KR100337263B1 - 반도체디바이스및반도체표면결합방법 - Google Patents

반도체디바이스및반도체표면결합방법 Download PDF

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Publication number
KR100337263B1
KR100337263B1 KR1019950000679A KR19950000679A KR100337263B1 KR 100337263 B1 KR100337263 B1 KR 100337263B1 KR 1019950000679 A KR1019950000679 A KR 1019950000679A KR 19950000679 A KR19950000679 A KR 19950000679A KR 100337263 B1 KR100337263 B1 KR 100337263B1
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KR
South Korea
Prior art keywords
semiconductor
wafer
wafers
value
semiconductor surfaces
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019950000679A
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English (en)
Korean (ko)
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KR950034485A (ko
Inventor
프레드에이.키쉬2세
데이비드에이.반데어바터
Original Assignee
루미리즈 라이팅 유에스 엘엘씨
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Publication of KR950034485A publication Critical patent/KR950034485A/ko
Application granted granted Critical
Publication of KR100337263B1 publication Critical patent/KR100337263B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H10P10/128—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates by direct semiconductor to semiconductor bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers

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  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
KR1019950000679A 1994-01-18 1995-01-17 반도체디바이스및반도체표면결합방법 Expired - Lifetime KR100337263B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18345794A 1994-01-18 1994-01-18
US8/183,457 1994-01-18
US08/183,457 1994-01-18

Publications (2)

Publication Number Publication Date
KR950034485A KR950034485A (ko) 1995-12-28
KR100337263B1 true KR100337263B1 (ko) 2002-11-20

Family

ID=22672868

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950000679A Expired - Lifetime KR100337263B1 (ko) 1994-01-18 1995-01-17 반도체디바이스및반도체표면결합방법

Country Status (6)

Country Link
US (1) US5661316A (enExample)
EP (1) EP0664557B1 (enExample)
JP (1) JP4008048B2 (enExample)
KR (1) KR100337263B1 (enExample)
DE (1) DE69433951T2 (enExample)
TW (1) TW289837B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220112193A (ko) * 2021-02-03 2022-08-10 가부시키가이샤 덴소 반도체 디바이스의 제조 방법

