KR100561950B1 - 협대역 엑시머 레이저 - Google Patents
협대역 엑시머 레이저 Download PDFInfo
- Publication number
- KR100561950B1 KR100561950B1 KR1020007003845A KR20007003845A KR100561950B1 KR 100561950 B1 KR100561950 B1 KR 100561950B1 KR 1020007003845 A KR1020007003845 A KR 1020007003845A KR 20007003845 A KR20007003845 A KR 20007003845A KR 100561950 B1 KR100561950 B1 KR 100561950B1
- Authority
- KR
- South Korea
- Prior art keywords
- laser
- excimer laser
- fluorine
- gas
- pulse
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2256—KrF, i.e. krypton fluoride is comprised for lasing around 248 nm
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
Description
플루오르 감소
Claims (10)
- A. 플루오르와 양립가능한 물질로 이루어지고,(1) 가늘고 긴 두개의 전극;(2) 적어도 하나의 예비전리기; 및(3) 전체 압력을 한정하며, 노블 가스, 플루오르, 완충가스, 및 산소로 이루어진 레이저 가스;를 포함하는 레이저 챔버:B. (1) 적어도 하나의 빔 확장 프리즘;(2) 회절격자; 및(3) 회절격자를 튜닝하는 튜닝수단;으로 구성된 라인 협소화 모듈: 및C. 적어도 25%의 반사율을 갖는 출력 커플러:를 포함하며,상기 플루오르는 전체압력의 0.10%보다 낮은 부분압력을 갖는 것을 특징으로 하는 초협대역 엑시머 레이저.
- 삭제
- 삭제
- 제 1 항에 있어서, 상기 노블 가스는 크립톤인 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 1 항에 있어서, 상기 노블 가스는 아르곤인 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 1 항에 있어서, 상기 적어도 하나의 프리즘은 플루오르화 칼슘으로 이루어진 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 1 항에 있어서, 적어도 하나의 프리즘은 3개의 프리즘이며, 모두 플루오르화 칼슘으로 이루어진 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 1 항에 있어서, 플루오르의 부분압력은 전체 가스압력의 0.06%보다 낮은 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 1 항에 있어서, 상기 산소는 2 내지 50 ppm사이의 농도를 갖는 것을 특징으로 하는 초협대역 엑시머 레이저.
- 제 9 항에 있어서, 상기 엑시머 레이저는 ArF 엑시머 레이저이며, 산소의 농도는 5 ppm보다 낮은 것을 특징으로 하는 초협대역 엑시머 레이저.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/947,474 | 1997-10-10 | ||
US08/947,474 US5982800A (en) | 1997-04-23 | 1997-10-10 | Narrow band excimer laser |
US8/947,474 | 1997-10-10 | ||
PCT/US1998/017380 WO1999019951A1 (en) | 1997-10-10 | 1998-08-21 | Narrow band excimer laser |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010031030A KR20010031030A (ko) | 2001-04-16 |
KR100561950B1 true KR100561950B1 (ko) | 2006-03-21 |
Family
ID=26794316
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020007003845A KR100561950B1 (ko) | 1997-10-10 | 1998-08-21 | 협대역 엑시머 레이저 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100561950B1 (ko) |
WO (1) | WO1999019951A1 (ko) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6320892B1 (en) * | 1998-01-30 | 2001-11-20 | Cymer, Inc. | Energy efficient lithography laser |
US6151349A (en) * | 1998-03-04 | 2000-11-21 | Cymer, Inc. | Automatic fluorine control system |
US6381257B1 (en) * | 1999-09-27 | 2002-04-30 | Cymer, Inc. | Very narrow band injection seeded F2 lithography laser |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5835520A (en) * | 1997-04-23 | 1998-11-10 | Cymer, Inc. | Very narrow band KrF laser |
-
1998
- 1998-08-21 WO PCT/US1998/017380 patent/WO1999019951A1/en active IP Right Grant
- 1998-08-21 KR KR1020007003845A patent/KR100561950B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20010031030A (ko) | 2001-04-16 |
WO1999019951A1 (en) | 1999-04-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1021856B1 (en) | Narrow band excimer laser | |
US5982800A (en) | Narrow band excimer laser | |
US5835520A (en) | Very narrow band KrF laser | |
US5856991A (en) | Very narrow band laser | |
US6188710B1 (en) | Narrow band gas discharge laser with gas additive | |
US6330261B1 (en) | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser | |
EP0992092B1 (en) | Very narrow band laser with unstable resonance cavity | |
KR100561950B1 (ko) | 협대역 엑시머 레이저 | |
WO1999060674A1 (en) | RELIABLE MODULAR PRODUCTION QUALITY NARROW-BAND HIGH REP RATE ArF EXCIMER LASER | |
US6671302B2 (en) | Device for self-initiated UV pre-ionization of a repetitively pulsed gas laser | |
Sengupta | Krypton fluoride excimer laser for advanced microlithography | |
EP1060543A4 (en) | RELIABLE MODULAR, NARROW-BANDED EXCIMER-LIGHTING EXCIMER LASER WITH PRODUCTION QUALITY | |
Das et al. | Krypton fluoride excimer laser for advanced microlithography |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130226 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20140225 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150227 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160302 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170303 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180302 Year of fee payment: 13 |
|
EXPY | Expiration of term |