KR100224052B1 - 싱크로너스 반도체 메모리 장치와 그의 동작 방법 - Google Patents

싱크로너스 반도체 메모리 장치와 그의 동작 방법 Download PDF

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Publication number
KR100224052B1
KR100224052B1 KR1019960039227A KR19960039227A KR100224052B1 KR 100224052 B1 KR100224052 B1 KR 100224052B1 KR 1019960039227 A KR1019960039227 A KR 1019960039227A KR 19960039227 A KR19960039227 A KR 19960039227A KR 100224052 B1 KR100224052 B1 KR 100224052B1
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KR
South Korea
Prior art keywords
data
cycle
output
transfer
pipeline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019960039227A
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English (en)
Korean (ko)
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KR970017604A (ko
Inventor
하루끼 도다
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
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Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR970017604A publication Critical patent/KR970017604A/ko
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Publication of KR100224052B1 publication Critical patent/KR100224052B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Information Transfer Systems (AREA)
KR1019960039227A 1995-09-12 1996-09-11 싱크로너스 반도체 메모리 장치와 그의 동작 방법 Expired - Fee Related KR100224052B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-234520 1995-09-12
JP23452095 1995-09-12

Publications (2)

Publication Number Publication Date
KR970017604A KR970017604A (ko) 1997-04-30
KR100224052B1 true KR100224052B1 (ko) 1999-10-15

Family

ID=16972318

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039227A Expired - Fee Related KR100224052B1 (ko) 1995-09-12 1996-09-11 싱크로너스 반도체 메모리 장치와 그의 동작 방법

Country Status (2)

Country Link
KR (1) KR100224052B1 (https=)
TW (1) TW319840B (https=)

Also Published As

Publication number Publication date
KR970017604A (ko) 1997-04-30
TW319840B (https=) 1997-11-11

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