KR100294529B1 - 플라즈마처리장치 - Google Patents

플라즈마처리장치 Download PDF

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Publication number
KR100294529B1
KR100294529B1 KR1019940004203A KR19940004203A KR100294529B1 KR 100294529 B1 KR100294529 B1 KR 100294529B1 KR 1019940004203 A KR1019940004203 A KR 1019940004203A KR 19940004203 A KR19940004203 A KR 19940004203A KR 100294529 B1 KR100294529 B1 KR 100294529B1
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KR
South Korea
Prior art keywords
processing
plasma
high frequency
processed
wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1019940004203A
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English (en)
Korean (ko)
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KR940022771A (ko
Inventor
이마하시잇세이
Original Assignee
히가시 데쓰로
동경 엘렉트론 주식회사
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Publication of KR940022771A publication Critical patent/KR940022771A/ko
Application granted granted Critical
Publication of KR100294529B1 publication Critical patent/KR100294529B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32678—Electron cyclotron resonance
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1019940004203A 1993-03-06 1994-03-04 플라즈마처리장치 Expired - Lifetime KR100294529B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-71225 1993-03-06
JP7122593 1993-03-06

Publications (2)

Publication Number Publication Date
KR940022771A KR940022771A (ko) 1994-10-21
KR100294529B1 true KR100294529B1 (ko) 2001-10-24

Family

ID=13454531

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940004203A Expired - Lifetime KR100294529B1 (ko) 1993-03-06 1994-03-04 플라즈마처리장치

Country Status (3)

Country Link
US (1) US5554223A (https=)
KR (1) KR100294529B1 (https=)
TW (1) TW249313B (https=)

