KR100614500B1 - 엑시머 레이저용 파장 시스템 - Google Patents
엑시머 레이저용 파장 시스템 Download PDFInfo
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- KR100614500B1 KR100614500B1 KR1019997010401A KR19997010401A KR100614500B1 KR 100614500 B1 KR100614500 B1 KR 100614500B1 KR 1019997010401 A KR1019997010401 A KR 1019997010401A KR 19997010401 A KR19997010401 A KR 19997010401A KR 100614500 B1 KR100614500 B1 KR 100614500B1
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 27
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 claims description 35
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- 240000003864 Ulex europaeus Species 0.000 description 1
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J9/00—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
- G01J9/02—Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength by interferometric methods
- G01J9/0246—Measuring optical wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1398—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a supplementary modulation of the output
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70041—Production of exposure light, i.e. light sources by pulsed sources, e.g. multiplexing, pulse duration, interval control or intensity control
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70575—Wavelength control, e.g. control of bandwidth, multiple wavelength, selection of wavelength or matching of optical components to wavelength
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/03—Constructional details of gas laser discharge tubes
- H01S3/036—Means for obtaining or maintaining the desired gas pressure within the tube, e.g. by gettering, replenishing; Means for circulating the gas, e.g. for equalising the pressure within the tube
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/097—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser
- H01S3/0971—Processes or apparatus for excitation, e.g. pumping by gas discharge of a gas laser transversely excited
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1055—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length one of the reflectors being constituted by a diffraction grating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/22—Gases
- H01S3/223—Gases the active gas being polyatomic, i.e. containing two or more atoms
- H01S3/225—Gases the active gas being polyatomic, i.e. containing two or more atoms comprising an excimer or exciplex
- H01S3/2251—ArF, i.e. argon fluoride is comprised for lasing around 193 nm
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
- H01S3/1392—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length by using a passive reference, e.g. absorption cell
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Lasers (AREA)
- Spectrometry And Color Measurement (AREA)
Abstract
Description
Claims (13)
- 협대역 레이저에 의해 만들어지는 레이저빔의 파장을 측정하고 제어하는 파장 시스템에 있어서,A. 파장의 증분 변화를 측정하는 웨이브미터;B. 1) 상기 레이저를 위한 원하는 동작 파장에 가까운 흡수선을 가진 증기를 포함하는 증기셀, 및2) 상기 증기셀을 통과하는 빛의 강도를 측정하는 캘리브레이션 광 감지기로 이루어지는,상기 웨이브미터를 캘리브레이션하기 위한 원자 파장 레퍼런스;C. 상기 레이저를 상기 흡수선을 둘러싸는 파장의 범위로 조정하기에 충분한 조정 범위를 갖는 조정 장치;D. 상기 협대역 레이저빔의 부분을 (ⅰ)상기 웨이브미터로 그리고 (ⅱ)상기 증기셀을 통해 상기 캘리브레이션 광 감지기로 동시에 지향되도록 배치된 광학 트레인; 및E. 상기 파장 범위에 걸쳐 상기 캘리브레이션 광 감지기와 상기 웨이브미터로부터 데이타를 수집하고 분석하고, 그러한 분석에 의거해 상기 웨이브미터를 캘리브레이션하는 프로세서를 포함하는 것을 특징으로 하는 파장 시스템.
- 제 1 항에 있어서, 상기 협대역 레이저빔의 펄스 에너지를 측정하는 펄스 에너지 감지기를 더 포함하는 것을 특징으로 하는 파장 시스템.
- 제 1 항에 있어서, 상기 웨이브미터가, 광 다이오드 어레이, 상기 광 다이오드 어레이의 제 1 부분 상에 코어스 파장 표시를 제공하는 회절 격자 서브시스템, 및 상기 광 다이오드 어레이의 제 2 부분 상에 파인 파장 표시를 제공하는 에탈론 서브시스템으로 이루어진 것을 특징으로 하는 파장 시스템.
- 제 1 항에 있어서, 상기 레이저가 ArF 엑시머 레이저이고, 상기 증기가 백금 증기로 이루어진 것을 특징으로 하는 파장 시스템.
- 제 4 항에 있어서, 상기 흡수선이, 193,224.3pm선과 193,436.9pm선으로 이루어진 백금 흡수선들의 군에서 선택된 것을 특징으로 하는 파장 시스템.
- 제 1 항에 있어서, 상기 웨이브미터는 지지 플랜지를 가진 제 1 유리판과 제 2 유리판을 포함하는 에탈론을 포함하는 에탈론 어셈블리를 포함하며, 상기 제 1 유리판이 상기 플랜지에 의해 지지되고 상기 제 2 유리판이 상기 제 1 유리판에 부착된 복수의 얇은 스페이서에 의해 지지되는 것을 특징으로 하는 파장 시스템.
