TW230266B - - Google Patents

Info

Publication number
TW230266B
TW230266B TW082110302A TW82110302A TW230266B TW 230266 B TW230266 B TW 230266B TW 082110302 A TW082110302 A TW 082110302A TW 82110302 A TW82110302 A TW 82110302A TW 230266 B TW230266 B TW 230266B
Authority
TW
Taiwan
Application number
TW082110302A
Other languages
Chinese (zh)
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW230266B publication Critical patent/TW230266B/zh

Links

Classifications

    • H10W20/066—
    • H10D64/0112—
    • H10D64/0113—
TW082110302A 1993-01-26 1993-12-06 TW230266B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US98721393A 1993-01-26 1993-01-26

Publications (1)

Publication Number Publication Date
TW230266B true TW230266B (enExample) 1994-09-11

Family

ID=25533110

Family Applications (1)

Application Number Title Priority Date Filing Date
TW082110302A TW230266B (enExample) 1993-01-26 1993-12-06

Country Status (7)

Country Link
US (1) US5654240A (enExample)
EP (1) EP0609014B1 (enExample)
JP (1) JPH06318682A (enExample)
KR (1) KR100311059B1 (enExample)
DE (1) DE69413861T2 (enExample)
ES (1) ES2122158T3 (enExample)
TW (1) TW230266B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843815A (en) * 1997-01-15 1998-12-01 Taiwan Semiconductor Manufacturing Company, Ltd. Method for fabricating a MOSFET device, for an SRAM cell, using a self-aligned ion implanted halo region
US6562724B1 (en) * 1997-06-09 2003-05-13 Texas Instruments Incorporated Self-aligned stack formation
US6043129A (en) * 1997-06-09 2000-03-28 Integrated Device Technology, Inc. High density MOSFET with raised source and drain regions
US6063676A (en) * 1997-06-09 2000-05-16 Integrated Device Technology, Inc. Mosfet with raised source and drain regions
US5949143A (en) * 1998-01-22 1999-09-07 Advanced Micro Devices, Inc. Semiconductor interconnect structure with air gap for reducing intralayer capacitance in metal layers in damascene metalization process
US6103455A (en) * 1998-05-07 2000-08-15 Taiwan Semiconductor Manufacturing Company Method to form a recess free deep contact
US6117754A (en) * 1998-05-11 2000-09-12 Texas Instruments - Acer Incorporated Trench free process for SRAM with buried contact structure
US6492276B1 (en) 1998-05-29 2002-12-10 Taiwan Semiconductor Manufacturing Company Hard masking method for forming residue free oxygen containing plasma etched layer
US6019906A (en) * 1998-05-29 2000-02-01 Taiwan Semiconductor Manufacturing Company Hard masking method for forming patterned oxygen containing plasma etchable layer
US6007733A (en) * 1998-05-29 1999-12-28 Taiwan Semiconductor Manufacturing Company Hard masking method for forming oxygen containing plasma etchable layer
US6165898A (en) * 1998-10-23 2000-12-26 Taiwan Semiconductor Manufacturing Company Dual damascene patterned conductor layer formation method without etch stop layer
US6429124B1 (en) * 1999-04-14 2002-08-06 Micron Technology, Inc. Local interconnect structures for integrated circuits and methods for making the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4288256A (en) * 1977-12-23 1981-09-08 International Business Machines Corporation Method of making FET containing stacked gates
NL186352C (nl) * 1980-08-27 1990-11-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
EP0192093B1 (en) * 1985-01-30 1990-06-13 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same
US4994402A (en) * 1987-06-26 1991-02-19 Hewlett-Packard Company Method of fabricating a coplanar, self-aligned contact structure in a semiconductor device
KR900008868B1 (ko) * 1987-09-30 1990-12-11 삼성전자 주식회사 저항성 접촉을 갖는 반도체 장치의 제조방법
US5210048A (en) * 1988-10-19 1993-05-11 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with offset transistor and method for manufacturing the same
US5110753A (en) * 1988-11-10 1992-05-05 Texas Instruments Incorporated Cross-point contact-free floating-gate memory array with silicided buried bitlines
US5162262A (en) * 1989-03-14 1992-11-10 Mitsubishi Denki Kabushiki Kaisha Multi-layered interconnection structure for a semiconductor device and manufactured method thereof
US4978637A (en) * 1989-05-31 1990-12-18 Sgs-Thomson Microelectronics, Inc. Local interconnect process for integrated circuits
US5151387A (en) * 1990-04-30 1992-09-29 Sgs-Thomson Microelectronics, Inc. Polycrystalline silicon contact structure
JPH04179239A (ja) * 1990-11-14 1992-06-25 Sony Corp 半導体装置の製造方法
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
FR2677481B1 (fr) * 1991-06-07 1993-08-20 Commissariat Energie Atomique Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue.
US5270240A (en) * 1991-07-10 1993-12-14 Micron Semiconductor, Inc. Four poly EPROM process and structure comprising a conductive source line structure and self-aligned polycrystalline silicon digit lines
US5149665A (en) * 1991-07-10 1992-09-22 Micron Technology, Inc. Conductive source line for high density programmable read-only memory applications
KR940010315B1 (ko) * 1991-10-10 1994-10-22 금성 일렉트론 주식회사 반도체 소자의 미세 패턴 형성 방법
US5246883A (en) * 1992-02-06 1993-09-21 Sgs-Thomson Microelectronics, Inc. Semiconductor contact via structure and method

Also Published As

Publication number Publication date
EP0609014A3 (en) 1995-01-04
US5654240A (en) 1997-08-05
JPH06318682A (ja) 1994-11-15
KR100311059B1 (ko) 2001-12-15
DE69413861D1 (de) 1998-11-19
ES2122158T3 (es) 1998-12-16
DE69413861T2 (de) 1999-04-22
EP0609014A2 (en) 1994-08-03
EP0609014B1 (en) 1998-10-14

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Legal Events

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