KR100254851B1 - 도막형성 방법 - Google Patents

도막형성 방법 Download PDF

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Publication number
KR100254851B1
KR100254851B1 KR1019950002989A KR19950002989A KR100254851B1 KR 100254851 B1 KR100254851 B1 KR 100254851B1 KR 1019950002989 A KR1019950002989 A KR 1019950002989A KR 19950002989 A KR19950002989 A KR 19950002989A KR 100254851 B1 KR100254851 B1 KR 100254851B1
Authority
KR
South Korea
Prior art keywords
rotation
time
coating film
coating liquid
plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950002989A
Other languages
English (en)
Korean (ko)
Other versions
KR950034494A (ko
Inventor
히로끼 엔도
하데야 고바리
고지 우에다
히로요시 사고
Original Assignee
나카네 히사시
도쿄 오카 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 나카네 히사시, 도쿄 오카 고교 가부시키가이샤 filed Critical 나카네 히사시
Publication of KR950034494A publication Critical patent/KR950034494A/ko
Application granted granted Critical
Publication of KR100254851B1 publication Critical patent/KR100254851B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
    • B05D1/005—Spin coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/001—General methods for coating; Devices therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/11—Deposition methods from solutions or suspensions
    • C03C2218/116—Deposition methods from solutions or suspensions by spin-coating, centrifugation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Coating Apparatus (AREA)
  • Formation Of Insulating Films (AREA)
KR1019950002989A 1994-02-17 1995-02-17 도막형성 방법 Expired - Fee Related KR100254851B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP02043994A JP3280791B2 (ja) 1994-02-17 1994-02-17 塗膜形成方法
JP94-20439 1994-12-17

Publications (2)

Publication Number Publication Date
KR950034494A KR950034494A (ko) 1995-12-28
KR100254851B1 true KR100254851B1 (ko) 2000-05-01

Family

ID=12027084

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950002989A Expired - Fee Related KR100254851B1 (ko) 1994-02-17 1995-02-17 도막형성 방법

Country Status (4)

Country Link
US (1) US6277441B1 (enExample)
JP (1) JP3280791B2 (enExample)
KR (1) KR100254851B1 (enExample)
TW (1) TW267239B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875354B1 (ko) * 2001-09-25 2008-12-22 도쿄 오카 고교 가부시키가이샤 피막형성방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5714417A (en) * 1996-08-22 1998-02-03 Vanguard International Semiconductor Corporation Planarization process using artificial gravity
JP2000082647A (ja) * 1998-09-04 2000-03-21 Nec Corp レジスト膜の塗布方法及び塗布装置
KR20010003577A (ko) * 1999-06-24 2001-01-15 김영환 반도체 소자의 층간 절연막 형성 방법
JP4394239B2 (ja) * 2000-02-29 2010-01-06 独立行政法人理化学研究所 二次非線形光学特性を有するポリマーフィルムの製造方法、ポリマーフィルム及び非線形光学素子
JP5790622B2 (ja) * 2012-11-01 2015-10-07 東京エレクトロン株式会社 塗布膜形成方法、塗布膜形成装置及び記憶媒体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60123031A (ja) * 1983-12-08 1985-07-01 Hoya Corp レジスト塗布方法
JPS62190838A (ja) 1986-02-18 1987-08-21 Rohm Co Ltd レジスト塗布方法
JP2583239B2 (ja) 1987-06-16 1997-02-19 大日本印刷株式会社 フォトマスク用基板等へのレジスト塗布方法およびスピンナチャック装置
JPH0656832B2 (ja) 1988-12-09 1994-07-27 富士電機株式会社 レジスト塗布方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875354B1 (ko) * 2001-09-25 2008-12-22 도쿄 오카 고교 가부시키가이샤 피막형성방법

Also Published As

Publication number Publication date
KR950034494A (ko) 1995-12-28
JP3280791B2 (ja) 2002-05-13
US6277441B1 (en) 2001-08-21
JPH07227568A (ja) 1995-08-29
TW267239B (enExample) 1996-01-01

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