KR100280168B1 - 전압구동형 전력용 반도체장치 - Google Patents
전압구동형 전력용 반도체장치 Download PDFInfo
- Publication number
- KR100280168B1 KR100280168B1 KR1019980028537A KR19980028537A KR100280168B1 KR 100280168 B1 KR100280168 B1 KR 100280168B1 KR 1019980028537 A KR1019980028537 A KR 1019980028537A KR 19980028537 A KR19980028537 A KR 19980028537A KR 100280168 B1 KR100280168 B1 KR 100280168B1
- Authority
- KR
- South Korea
- Prior art keywords
- power semiconductor
- iegt
- semiconductor device
- emitter
- voltage
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 345
- 238000003825 pressing Methods 0.000 claims description 34
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims 3
- 230000008859 change Effects 0.000 abstract description 108
- 239000000463 material Substances 0.000 abstract description 54
- 229910052750 molybdenum Inorganic materials 0.000 description 55
- 239000011733 molybdenum Substances 0.000 description 55
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 54
- 238000010586 diagram Methods 0.000 description 30
- 238000010009 beating Methods 0.000 description 28
- 238000009413 insulation Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 238000004804 winding Methods 0.000 description 14
- 230000010355 oscillation Effects 0.000 description 13
- 238000006073 displacement reaction Methods 0.000 description 12
- 239000012212 insulator Substances 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000035699 permeability Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 230000000541 pulsatile effect Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
- Computer And Data Communications (AREA)
- Data Exchanges In Wide-Area Networks (AREA)
- Information Transfer Between Computers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19030697 | 1997-07-15 | ||
| JP97-190306 | 1997-07-15 | ||
| JP97-19036 | 1997-07-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19990013870A KR19990013870A (ko) | 1999-02-25 |
| KR100280168B1 true KR100280168B1 (ko) | 2001-02-01 |
Family
ID=73149557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019980028537A KR100280168B1 (ko) | 1997-07-15 | 1998-07-15 | 전압구동형 전력용 반도체장치 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH10222438A (ja) |
| KR (1) | KR100280168B1 (ja) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000076156A (ja) * | 1998-09-03 | 2000-03-14 | Fujitsu Ltd | 電子メール編集方法及び情報処理装置及び記録媒体 |
| JP3465615B2 (ja) * | 1999-02-08 | 2003-11-10 | 日本電気株式会社 | 検索方法ならびに装置及び同方法がプログラムされ記録された記録媒体 |
| US6496853B1 (en) * | 1999-07-12 | 2002-12-17 | Micron Technology, Inc. | Method and system for managing related electronic messages |
| US6701346B1 (en) * | 1999-07-12 | 2004-03-02 | Micron Technology, Inc. | Managing redundant electronic messages |
| US6631398B1 (en) | 1999-07-12 | 2003-10-07 | Micron Technology, Inc. | Managing redundant electronic messages |
| WO2001020855A1 (fr) * | 1999-09-16 | 2001-03-22 | Fujitsu Limited | Systeme de courrier electronique, et support d'enregistrement pour courrier electronique lisible par ordinateur |
| AU6024300A (en) * | 2000-05-24 | 2001-12-03 | E-Jan Net Co. | Mail server, mail management system, mail management method, and recording medium |
| JP3723422B2 (ja) | 2000-07-11 | 2005-12-07 | 三洋電機株式会社 | 携帯端末機 |
| JP4573406B2 (ja) * | 2000-07-26 | 2010-11-04 | シャープ株式会社 | 電子メールの送受信装置 |
| US6915333B2 (en) | 2001-12-14 | 2005-07-05 | International Business Machines Corporation | Method of managing attached document |
| ITMI20022339A1 (it) * | 2002-11-05 | 2004-05-06 | Paolo Rucco | Metodo e dispositivi per eseguire controlli di sicurezza |
| JPWO2005015410A1 (ja) * | 2003-08-12 | 2006-10-05 | 富士通株式会社 | 電子メール分類方法、電子メール分類プログラムおよび電子メール分類装置 |
| GB2443469A (en) | 2006-11-03 | 2008-05-07 | Messagelabs Ltd | Detection of image spam |
| JP4716136B2 (ja) * | 2007-09-05 | 2011-07-06 | 日本電気株式会社 | 電子メールの保存方法、電子メールの再生方法、電子メールシステム、および電子メール保存／再生プログラム |
| JP5326785B2 (ja) * | 2009-05-11 | 2013-10-30 | 日本電気株式会社 | メール管理装置、メール管理装置のメール管理方法及びプログラム |
-
1997
- 1997-01-31 JP JP9019036A patent/JPH10222438A/ja active Pending
-
1998
- 1998-07-15 KR KR1019980028537A patent/KR100280168B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR19990013870A (ko) | 1999-02-25 |
| JPH10222438A (ja) | 1998-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20081027 Year of fee payment: 9 |
|
| LAPS | Lapse due to unpaid annual fee |