KR100205065B1 - 질화갈륨 박막 제조방법 - Google Patents
질화갈륨 박막 제조방법 Download PDFInfo
- Publication number
- KR100205065B1 KR100205065B1 KR1019950053652A KR19950053652A KR100205065B1 KR 100205065 B1 KR100205065 B1 KR 100205065B1 KR 1019950053652 A KR1019950053652 A KR 1019950053652A KR 19950053652 A KR19950053652 A KR 19950053652A KR 100205065 B1 KR100205065 B1 KR 100205065B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- substrate
- gallium nitride
- plasma
- growth
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Led Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950053652A KR100205065B1 (ko) | 1995-12-21 | 1995-12-21 | 질화갈륨 박막 제조방법 |
JP20152296A JP3226796B2 (ja) | 1995-12-21 | 1996-07-31 | 窒化ガリウム薄膜の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950053652A KR100205065B1 (ko) | 1995-12-21 | 1995-12-21 | 질화갈륨 박막 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970052918A KR970052918A (ko) | 1997-07-29 |
KR100205065B1 true KR100205065B1 (ko) | 1999-06-15 |
Family
ID=19442543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950053652A KR100205065B1 (ko) | 1995-12-21 | 1995-12-21 | 질화갈륨 박막 제조방법 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3226796B2 (ja) |
KR (1) | KR100205065B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020015788A (ko) * | 2000-08-23 | 2002-03-02 | 이구택 | 초음파를 이용한 고품질 박막의 제조방법 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102453021B1 (ko) * | 2020-09-09 | 2022-10-07 | 연세대학교 산학협력단 | 층상구조 GaN, GaN 나노시트 및 이를 이용한 전기 소자 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
MX2009012934A (es) * | 2007-06-01 | 2009-12-15 | Wyeth Corp | Metodos y composiciones para modular la actividad de bmp-10. |
-
1995
- 1995-12-21 KR KR1019950053652A patent/KR100205065B1/ko not_active IP Right Cessation
-
1996
- 1996-07-31 JP JP20152296A patent/JP3226796B2/ja not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020015788A (ko) * | 2000-08-23 | 2002-03-02 | 이구택 | 초음파를 이용한 고품질 박막의 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR970052918A (ko) | 1997-07-29 |
JPH09169600A (ja) | 1997-06-30 |
JP3226796B2 (ja) | 2001-11-05 |
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GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20080307 Year of fee payment: 10 |
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LAPS | Lapse due to unpaid annual fee |