KR100262883B1 - 플라즈마 크리닝 방법 및 플라즈마 처리장치 - Google Patents

플라즈마 크리닝 방법 및 플라즈마 처리장치 Download PDF

Info

Publication number
KR100262883B1
KR100262883B1 KR1019960018647A KR19960018647A KR100262883B1 KR 100262883 B1 KR100262883 B1 KR 100262883B1 KR 1019960018647 A KR1019960018647 A KR 1019960018647A KR 19960018647 A KR19960018647 A KR 19960018647A KR 100262883 B1 KR100262883 B1 KR 100262883B1
Authority
KR
South Korea
Prior art keywords
substrate
plasma
substrate stage
frequency power
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019960018647A
Other languages
English (en)
Korean (ko)
Other versions
KR960042935A (ko
Inventor
다카히로 다무라
Original Assignee
니시히라 쥰지
아넬바 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시히라 쥰지, 아넬바 가부시키가이샤 filed Critical 니시히라 쥰지
Publication of KR960042935A publication Critical patent/KR960042935A/ko
Application granted granted Critical
Publication of KR100262883B1 publication Critical patent/KR100262883B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
KR1019960018647A 1995-05-30 1996-05-30 플라즈마 크리닝 방법 및 플라즈마 처리장치 Expired - Lifetime KR100262883B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-156977 1995-05-30
JP7156977A JPH08330243A (ja) 1995-05-30 1995-05-30 プラズマクリーニング方法及びこの方法に使用される配置領域保護体

Publications (2)

Publication Number Publication Date
KR960042935A KR960042935A (ko) 1996-12-21
KR100262883B1 true KR100262883B1 (ko) 2000-09-01

Family

ID=15639476

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960018647A Expired - Lifetime KR100262883B1 (ko) 1995-05-30 1996-05-30 플라즈마 크리닝 방법 및 플라즈마 처리장치

Country Status (3)

Country Link
JP (1) JPH08330243A (enExample)
KR (1) KR100262883B1 (enExample)
TW (1) TW295772B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101586237B1 (ko) * 2015-07-24 2016-01-19 주식회사 애니테이프 대기압 플라즈마를 이용한 압출성형재의 윤활유 제거 장치

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596123B1 (en) * 2000-01-28 2003-07-22 Applied Materials, Inc. Method and apparatus for cleaning a semiconductor wafer processing system
JP4791637B2 (ja) * 2001-01-22 2011-10-12 キヤノンアネルバ株式会社 Ｃｖｄ装置とこれを用いた処理方法
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR100799815B1 (ko) * 2002-12-18 2008-01-31 엘지노텔 주식회사 시스템간 버전 호환성 처리 방법
JP5870325B2 (ja) * 2006-02-14 2016-02-24 大学共同利用機関法人自然科学研究機構 水素貯蔵金属又は合金の初期活性化方法及び水素化方法
JPWO2010084909A1 (ja) * 2009-01-21 2012-07-19 キヤノンアネルバ株式会社 磁性膜加工チャンバのクリーニング方法、磁性素子の製造方法、および基板処理装置
WO2014142031A1 (ja) * 2013-03-13 2014-09-18 株式会社日立国際電気 基板処理装置、基板処理装置の制御方法、クリーニング方法及び半導体装置の製造方法並びに記録媒体
US12211737B2 (en) 2021-08-27 2025-01-28 Taiwan Semiconductor Manufacturing Company, Ltd. Cleaning chamber for metal oxide removal

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555184A (ja) * 1991-08-27 1993-03-05 Fujitsu Ltd クリーニング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555184A (ja) * 1991-08-27 1993-03-05 Fujitsu Ltd クリーニング方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101586237B1 (ko) * 2015-07-24 2016-01-19 주식회사 애니테이프 대기압 플라즈마를 이용한 압출성형재의 윤활유 제거 장치

Also Published As

Publication number Publication date
TW295772B (enExample) 1997-01-11
KR960042935A (ko) 1996-12-21
JPH08330243A (ja) 1996-12-13

Similar Documents

Publication Publication Date Title
US6769439B2 (en) Plasma cleaning method and placement area protector used in the method
US6178919B1 (en) Perforated plasma confinement ring in plasma reactors
US20100098882A1 (en) Plasma source for chamber cleaning and process
US5389197A (en) Method of and apparatus for plasma processing of wafer
EP1895565A1 (en) Plasma processing apparatus and method
KR100262883B1 (ko) 플라즈마 크리닝 방법 및 플라즈마 처리장치
KR100249548B1 (ko) 플라즈마 처리 시스템
JP3798491B2 (ja) ドライエッチング方法
KR20180124773A (ko) 플라즈마 처리 장치의 세정 방법
WO2020013014A1 (ja) クリーニング方法及び基板処理装置
KR20010079817A (ko) 플라스마 처리 장치
US6329294B1 (en) Method for removing photoresist mask used for etching of metal layer and other etching by-products
JP2024159784A (ja) エッチング方法及びプラズマ処理装置
US20060281323A1 (en) Method of cleaning substrate processing apparatus
JP3362093B2 (ja) エッチングダメージの除去方法
CN114695046B (zh) 一种等离子体处理装置和处理方法
JP3599834B2 (ja) プラズマ処理装置
JPH09129611A (ja) エッチング方法
US20030234440A1 (en) Method of forming a fluorocarbon polymer film on a substrate using a passivation layer
JP3364131B2 (ja) プラズマ処理装置
JP3373466B2 (ja) プラズマ処理装置及びプラズマ処理方法
JP3432720B2 (ja) プラズマ処理装置及びプラズマ処理方法
JPH0758087A (ja) プラズマ処理装置
JPH04186615A (ja) 半導体製造装置
JPH0896990A (ja) プラズマ処理装置およびプラズマ処理方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

AMND Amendment
J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

FPAY Annual fee payment

Payment date: 20130502

Year of fee payment: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

FPAY Annual fee payment

Payment date: 20140418

Year of fee payment: 15

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

FPAY Annual fee payment

Payment date: 20150416

Year of fee payment: 16

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 16

PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20160531

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000