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KR0165467B1 (ko) * 1995-10-31 1999-02-01 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법
US6784463B2 (en) * 1997-06-03 2004-08-31 Lumileds Lighting U.S., Llc III-Phospide and III-Arsenide flip chip light-emitting devices
US6054369A (en) * 1997-06-30 2000-04-25 Intersil Corporation Lifetime control for semiconductor devices
DE69835216T2 (de) 1997-07-25 2007-05-31 Nichia Corp., Anan Halbleitervorrichtung aus einer nitridverbindung
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
US6171972B1 (en) 1998-03-17 2001-01-09 Rosemount Aerospace Inc. Fracture-resistant micromachined devices
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
KR100683877B1 (ko) 1999-03-04 2007-02-15 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 레이저소자
US6355541B1 (en) * 1999-04-21 2002-03-12 Lockheed Martin Energy Research Corporation Method for transfer of thin-film of silicon carbide via implantation and wafer bonding
TW502458B (en) * 1999-06-09 2002-09-11 Toshiba Corp Bonding type semiconductor substrate, semiconductor light emission element and manufacturing method thereof
US6333208B1 (en) 1999-07-13 2001-12-25 Li Chiung-Tung Robust manufacturing method for making a III-V compound semiconductor device by misaligned wafer bonding
US6500694B1 (en) 2000-03-22 2002-12-31 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
US6902987B1 (en) 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
JP2002141556A (ja) 2000-09-12 2002-05-17 Lumileds Lighting Us Llc 改良された光抽出効果を有する発光ダイオード
US7053419B1 (en) 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US6525335B1 (en) 2000-11-06 2003-02-25 Lumileds Lighting, U.S., Llc Light emitting semiconductor devices including wafer bonded heterostructures
FR2819099B1 (fr) * 2000-12-28 2003-09-26 Commissariat Energie Atomique Procede de realisation d'une structure empilee
JP2002250826A (ja) * 2001-02-22 2002-09-06 Nec Corp チップ、チップの製造方法およびチップ収容モジュール
US6987613B2 (en) * 2001-03-30 2006-01-17 Lumileds Lighting U.S., Llc Forming an optical element on the surface of a light emitting device for improved light extraction
US7238622B2 (en) * 2001-04-17 2007-07-03 California Institute Of Technology Wafer bonded virtual substrate and method for forming the same
US6440820B1 (en) 2001-05-21 2002-08-27 Hewlett Packard Company Process flow for ARS mover using selenidation wafer bonding after processing a media side of a rotor wafer
US6436794B1 (en) 2001-05-21 2002-08-20 Hewlett-Packard Company Process flow for ARS mover using selenidation wafer bonding before processing a media side of a rotor wafer
JP4947248B2 (ja) * 2001-09-14 2012-06-06 Ｄｏｗａエレクトロニクス株式会社 ノッチ付き化合物半導体ウエハ
WO2003097552A1 (en) 2002-04-30 2003-11-27 Agency For Science Technology And Research A method of wafer/substrate bonding
US7259466B2 (en) 2002-12-17 2007-08-21 Finisar Corporation Low temperature bonding of multilayer substrates
US7361593B2 (en) 2002-12-17 2008-04-22 Finisar Corporation Methods of forming vias in multilayer substrates
FR2850487B1 (fr) * 2002-12-24 2005-12-09 Commissariat Energie Atomique Procede de realisation de substrats mixtes et structure ainsi obtenue
US7175707B2 (en) * 2003-03-24 2007-02-13 Hitachi Cable Ltd. P-type GaAs single crystal and its production method
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
US7009213B2 (en) 2003-07-31 2006-03-07 Lumileds Lighting U.S., Llc Light emitting devices with improved light extraction efficiency
FR2864336B1 (fr) 2003-12-23 2006-04-28 Commissariat Energie Atomique Procede de scellement de deux plaques avec formation d'un contact ohmique entre celles-ci
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
US20060091412A1 (en) * 2004-10-29 2006-05-04 Wheatley John A Polarized LED
US7419839B2 (en) 2004-11-12 2008-09-02 Philips Lumileds Lighting Company, Llc Bonding an optical element to a light emitting device
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7341878B2 (en) * 2005-03-14 2008-03-11 Philips Lumileds Lighting Company, Llc Wavelength-converted semiconductor light emitting device
US8748923B2 (en) * 2005-03-14 2014-06-10 Philips Lumileds Lighting Company Llc Wavelength-converted semiconductor light emitting device
US7804100B2 (en) * 2005-03-14 2010-09-28 Philips Lumileds Lighting Company, Llc Polarization-reversed III-nitride light emitting device
FR2895571B1 (fr) * 2005-12-28 2008-04-18 Commissariat Energie Atomique Procede de realisation d'une jonction pn electroluminescente en materiau semi-conducteur par collage moleculaire
JP4952883B2 (ja) * 2006-01-17 2012-06-13 ソニー株式会社 半導体発光素子
US7642197B2 (en) * 2007-07-09 2010-01-05 Texas Instruments Incorporated Method to improve performance of secondary active components in an esige CMOS technology
TWI362769B (en) 2008-05-09 2012-04-21 Univ Nat Chiao Tung Light emitting device and fabrication method therefor
FR2937797B1 (fr) * 2008-10-28 2010-12-24 S O I Tec Silicon On Insulator Tech Procede de fabrication et de traitement d'une structure de type semi-conducteur sur isolant, permettant de deplacer des dislocations, et structure correspondante
US9004050B2 (en) 2012-04-19 2015-04-14 Ford Global Technologies, Llc Gaseous fuel rail sensor diagnostics
US9482176B2 (en) 2012-06-13 2016-11-01 Ford Global Technologies, Llc System and method for compensating gaseous fuel injection
US10381508B2 (en) 2014-11-19 2019-08-13 National Sun Yat-Sen University Light emitting element with an enhanced electroluminescence effect
TWI560905B (en) * 2014-11-19 2016-12-01 Univ Nat Sun Yat Sen A light emitting element and manufacturing method thereof
CN116529867A (zh) 2020-10-29 2023-08-01 美商艾德亚半导体接合科技有限公司 直接接合方法和结构

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JPH0770474B2 (ja) * 1985-02-08 1995-07-31 株式会社東芝 化合物半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220112193A (ko) * 2021-02-03 2022-08-10 가부시키가이샤 덴소 반도체 디바이스의 제조 방법
KR102861367B1 (ko) 2021-02-03 2025-09-18 가부시키가이샤 덴소 반도체 디바이스의 제조 방법

Also Published As

Publication number Publication date
TW289837B (enExample) 1996-11-01
US5661316A (en) 1997-08-26
DE69433951T2 (de) 2005-09-08
EP0664557B1 (en) 2004-08-18
EP0664557A2 (en) 1995-07-26
KR950034485A (ko) 1995-12-28
JP4008048B2 (ja) 2007-11-14
EP0664557A3 (en) 1996-08-07
JPH07221023A (ja) 1995-08-18
DE69433951D1 (de) 2004-09-23

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