KR100373971B1 - 마이크로파플라즈마처리방법 - Google Patents

마이크로파플라즈마처리방법 Download PDF

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Publication number
KR100373971B1
KR100373971B1 KR1019950016336A KR19950016336A KR100373971B1 KR 100373971 B1 KR100373971 B1 KR 100373971B1 KR 1019950016336 A KR1019950016336 A KR 1019950016336A KR 19950016336 A KR19950016336 A KR 19950016336A KR 100373971 B1 KR100373971 B1 KR 100373971B1
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KR
South Korea
Prior art keywords
plasma
magnetic field
film
workpiece
microwave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019950016336A
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English (en)
Korean (ko)
Other versions
KR960002630A (ko
Inventor
와따나베가쯔야
사또다까시
하이까따에리
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
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Publication of KR960002630A publication Critical patent/KR960002630A/ko
Application granted granted Critical
Publication of KR100373971B1 publication Critical patent/KR100373971B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
KR1019950016336A 1994-06-20 1995-06-20 마이크로파플라즈마처리방법 Expired - Lifetime KR100373971B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-136895 1994-06-20
JP13689594A JP3199957B2 (ja) 1994-06-20 1994-06-20 マイクロ波プラズマ処理方法

Publications (2)

Publication Number Publication Date
KR960002630A KR960002630A (ko) 1996-01-26
KR100373971B1 true KR100373971B1 (ko) 2003-05-09

Family

ID=15186073

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016336A Expired - Lifetime KR100373971B1 (ko) 1994-06-20 1995-06-20 마이크로파플라즈마처리방법

Country Status (5)

Country Link
US (3) US5925265A (enExample)
EP (1) EP0689227A3 (enExample)
JP (1) JP3199957B2 (enExample)
KR (1) KR100373971B1 (enExample)
TW (1) TW274678B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3217274B2 (ja) * 1996-09-02 2001-10-09 株式会社日立製作所 表面波プラズマ処理装置
JPH1167738A (ja) * 1997-08-18 1999-03-09 Oki Electric Ind Co Ltd アッシング方法および装置
JPH11162958A (ja) * 1997-09-16 1999-06-18 Tokyo Electron Ltd プラズマ処理装置及びその方法
JP3188953B2 (ja) * 1999-10-13 2001-07-16 経済産業省産業技術総合研究所長 パワーアシスト装置およびその制御方法
KR100749978B1 (ko) * 2001-02-23 2007-08-16 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US7033514B2 (en) * 2001-08-27 2006-04-25 Micron Technology, Inc. Method and apparatus for micromachining using a magnetic field and plasma etching
KR100433006B1 (ko) * 2001-10-08 2004-05-28 주식회사 플라즈마트 다기능 플라즈마 발생장치
KR100455350B1 (ko) * 2002-02-08 2004-11-06 권광호 유도 결합형 플라즈마 발생 장치 및 방법
KR100665839B1 (ko) * 2004-12-03 2007-01-09 삼성전자주식회사 플라즈마 처리장치
ITGE20050022A1 (it) * 2005-03-23 2006-09-24 Elkins Anstalt Procedimento ed apparato per la neutralizzazione della carica batterica nei rifiuti solidi ospedalieri od altri prodotti opportunamente triturati, umidificati e caricati in appositi contenitori di sterilizzazione.
KR100735025B1 (ko) * 2006-02-15 2007-07-03 삼성전자주식회사 포토레지스트 리플로우 장치 및 방법
JP4551351B2 (ja) * 2006-04-18 2010-09-29 株式会社デンソー スロットル弁装置
JP2014157758A (ja) * 2013-02-18 2014-08-28 Sumitomo Heavy Ind Ltd マイクロ波イオン源及びその起動方法
KR101446632B1 (ko) * 2013-06-24 2014-10-06 피에스케이 주식회사 기판 처리 장치 및 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266154A (en) * 1991-04-26 1993-11-30 Sony Corporation Dry etching method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154620A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd マイクロ波プラズマ処理方法及び装置
KR930004115B1 (ko) * 1988-10-31 1993-05-20 후지쓰 가부시끼가이샤 애싱(ashing)처리방법 및 장치
JP2546405B2 (ja) * 1990-03-12 1996-10-23 富士電機株式会社 プラズマ処理装置ならびにその運転方法
JP2581255B2 (ja) * 1990-04-02 1997-02-12 富士電機株式会社 プラズマ処理方法
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
JP2501948B2 (ja) * 1990-10-26 1996-05-29 三菱電機株式会社 プラズマ処理方法及びプラズマ処理装置
US5188717A (en) * 1991-09-12 1993-02-23 Novellus Systems, Inc. Sweeping method and magnet track apparatus for magnetron sputtering
US5306985A (en) * 1992-07-17 1994-04-26 Sematech, Inc. ECR apparatus with magnetic coil for plasma refractive index control
JPH06192830A (ja) * 1992-07-31 1994-07-12 Texas Instr Inc <Ti> 材料層の物理的蒸気沈着のための方法と装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5266154A (en) * 1991-04-26 1993-11-30 Sony Corporation Dry etching method

Also Published As

Publication number Publication date
JPH088229A (ja) 1996-01-12
JP3199957B2 (ja) 2001-08-20
KR960002630A (ko) 1996-01-26
TW274678B (enExample) 1996-04-21
US6194680B1 (en) 2001-02-27
EP0689227A2 (en) 1995-12-27
US6005217A (en) 1999-12-21
EP0689227A3 (en) 1996-09-25
US5925265A (en) 1999-07-20

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