KR100219824B1 - 노광방법 및 장치, 그리고 그것을 사용한 디바이스제조방법 - Google Patents

노광방법 및 장치, 그리고 그것을 사용한 디바이스제조방법 Download PDF

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Publication number
KR100219824B1
KR100219824B1 KR1019970000253A KR19970000253A KR100219824B1 KR 100219824 B1 KR100219824 B1 KR 100219824B1 KR 1019970000253 A KR1019970000253 A KR 1019970000253A KR 19970000253 A KR19970000253 A KR 19970000253A KR 100219824 B1 KR100219824 B1 KR 100219824B1
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KR
South Korea
Prior art keywords
wafer
operation period
scanning
stage
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019970000253A
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English (en)
Korean (ko)
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KR970060355A (ko
Inventor
마사히로 모리시타
Original Assignee
미따라이 하지메
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1698696A external-priority patent/JPH09190224A/ja
Priority claimed from JP8340445A external-priority patent/JPH09251955A/ja
Application filed by 미따라이 하지메, 캐논 가부시끼가이샤 filed Critical 미따라이 하지메
Publication of KR970060355A publication Critical patent/KR970060355A/ko
Application granted granted Critical
Publication of KR100219824B1 publication Critical patent/KR100219824B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70358Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019970000253A 1996-01-08 1997-01-08 노광방법 및 장치, 그리고 그것을 사용한 디바이스제조방법 Expired - Fee Related KR100219824B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP96-16985 1996-01-08
JP1698596 1996-01-08
JP1698696A JPH09190224A (ja) 1996-01-08 1996-01-08 Xyステージ制御装置
JP96-16986 1996-01-18
JP96-340445 1996-12-06
JP8340445A JPH09251955A (ja) 1996-01-08 1996-12-06 露光方法および装置、ならびにデバイス製造方法

Publications (2)

Publication Number Publication Date
KR970060355A KR970060355A (ko) 1997-08-12
KR100219824B1 true KR100219824B1 (ko) 1999-09-01

Family

ID=27281646

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970000253A Expired - Fee Related KR100219824B1 (ko) 1996-01-08 1997-01-08 노광방법 및 장치, 그리고 그것을 사용한 디바이스제조방법

Country Status (3)

Country Link
EP (1) EP0785571B1 (enExample)
KR (1) KR100219824B1 (enExample)
DE (1) DE69610691T2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100521704B1 (ko) * 1997-09-19 2005-10-14 가부시키가이샤 니콘 스테이지장치, 주사형 노광장치 및 방법, 그리고 이것으로제조된 디바이스
JP3796367B2 (ja) 1999-03-09 2006-07-12 キヤノン株式会社 ステージ制御方法、露光方法、露光装置およびデバイス製造方法
US6285438B1 (en) 1999-05-19 2001-09-04 Nikon Corporation Scanning exposure method with reduced time between scans
JP2004072076A (ja) 2002-06-10 2004-03-04 Nikon Corp 露光装置及びステージ装置、並びにデバイス製造方法
US7016019B2 (en) 2003-12-16 2006-03-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100456136C (zh) * 2005-12-02 2009-01-28 上海微电子装备有限公司 一种步进扫描投影光刻机多总线时序同步控制方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4023126A (en) * 1975-06-26 1977-05-10 Gte Laboratories Incorporated Scanning photographic printer for integrated circuits
US5285236A (en) * 1992-09-30 1994-02-08 Kanti Jain Large-area, high-throughput, high-resolution projection imaging system

Also Published As

Publication number Publication date
EP0785571B1 (en) 2000-10-18
DE69610691D1 (de) 2000-11-23
KR970060355A (ko) 1997-08-12
DE69610691T2 (de) 2001-05-03
EP0785571A2 (en) 1997-07-23
EP0785571A3 (enExample) 1997-08-27

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