KR100311059B1 - 반도체집적회로제조방법 - Google Patents

반도체집적회로제조방법 Download PDF

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Publication number
KR100311059B1
KR100311059B1 KR1019940001235A KR19940001235A KR100311059B1 KR 100311059 B1 KR100311059 B1 KR 100311059B1 KR 1019940001235 A KR1019940001235 A KR 1019940001235A KR 19940001235 A KR19940001235 A KR 19940001235A KR 100311059 B1 KR100311059 B1 KR 100311059B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
patterned
edge
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940001235A
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English (en)
Korean (ko)
Inventor
쿠오화리
첸화더글라스유
Original Assignee
엘리 웨이스 , 알 비 레비
에이티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘리 웨이스 , 알 비 레비, 에이티 앤드 티 코포레이션 filed Critical 엘리 웨이스 , 알 비 레비
Application granted granted Critical
Publication of KR100311059B1 publication Critical patent/KR100311059B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
    • H10W20/066—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying by forming silicides of refractory metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0112—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors using conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0111—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors
    • H10D64/0113—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group IV semiconductors the conductive layers comprising highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers

Landscapes

  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019940001235A 1993-01-26 1994-01-25 반도체집적회로제조방법 Expired - Lifetime KR100311059B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98721393A 1993-01-26 1993-01-26
US987213 1993-01-26

Publications (1)

Publication Number Publication Date
KR100311059B1 true KR100311059B1 (ko) 2001-12-15

Family

ID=25533110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940001235A Expired - Lifetime KR100311059B1 (ko) 1993-01-26 1994-01-25 반도체집적회로제조방법

Country Status (7)

Country Link
US (1) US5654240A (enExample)
EP (1) EP0609014B1 (enExample)
JP (1) JPH06318682A (enExample)
KR (1) KR100311059B1 (enExample)
DE (1) DE69413861T2 (enExample)
ES (1) ES2122158T3 (enExample)
TW (1) TW230266B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843815A (en) * 1997-01-15 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region
US6063676A (en) * 1997-06-09 2000-05-16 Integrated Device Technology, Inc. Mosfet with raised source and drain regions
US6562724B1 (en) * 1997-06-09 2003-05-13 Texas Instruments Incorporated Self-aligned stack formation
US6043129A (en) * 1997-06-09 2000-03-28 Integrated Device Technology, Inc. High density MOSFET with raised source and drain regions
US5949143A (en) * 1998-01-22 1999-09-07 Advanced Micro Devices, Inc. Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process
US6103455A (en) * 1998-05-07 2000-08-15 Taiwan Semiconductor Manufacturing Company Method to form a recess free deep contact
US6117754A (en) * 1998-05-11 2000-09-12 Texas Instruments - Acer Incorporated Trench free process for SRAM with buried contact structure
US6019906A (en) * 1998-05-29 2000-02-01 Taiwan Semiconductor Manufacturing Company Hard masking method for forming patterned oxygen containing plasma etchable layer
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6492276B1 (en) 1998-05-29 2002-12-10 Taiwan Semiconductor Manufacturing Company Hard masking method for forming residue free oxygen containing plasma etched layer
US6165898A (en) * 1998-10-23 2000-12-26 Taiwan Semiconductor Manufacturing Company Dual damascene patterned conductor layer formation method without etch stop layer
US6429124B1 (en) * 1999-04-14 2002-08-06 Micron Technology, Inc. Local interconnect structures for integrated circuits and methods for making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179239A (ja) * 1990-11-14 1992-06-25 Sony Corp 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
NL186352C (nl) * 1980-08-27 1990-11-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
EP0349022A3 (en) * 1985-01-30 1991-07-24 Kabushiki Kaisha Toshiba Semiconductor device
US4994402A (en) * 1987-06-26 1991-02-19 Hewlett-Packard Company Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device
KR900008868B1 (ko) * 1987-09-30 1990-12-11 삼성전자 주식회사 저항성 접촉을 갖는 반도체 장치의 제조방법
US5210048A (en) * 1988-10-19 1993-05-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor and method for manufacturing the same
US5110753A (en) * 1988-11-10 1992-05-05 Texas Instruments Incorporated Cross-point contact-free floating-gate memory array with silicided buried bitlines
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US4978637A (en) * 1989-05-31 1990-12-18 Sgs-Thomson Microelectronics, Inc. Local interconnect process for integrated circuits
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
FR2677481B1 (fr) * 1991-06-07 1993-08-20 Commissariat Energie Atomique Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue.
US5149665A (en) * 1991-07-10 1992-09-22 Micron Technology, Inc. Conductive source line for high density programmable read-only memory applications
US5270240A (en) * 1991-07-10 1993-12-14 Micron Semiconductor, Inc. Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
KR940010315B1 (ko) * 1991-10-10 1994-10-22 금성 일렉트론 주식회사 반도체 소자의 미세 패턴 형성 방법
US5246883A (en) * 1992-02-06 1993-09-21 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179239A (ja) * 1990-11-14 1992-06-25 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
DE69413861T2 (de) 1999-04-22
EP0609014A3 (en) 1995-01-04
US5654240A (en) 1997-08-05
DE69413861D1 (de) 1998-11-19
ES2122158T3 (es) 1998-12-16
TW230266B (enExample) 1994-09-11
EP0609014A2 (en) 1994-08-03
EP0609014B1 (en) 1998-10-14
JPH06318682A (ja) 1994-11-15

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