Families Citing this family (87)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5874704A (en) * 1995-06-30 1999-02-23 Lam Research Corporation Low inductance large area coil for an inductively coupled plasma source
TW283250B (en) * 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
JP3437376B2 (ja) * 1996-05-21 2003-08-18 キヤノン株式会社 プラズマ処理装置及び処理方法
US6056848A (en) * 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6112695A (en) * 1996-10-08 2000-09-05 Nano Scale Surface Systems, Inc. Apparatus for plasma deposition of a thin film onto the interior surface of a container
JP3598717B2 (ja) * 1997-03-19 2004-12-08 株式会社日立製作所 プラズマ処理装置
JP3582287B2 (ja) * 1997-03-26 2004-10-27 株式会社日立製作所 エッチング装置
US6180954B1 (en) 1997-05-22 2001-01-30 Eaton Corporation Dual-walled exhaust tubing for vacuum pump
US6286451B1 (en) * 1997-05-29 2001-09-11 Applied Materials, Inc. Dome: shape and temperature controlled surfaces
US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6143124A (en) * 1997-08-22 2000-11-07 Micron Technology, Inc. Apparatus and method for generating a plasma from an electromagnetic field having a lissajous pattern
US5903106A (en) * 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
JP2000114246A (ja) 1998-08-07 2000-04-21 Ulvac Seimaku Kk ドライエッチング方法および装置、フォトマスクおよびその作製方法、ならびに半導体回路およびその製作方法
JP3608416B2 (ja) * 1999-02-02 2005-01-12 日新電機株式会社 プラズマ源
US6344420B1 (en) * 1999-03-15 2002-02-05 Kabushiki Kaisha Toshiba Plasma processing method and plasma processing apparatus
US6239553B1 (en) * 1999-04-22 2001-05-29 Applied Materials, Inc. RF plasma source for material processing
EP1194032A1 (en) * 1999-06-24 2002-04-10 Wisconsin Alumni Research Foundation Cold-plasma treatment of seeds to remove surface materials
US6458723B1 (en) 1999-06-24 2002-10-01 Silicon Genesis Corporation High temperature implant apparatus
JP3385528B2 (ja) * 1999-07-06 2003-03-10 日本電気株式会社 ドライエッチング装置とドライエッチング方法
JP3953247B2 (ja) * 2000-01-11 2007-08-08 株式会社日立国際電気 プラズマ処理装置
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US7196283B2 (en) 2000-03-17 2007-03-27 Applied Materials, Inc. Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US8048806B2 (en) 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US6388383B1 (en) * 2000-03-31 2002-05-14 Lam Research Corporation Method of an apparatus for obtaining neutral dissociated gas atoms
CN1582487B (zh) * 2001-06-01 2010-05-26 东京毅力科创株式会社 一种等离子体处理装置及其处理方法
AU2002341591A1 (en) * 2001-09-14 2003-04-01 Tokyo Electron Limited Plasma processing apparatus with coil magnet system
US20030168012A1 (en) * 2002-03-07 2003-09-11 Hitoshi Tamura Plasma processing device and plasma processing method
KR100469580B1 (ko) * 2002-05-15 2005-02-02 최대규 플라즈마 세정 장치
TWI283899B (en) 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
CN100564252C (zh) * 2003-04-07 2009-12-02 理想星株式会社 气体原子内包富勒烯的制造装置、制造方法以及气体原子内包富勒烯
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
JP4269263B2 (ja) * 2003-07-01 2009-05-27 富士電機デバイステクノロジー株式会社 硬質カーボン膜の形成方法および装置
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
KR100599092B1 (ko) * 2004-11-29 2006-07-12 삼성전자주식회사 구동 주파수 조절에 의한 전자기유도 가속장치
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US20080118663A1 (en) * 2006-10-12 2008-05-22 Applied Materials, Inc. Contamination reducing liner for inductively coupled chamber
US7845310B2 (en) * 2006-12-06 2010-12-07 Axcelis Technologies, Inc. Wide area radio frequency plasma apparatus for processing multiple substrates
JP5391659B2 (ja) * 2008-11-18 2014-01-15 東京エレクトロン株式会社 プラズマ処理装置
JP5410950B2 (ja) * 2009-01-15 2014-02-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5572329B2 (ja) * 2009-01-15 2014-08-13 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
PT2251454E (pt) 2009-05-13 2014-10-01 Sio2 Medical Products Inc Revestimento e inspeção de vaso
US7985188B2 (en) 2009-05-13 2011-07-26 Cv Holdings Llc Vessel, coating, inspection and processing apparatus
US9458536B2 (en) 2009-07-02 2016-10-04 Sio2 Medical Products, Inc. PECVD coating methods for capped syringes, cartridges and other articles
US11624115B2 (en) 2010-05-12 2023-04-11 Sio2 Medical Products, Inc. Syringe with PECVD lubrication
US9878101B2 (en) 2010-11-12 2018-01-30 Sio2 Medical Products, Inc. Cyclic olefin polymer vessels and vessel coating methods
US9272095B2 (en) 2011-04-01 2016-03-01 Sio2 Medical Products, Inc. Vessels, contact surfaces, and coating and inspection apparatus and methods
CN103002649B (zh) * 2011-09-13 2016-09-14 中微半导体设备(上海)有限公司 一种电感耦合式的等离子体处理装置及其基片处理方法
