KR100358588B1 - 연마제및연마방법 - Google Patents

연마제및연마방법 Download PDF

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Publication number
KR100358588B1
KR100358588B1 KR1019950032050A KR19950032050A KR100358588B1 KR 100358588 B1 KR100358588 B1 KR 100358588B1 KR 1019950032050 A KR1019950032050 A KR 1019950032050A KR 19950032050 A KR19950032050 A KR 19950032050A KR 100358588 B1 KR100358588 B1 KR 100358588B1
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KR
South Korea
Prior art keywords
polishing
cerium oxide
insulating film
less
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019950032050A
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English (en)
Korean (ko)
Inventor
혼마요시오
구스까와기꾸오
모리야마시게오
나가사와마사유끼
Original Assignee
가부시끼가이샤 히다치 세이사꾸쇼
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Publication of KR100358588B1 publication Critical patent/KR100358588B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1019950032050A 1994-09-30 1995-09-27 연마제및연마방법 Expired - Fee Related KR100358588B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-236445 1994-09-30
JP23644594 1994-09-30

Publications (1)

Publication Number Publication Date
KR100358588B1 true KR100358588B1 (ko) 2003-02-14

Family

ID=17000861

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032050A Expired - Fee Related KR100358588B1 (ko) 1994-09-30 1995-09-27 연마제및연마방법

Country Status (3)

Country Link
US (4) US5772780A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR100358588B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW274625B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
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WO2014171766A1 (ko) * 2013-04-17 2014-10-23 제일모직 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
US10723916B2 (en) 2013-04-17 2020-07-28 Samsung Sdi Co., Ltd. Organic film CMP slurry composition and polishing method using same

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KR101060983B1 (ko) * 2002-12-03 2011-08-31 가부시키가이샤 니콘 오염 물질 제거 방법 및 장치, 그리고 노광 방법 및 장치
JP2004228519A (ja) * 2003-01-27 2004-08-12 Elpida Memory Inc 半導体装置、及びその製造方法
KR100532427B1 (ko) * 2003-03-27 2005-11-30 삼성전자주식회사 강유전체 메모리 소자의 제조 방법
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
US20050028450A1 (en) * 2003-08-07 2005-02-10 Wen-Qing Xu CMP slurry
CN101885959B (zh) * 2003-09-12 2012-06-13 日立化成工业株式会社 铈系研磨剂
US7129151B2 (en) * 2003-11-04 2006-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. Planarizing method employing hydrogenated silicon nitride planarizing stop layer
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
TWI334882B (en) * 2004-03-12 2010-12-21 K C Tech Co Ltd Polishing slurry and method of producing same
KR100599329B1 (ko) * 2004-05-11 2006-07-14 주식회사 케이씨텍 연마용 슬러리 및 기판 연마 방법
TWI283008B (en) * 2004-05-11 2007-06-21 K C Tech Co Ltd Slurry for CMP and method of producing the same
TWI273632B (en) * 2004-07-28 2007-02-11 K C Tech Co Ltd Polishing slurry, method of producing same, and method of polishing substrate
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060088976A1 (en) * 2004-10-22 2006-04-27 Applied Materials, Inc. Methods and compositions for chemical mechanical polishing substrates
US7504044B2 (en) 2004-11-05 2009-03-17 Cabot Microelectronics Corporation Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
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TWI323741B (en) * 2004-12-16 2010-04-21 K C Tech Co Ltd Abrasive particles, polishing slurry, and producing method thereof
US7208325B2 (en) * 2005-01-18 2007-04-24 Applied Materials, Inc. Refreshing wafers having low-k dielectric materials
KR100641348B1 (ko) * 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
WO2009021524A1 (en) * 2007-08-14 2009-02-19 Scf Technologies A/S Method and compositions for producing optically clear photocatalytic coatings
US20090047870A1 (en) * 2007-08-16 2009-02-19 Dupont Air Products Nanomaterials Llc Reverse Shallow Trench Isolation Process
CN102165564B (zh) 2008-09-26 2014-10-01 罗地亚管理公司 用于化学机械抛光的磨料组合物及其使用方法
KR102340528B1 (ko) * 2016-06-06 2021-12-20 후지필름 가부시키가이샤 연마액, 화학적 기계적 연마 방법
US10134589B2 (en) 2016-06-24 2018-11-20 QROMIS, Inc. Polycrystalline ceramic substrate and method of manufacture
WO2022164837A1 (en) 2021-01-26 2022-08-04 Cmc Materials, Inc. Composition and method for polishing boron doped polysilicon

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014171766A1 (ko) * 2013-04-17 2014-10-23 제일모직 주식회사 유기막 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법
US10723916B2 (en) 2013-04-17 2020-07-28 Samsung Sdi Co., Ltd. Organic film CMP slurry composition and polishing method using same

Also Published As

Publication number Publication date
US5772780A (en) 1998-06-30
US7026245B2 (en) 2006-04-11
US20030203634A1 (en) 2003-10-30
TW274625B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1996-04-21
US20020068452A1 (en) 2002-06-06
US6043155A (en) 2000-03-28

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