FR2717946B1 - Elément résistif et procédé et appareil pour le fabriquer. - Google Patents

Elément résistif et procédé et appareil pour le fabriquer.

Info

Publication number
FR2717946B1
FR2717946B1 FR9503368A FR9503368A FR2717946B1 FR 2717946 B1 FR2717946 B1 FR 2717946B1 FR 9503368 A FR9503368 A FR 9503368A FR 9503368 A FR9503368 A FR 9503368A FR 2717946 B1 FR2717946 B1 FR 2717946B1
Authority
FR
France
Prior art keywords
manufacturing
resistive element
resistive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9503368A
Other languages
English (en)
Other versions
FR2717946A1 (fr
Inventor
Niiyama Takahiro
Itoh Shigeo
Teruo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Futaba Corp
Original Assignee
Futaba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Futaba Corp filed Critical Futaba Corp
Publication of FR2717946A1 publication Critical patent/FR2717946A1/fr
Application granted granted Critical
Publication of FR2717946B1 publication Critical patent/FR2717946B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
FR9503368A 1994-03-22 1995-03-22 Elément résistif et procédé et appareil pour le fabriquer. Expired - Fee Related FR2717946B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5059494A JP3254885B2 (ja) 1994-03-22 1994-03-22 抵抗体の製造方法

Publications (2)

Publication Number Publication Date
FR2717946A1 FR2717946A1 (fr) 1995-09-29
FR2717946B1 true FR2717946B1 (fr) 1998-07-10

Family

ID=12863305

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503368A Expired - Fee Related FR2717946B1 (fr) 1994-03-22 1995-03-22 Elément résistif et procédé et appareil pour le fabriquer.

Country Status (5)

Country Link
US (1) US5656330A (fr)
JP (1) JP3254885B2 (fr)
KR (1) KR100254364B1 (fr)
FR (1) FR2717946B1 (fr)
TW (1) TW273634B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9616265D0 (en) * 1996-08-02 1996-09-11 Philips Electronics Uk Ltd Electron devices
KR100464294B1 (ko) * 1998-01-12 2005-05-27 삼성에스디아이 주식회사 저항체층겸용음극층을갖는필드에미션어레이및그제조방법
US6274292B1 (en) * 1998-02-25 2001-08-14 Micron Technology, Inc. Semiconductor processing methods
US7804115B2 (en) 1998-02-25 2010-09-28 Micron Technology, Inc. Semiconductor constructions having antireflective portions
US6268282B1 (en) 1998-09-03 2001-07-31 Micron Technology, Inc. Semiconductor processing methods of forming and utilizing antireflective material layers, and methods of forming transistor gate stacks
US6281100B1 (en) 1998-09-03 2001-08-28 Micron Technology, Inc. Semiconductor processing methods
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods
US7235499B1 (en) * 1999-01-20 2007-06-26 Micron Technology, Inc. Semiconductor processing methods
US7088037B2 (en) * 1999-09-01 2006-08-08 Micron Technology, Inc. Field emission display device
US7067414B1 (en) 1999-09-01 2006-06-27 Micron Technology, Inc. Low k interlevel dielectric layer fabrication methods
US6440860B1 (en) 2000-01-18 2002-08-27 Micron Technology, Inc. Semiconductor processing methods of transferring patterns from patterned photoresists to materials, and structures comprising silicon nitride

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490453A (en) * 1981-01-16 1984-12-25 Canon Kabushiki Kaisha Photoconductive member of a-silicon with nitrogen
JPS59213169A (ja) * 1983-05-19 1984-12-03 Nec Corp 薄膜トランジスタ
DE3427637A1 (de) * 1983-07-26 1985-02-14 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Photorezeptor und verfahren zu seiner herstellung
US4762801A (en) * 1987-02-20 1988-08-09 National Semiconductor Corporation Method of fabricating polycrystalline silicon resistors having desired temperature coefficients
JPH0666163B2 (ja) * 1988-07-15 1994-08-24 日本電装株式会社 薄膜抵抗体を有する半導体装置及びその製造方法
JPH07240390A (ja) * 1994-02-28 1995-09-12 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100254364B1 (ko) 2000-05-01
KR950034303A (ko) 1995-12-28
US5656330A (en) 1997-08-12
JP3254885B2 (ja) 2002-02-12
FR2717946A1 (fr) 1995-09-29
JPH07263636A (ja) 1995-10-13
TW273634B (fr) 1996-04-01

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20141128