CA2855353C (en) 2011-11-11 2021-01-19 Sio2 Medical Products, Inc. Passivation, ph protective or lubricity coating for pharmaceutical package, coating process and apparatus
US11116695B2 (en) 2011-11-11 2021-09-14 Sio2 Medical Products, Inc. Blood sample collection tube
EP2846755A1 (en) 2012-05-09 2015-03-18 SiO2 Medical Products, Inc. Saccharide protective coating for pharmaceutical package
US20150297800A1 (en) 2012-07-03 2015-10-22 Sio2 Medical Products, Inc. SiOx BARRIER FOR PHARMACEUTICAL PACKAGE AND COATING PROCESS
US9664626B2 (en) 2012-11-01 2017-05-30 Sio2 Medical Products, Inc. Coating inspection method
WO2014078666A1 (en) 2012-11-16 2014-05-22 Sio2 Medical Products, Inc. Method and apparatus for detecting rapid barrier coating integrity characteristics
AU2013352436B2 (en) 2012-11-30 2018-10-25 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition on medical syringes, cartridges, and the like
US9764093B2 (en) 2012-11-30 2017-09-19 Sio2 Medical Products, Inc. Controlling the uniformity of PECVD deposition
KR20140095825A (ko) * 2013-01-25 2014-08-04 삼성전자주식회사 플라즈마 설비
US9662450B2 (en) 2013-03-01 2017-05-30 Sio2 Medical Products, Inc. Plasma or CVD pre-treatment for lubricated pharmaceutical package, coating process and apparatus
CN105392916B (zh) 2013-03-11 2019-03-08 Sio2医药产品公司 涂布包装材料
US9937099B2 (en) 2013-03-11 2018-04-10 Sio2 Medical Products, Inc. Trilayer coated pharmaceutical packaging with low oxygen transmission rate
EP2971227B1 (en) 2013-03-15 2017-11-15 Si02 Medical Products, Inc. Coating method.
WO2015148471A1 (en) 2014-03-28 2015-10-01 Sio2 Medical Products, Inc. Antistatic coatings for plastic vessels
JP5977853B1 (ja) * 2015-03-20 2016-08-24 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム及び記録媒体
KR102786617B1 (ko) 2015-08-18 2025-03-26 에스아이오2 메디컬 프로덕츠, 엘엘씨 산소 전달률이 낮은, 의약품 및 다른 제품의 포장용기
CN108575042B (zh) * 2017-03-09 2021-04-09 北京北方华创微电子装备有限公司 一种线圈、介质筒和等离子体腔室
WO2020141806A2 (ko) * 2018-12-31 2020-07-09 인투코어테크놀로지 주식회사 플라즈마 발생 장치 및 그 동작 방법
US20200286712A1 (en) * 2019-03-05 2020-09-10 Advanced Energy Industries, Inc. Single-turn and laminated-wall inductively coupled plasma sources
TWI871541B (zh) * 2022-11-11 2025-02-01 日商東京威力科創股份有限公司 半導體元件的鈍化設備及鈍化方法
CN119764155A (zh) * 2025-03-07 2025-04-04 上海邦芯半导体科技有限公司 一种电容耦合等离子体刻蚀设备以及刻蚀方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0312923A (ja) * 1989-06-12 1991-01-21 Hitachi Ltd プラズマ処理装置
JPH03222415A (ja) * 1990-01-29 1991-10-01 Applied Materials Japan Kk 回転磁界を用いた放電反応装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3875068A (en) * 1973-02-20 1975-04-01 Tegal Corp Gaseous plasma reaction apparatus
US4115184A (en) * 1975-12-29 1978-09-19 Northern Telecom Limited Method of plasma etching
US4368092A (en) * 1981-04-02 1983-01-11 The Perkin-Elmer Corporation Apparatus for the etching for semiconductor devices
WO1986006923A1 (en) * 1985-05-03 1986-11-20 The Australian National University Method and apparatus for producing large volume magnetoplasmas
US4740268A (en) * 1987-05-04 1988-04-26 Motorola Inc. Magnetically enhanced plasma system
US4792732A (en) * 1987-06-12 1988-12-20 United States Of America As Represented By The Secretary Of The Air Force Radio frequency plasma generator
JPH03170684A (ja) * 1989-11-28 1991-07-24 Tokyo Ohka Kogyo Co Ltd プラズマ処理方法
US5330606A (en) * 1990-12-14 1994-07-19 Matsushita Electric Industrial Co., Ltd. Plasma source for etching
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
KR970005035B1 (ko) * 1992-03-31 1997-04-11 마쯔시다덴기산교 가부시기가이샤 플라즈마발생방법 및 그 장치
JPH0613196A (ja) * 1992-06-25 1994-01-21 Matsushita Electric Ind Co Ltd プラズマ発生方法および発生装置
US5440206A (en) * 1992-06-26 1995-08-08 Tokyo Electron Ltd. Plasma processing apparatus comprising means for generating rotating magnetic field
US5404079A (en) * 1992-08-13 1995-04-04 Matsushita Electric Industrial Co., Ltd. Plasma generating apparatus
US5487785A (en) * 1993-03-26 1996-01-30 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5430355A (en) * 1993-07-30 1995-07-04 Texas Instruments Incorporated RF induction plasma source for plasma processing

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0312923A (ja) * 1989-06-12 1991-01-21 Hitachi Ltd プラズマ処理装置
JPH03222415A (ja) * 1990-01-29 1991-10-01 Applied Materials Japan Kk 回転磁界を用いた放電反応装置

Also Published As

Publication number Publication date
US5554223A (en) 1996-09-10
KR940022771A (ko) 1994-10-21
TW249313B (https=) 1995-06-11

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