- 제 6 항에 있어서, 상기 플랜지가 지지 구조체 상에 장착된 3개의 패드에 의해 지지되는 것을 특징으로 하는 파장 시스템.
- 제 1 항에 있어서, 상기 조정 장치가 회절 격자를 포함하는 것을 특징으로 하는 파장 시스템.
- 제 8 항에 있어서, 조정 미러를 더 포함하고 있는 것을 특징으로 하는 파장 시스템.
- 제 8 항에 있어서, 상기 회절 격자를 피벗시키는 피벗 수단을 더 포함하고 있는 것을 특징으로 하는 파장 시스템.
- 삭제
- 제 1 항에 있어서, 상기 엑시머 레이저가 F2 엑시머 레이저이고 상기 증기가 브롬 증기를 포함하는 것을 특징으로 하는 파장 시스템.
- 제 12 항에 있어서, 상기 흡수선이 157,639pm에 있는 것을 특징으로 하는 파장 시스템.
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/041,474 | 1998-03-11 | ||
US9/041,474 | 1998-03-11 | ||
US09/041,474 US5991324A (en) | 1998-03-11 | 1998-03-11 | Reliable. modular, production quality narrow-band KRF excimer laser |
US09/165,593 US5978394A (en) | 1998-03-11 | 1998-10-02 | Wavelength system for an excimer laser |
US9/165,593 | 1998-10-02 | ||
US09/165,593 | 1998-10-02 | ||
PCT/US1999/004032 WO1999046836A1 (en) | 1998-03-11 | 1999-02-23 | Wavelength system for an excimer laser |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020067005165A Division KR100674021B1 (ko) | 1998-03-11 | 1999-02-23 | 레이저 시스템 |
Publications (2)
Publication Number | Publication Date |
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KR20010012447A KR20010012447A (ko) | 2001-02-15 |
KR100614500B1 true KR100614500B1 (ko) | 2006-08-22 |
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KR10-2000-7009736A KR100394397B1 (ko) | 1998-03-04 | 1999-02-16 | 신뢰성있고 모듈화되고 생성력이 우수한 협대역 KrF엑시머 레이저 |
KR1019997010401A KR100614500B1 (ko) | 1998-03-11 | 1999-02-23 | 엑시머 레이저용 파장 시스템 |
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US (3) | US5991324A (ko) |
JP (1) | JP3204949B2 (ko) |
KR (2) | KR100394397B1 (ko) |
DE (1) | DE69939105D1 (ko) |
HK (1) | HK1036365A1 (ko) |
TW (1) | TW415140B (ko) |
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US5780843A (en) * | 1996-07-16 | 1998-07-14 | Universite Laval | Absolute optical frequency calibrator for a variable frequency optical source |
US5856911A (en) * | 1996-11-12 | 1999-01-05 | National Semiconductor Corporation | Attachment assembly for integrated circuits |
US5771258A (en) * | 1997-02-11 | 1998-06-23 | Cymer, Inc. | Aerodynamic chamber design for high pulse repetition rate excimer lasers |
US5835520A (en) * | 1997-04-23 | 1998-11-10 | Cymer, Inc. | Very narrow band KrF laser |
US6330261B1 (en) * | 1997-07-18 | 2001-12-11 | Cymer, Inc. | Reliable, modular, production quality narrow-band high rep rate ArF excimer laser |
-
1998
- 1998-03-11 US US09/041,474 patent/US5991324A/en not_active Expired - Lifetime
- 1998-10-02 US US09/165,593 patent/US5978394A/en not_active Expired - Lifetime
-
1999
- 1999-02-16 KR KR10-2000-7009736A patent/KR100394397B1/ko active IP Right Grant
- 1999-02-16 DE DE69939105T patent/DE69939105D1/de not_active Expired - Lifetime
- 1999-02-23 KR KR1019997010401A patent/KR100614500B1/ko active IP Right Grant
- 1999-03-10 TW TW088103668A patent/TW415140B/zh not_active IP Right Cessation
- 1999-03-11 JP JP10840499A patent/JP3204949B2/ja not_active Expired - Lifetime
- 1999-11-30 US US09/451,750 patent/US6553049B1/en not_active Expired - Lifetime
-
2001
- 2001-06-19 HK HK01104248.1A patent/HK1036365A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
HK1036365A1 (en) | 2001-12-28 |
JP3204949B2 (ja) | 2001-09-04 |
TW415140B (en) | 2000-12-11 |
US6553049B1 (en) | 2003-04-22 |
JP2000004057A (ja) | 2000-01-07 |
US5978394A (en) | 1999-11-02 |
KR100394397B1 (ko) | 2003-08-09 |
DE69939105D1 (de) | 2008-08-28 |
US5991324A (en) | 1999-11-23 |
KR20010041553A (ko) | 2001-05-25 |
KR20010012447A (ko) | 2001-02-15 |
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