P1,P2... PN... Pk,Pk+1,Pk+2...Pk+N1...P1, P2...PN-1,PN)를 한정하는 펄스의 버스트의 집적 에너지 선량과 펄스 에너지를 제어하는 알고리즘으로 프로그래밍된 컴퓨터 컨트롤러를 더 포함하고, 상기 알고리즘은,(1) 상기 버스트에 있는 적어도 하나의 이전 펄스의 측정된 에너지와 소정의 목표 펄스 에너지 값에 근거하여펄스 에너지 에러(ε)를 각 PN에 대하 여 결정하는 단계;(2) 상기 버스트에 있는 모든 이전 펄스(P1내지 PN1)의 집적된 선량 에러(D) 를 각 PN에 대하여 결정하는 단계; 및(3) i) 상기 ∂E/∂V,ii) 상기 ε,ⅲ) 상기 D,ⅳ) 복수의 이전 버스트에 있는 PN에 대한 특정전압에 근거한 기준 전압, 을 사용하여, 상기 제 1 복수의 펄스에 있는 각각의 상기 펄스(PN)에 대하여, 충전전압(VN)을 결정하는 단계;C. (1) 상기 버스트에 있는 적어도 하나의 이전 펄스의 측정된 에너지와 소 정 목표 펄스 에너지 값에 근거하여 펄스 에너지 에러(ε)를 각 PN에 대하여 결정하고,(2) 상기 버스트에 있는 모든 이전 펄스(P1내지 PN1)의 집적된 선량 에러(D)를 각 PN에 대하여 결정하고,(3) i) 상기 ∂E/∂V,ii) 상기 ε,ⅲ) 상기 D,ⅳ) 복수의 이전 버스트에 있는 PN에 대하여 특정 전압에 근거한 기 준 전압을 사용하여 상기 제 1 복수의 펄스에 있는 상기 각각의 펄스(PN)에 대하여 충전 전압(VN)을 결정하는 알고리즘으로 프로 그래밍된 컴퓨터 프로세서를 사용하여 레이저의 충전 전압을 조 정함으로써 상기 펄스의 버스트의 PK다음에 오는 펄스에 있는 각 펄스(Pk+N)의 펄스 에너지를 제어하는 단계;를 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 블로워로부터 나가고 상기 애노드 지지 수단에 의해 다시 방향설정되는 레이저 가스로부터 생긴 공기역학적 반작용력의 크기를 감소시키는 테이퍼 면을 포함하는 애노드 지지 수단을 더 포함하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
- 제 1 항에 있어서, 상기 플루오르는 전체압력의 약 0.08보다 작은 부분압력을 한정하는 것을 특징으로 하는 초협대역 KrF 엑시머 레이저.
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US09/041,474 | 1998-03-11 | ||
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TW415140B (en) | 2000-12-11 |
KR20010041553A (ko) | 2001-05-25 |
KR20010012447A (ko) | 2001-02-15 |
HK1036365A1 (en) | 2001-12-28 |
JP2000004057A (ja) | 2000-01-07 |
JP3204949B2 (ja) | 2001-09-04 |
DE69939105D1 (de) | 2008-08-28 |
US5978394A (en) | 1999-11-02 |
US5991324A (en) | 1999-11-23 |
KR100614500B1 (ko) | 2006-08-22 |
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