KR100254364B1 - 저항체의 제조방법 - Google Patents

저항체의 제조방법 Download PDF

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Publication number
KR100254364B1
KR100254364B1 KR1019950006104A KR19950006104A KR100254364B1 KR 100254364 B1 KR100254364 B1 KR 100254364B1 KR 1019950006104 A KR1019950006104 A KR 1019950006104A KR 19950006104 A KR19950006104 A KR 19950006104A KR 100254364 B1 KR100254364 B1 KR 100254364B1
Authority
KR
South Korea
Prior art keywords
amorphous silicon
silicon film
hydrogenated amorphous
resistivity
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950006104A
Other languages
English (en)
Korean (ko)
Other versions
KR950034303A (ko
Inventor
니이야마다카히로
이토시게오
와타나베데루오
Original Assignee
니시무로 아츠시
후다바 덴시 고교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 아츠시, 후다바 덴시 고교 가부시키가이샤 filed Critical 니시무로 아츠시
Publication of KR950034303A publication Critical patent/KR950034303A/ko
Application granted granted Critical
Publication of KR100254364B1 publication Critical patent/KR100254364B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
KR1019950006104A 1994-03-22 1995-03-22 저항체의 제조방법 Expired - Fee Related KR100254364B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-50594 1994-03-22
JP5059494A JP3254885B2 (ja) 1994-03-22 1994-03-22 抵抗体の製造方法

Publications (2)

Publication Number Publication Date
KR950034303A KR950034303A (ko) 1995-12-28
KR100254364B1 true KR100254364B1 (ko) 2000-05-01

Family

ID=12863305

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950006104A Expired - Fee Related KR100254364B1 (ko) 1994-03-22 1995-03-22 저항체의 제조방법

Country Status (5)

Country Link
US (1) US5656330A (enExample)
JP (1) JP3254885B2 (enExample)
KR (1) KR100254364B1 (enExample)
FR (1) FR2717946B1 (enExample)
TW (1) TW273634B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
KR100464294B1 (ko) * 1998-01-12 2005-05-27 삼성에스디아이 주식회사 저항체층겸용음극층을갖는필드에미션어레이및그제조방법
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6274292B1 (en) 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) * 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US7088037B2 (en) * 1999-09-01 2006-08-08 Micron Technology, Inc. Field emission display device
US6440860B1 (en) * 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
JPS59213169A (ja) * 1983-05-19 1984-12-03 Nec Corp 薄膜トランジスタ
DE3427637A1 (de) * 1983-07-26 1985-02-14 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Photorezeptor und verfahren zu seiner herstellung
US4762801A (en) * 1987-02-20 1988-08-09 National Semiconductor Corporation Method of fabricating polycrystalline silicon resistors having desired temperature coefficients
JPH0666163B2 (ja) * 1988-07-15 1994-08-24 日本電装株式会社 薄膜抵抗体を有する半導体装置及びその製造方法
JPH07240390A (ja) * 1994-02-28 1995-09-12 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
FR2717946A1 (fr) 1995-09-29
US5656330A (en) 1997-08-12
TW273634B (enExample) 1996-04-01
JP3254885B2 (ja) 2002-02-12
FR2717946B1 (fr) 1998-07-10
JPH07263636A (ja) 1995-10-13
KR950034303A (ko) 1995-12-28

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