KR100311059B1 - 반도체집적회로제조방법 - Google Patents

반도체집적회로제조방법 Download PDF

Info

Publication number
KR100311059B1
KR100311059B1 KR1019940001235A KR19940001235A KR100311059B1 KR 100311059 B1 KR100311059 B1 KR 100311059B1 KR 1019940001235 A KR1019940001235 A KR 1019940001235A KR 19940001235 A KR19940001235 A KR 19940001235A KR 100311059 B1 KR100311059 B1 KR 100311059B1
Authority
KR
South Korea
Prior art keywords
layer
substrate
patterned
edge
conductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019940001235A
Other languages
English (en)
Korean (ko)
Inventor
쿠오화리
첸화더글라스유
Original Assignee
엘리 웨이스 , 알 비 레비
에이티 앤드 티 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘리 웨이스 , 알 비 레비, 에이티 앤드 티 코포레이션 filed Critical 엘리 웨이스 , 알 비 레비
Application granted granted Critical
Publication of KR100311059B1 publication Critical patent/KR100311059B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019940001235A 1993-01-26 1994-01-25 반도체집적회로제조방법 Expired - Lifetime KR100311059B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US98721393A 1993-01-26 1993-01-26
US987213 1993-01-26

Publications (1)

Publication Number Publication Date
KR100311059B1 true KR100311059B1 (ko) 2001-12-15

Family

ID=25533110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940001235A Expired - Lifetime KR100311059B1 (ko) 1993-01-26 1994-01-25 반도체집적회로제조방법

Country Status (7)

Country Link
US (1) US5654240A (enExample)
EP (1) EP0609014B1 (enExample)
JP (1) JPH06318682A (enExample)
KR (1) KR100311059B1 (enExample)
DE (1) DE69413861T2 (enExample)
ES (1) ES2122158T3 (enExample)
TW (1) TW230266B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843815A (en) * 1997-01-15 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region
US6562724B1 (en) * 1997-06-09 2003-05-13 Texas Instruments Incorporated Self-aligned stack formation
US6043129A (en) * 1997-06-09 2000-03-28 Integrated Device Technology, Inc. High density MOSFET with raised source and drain regions
US6063676A (en) * 1997-06-09 2000-05-16 Integrated Device Technology, Inc. Mosfet with raised source and drain regions
US5949143A (en) * 1998-01-22 1999-09-07 Advanced Micro Devices, Inc. Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process
US6103455A (en) * 1998-05-07 2000-08-15 Taiwan Semiconductor Manufacturing Company Method to form a recess free deep contact
US6117754A (en) * 1998-05-11 2000-09-12 Texas Instruments - Acer Incorporated Trench free process for SRAM with buried contact structure
US6019906A (en) * 1998-05-29 2000-02-01 Taiwan Semiconductor Manufacturing Company Hard masking method for forming patterned oxygen containing plasma etchable layer
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6492276B1 (en) 1998-05-29 2002-12-10 Taiwan Semiconductor Manufacturing Company Hard masking method for forming residue free oxygen containing plasma etched layer
US6165898A (en) * 1998-10-23 2000-12-26 Taiwan Semiconductor Manufacturing Company Dual damascene patterned conductor layer formation method without etch stop layer
US6429124B1 (en) 1999-04-14 2002-08-06 Micron Technology, Inc. Local interconnect structures for integrated circuits and methods for making the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179239A (ja) * 1990-11-14 1992-06-25 Sony Corp 半導体装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
NL186352C (nl) * 1980-08-27 1990-11-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
EP0349022A3 (en) * 1985-01-30 1991-07-24 Kabushiki Kaisha Toshiba Semiconductor device
US4994402A (en) * 1987-06-26 1991-02-19 Hewlett-Packard Company Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device
KR900008868B1 (ko) * 1987-09-30 1990-12-11 삼성전자 주식회사 저항성 접촉을 갖는 반도체 장치의 제조방법
US5210048A (en) * 1988-10-19 1993-05-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor and method for manufacturing the same
US5110753A (en) * 1988-11-10 1992-05-05 Texas Instruments Incorporated Cross-point contact-free floating-gate memory array with silicided buried bitlines
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US4978637A (en) * 1989-05-31 1990-12-18 Sgs-Thomson Microelectronics, Inc. Local interconnect process for integrated circuits
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
FR2677481B1 (fr) * 1991-06-07 1993-08-20 Commissariat Energie Atomique Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue.
US5270240A (en) * 1991-07-10 1993-12-14 Micron Semiconductor, Inc. Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
US5149665A (en) * 1991-07-10 1992-09-22 Micron Technology, Inc. Conductive source line for high density programmable read-only memory applications
KR940010315B1 (ko) * 1991-10-10 1994-10-22 금성 일렉트론 주식회사 반도체 소자의 미세 패턴 형성 방법
US5246883A (en) * 1992-02-06 1993-09-21 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure and method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04179239A (ja) * 1990-11-14 1992-06-25 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH06318682A (ja) 1994-11-15
EP0609014B1 (en) 1998-10-14
TW230266B (enExample) 1994-09-11
US5654240A (en) 1997-08-05
EP0609014A3 (en) 1995-01-04
DE69413861D1 (de) 1998-11-19
EP0609014A2 (en) 1994-08-03
DE69413861T2 (de) 1999-04-22
ES2122158T3 (es) 1998-12-16

Similar Documents

Publication Publication Date Title
US4295924A (en) Method for providing self-aligned conductor in a V-groove device
US5688704A (en) Integrated circuit fabrication
KR100278273B1 (ko) 반도체장치의콘택홀형성방법
KR100311059B1 (ko) 반도체집적회로제조방법
US5362668A (en) Method of fabricating an BPSG-filled trend and oxidation isolation structure with a gate electrode
US4398964A (en) Method of forming ion implants self-aligned with a cut
US6368936B1 (en) Method for forming a semiconductor integrated circuit
JPH09139495A (ja) 半導体装置およびその製造方法
US4697328A (en) Method of making hardened NMOS sub-micron field effect transistors
US4219925A (en) Method of manufacturing a device in a silicon wafer
US6143595A (en) Method for forming buried contact
US6159850A (en) Method for reducing resistance of contact window
KR100273320B1 (ko) 반도체소자의 실리사이드 형성방법_
KR0129984B1 (ko) 반도체장치 및 그 제조방법
EP0209794A2 (en) Method for producing a contact for a semiconductor device
KR100486120B1 (ko) Ｍｏｓ 트랜지스터의 형성 방법
KR20010008839A (ko) 반도체 장치의 셀프-얼라인 콘택 형성방법
KR100198637B1 (ko) 반도체 소자의 제조 방법
KR100370154B1 (ko) 반도체 소자의 제조 방법
US6127717A (en) Totally self-aligned transistor with polysilicon shallow trench isolation
KR960016236B1 (ko) 반도체 장치의 자기 정렬형 콘택 제조방법
KR100298462B1 (ko) 반도체 소자의 제조방법
KR100367741B1 (ko) 개선된 보더리스 콘택 구조 및 그 제조방법
KR100209210B1 (ko) 반도체 소자의 콘택홀 형성방법
US5821165A (en) Method of fabricating semiconductor devices

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19940125

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 19981127

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 19940125

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20000929

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20010622

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20010922

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20010924

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20040831

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20050830

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20060830

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20070829

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20080828

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20090915

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20100916

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20110915

Start annual number: 11

End annual number: 11

FPAY Annual fee payment

Payment date: 20120907

Year of fee payment: 12

PR1001 Payment of annual fee

Payment date: 20120907

Start annual number: 12

End annual number: 12

FPAY Annual fee payment

Payment date: 20130906

Year of fee payment: 13

PR1001 Payment of annual fee

Payment date: 20130906

Start annual number: 13

End annual number: 13

EXPY Expiration of term
PC1801 Expiration of term

Termination date: 20140725

Termination category: Expiration of duration