KR100205065B1 - 질화갈륨 박막 제조방법 - Google Patents

질화갈륨 박막 제조방법 Download PDF

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Publication number
KR100205065B1
KR100205065B1 KR1019950053652A KR19950053652A KR100205065B1 KR 100205065 B1 KR100205065 B1 KR 100205065B1 KR 1019950053652 A KR1019950053652 A KR 1019950053652A KR 19950053652 A KR19950053652 A KR 19950053652A KR 100205065 B1 KR100205065 B1 KR 100205065B1
Authority
KR
South Korea
Prior art keywords
thin film
substrate
gallium nitride
plasma
growth
Prior art date
Application number
KR1019950053652A
Other languages
English (en)
Korean (ko)
Other versions
KR970052918A (ko
Inventor
이재진
이해권
서경수
남기수
Original Assignee
정선종
한국전자통신연구원
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 정선종, 한국전자통신연구원 filed Critical 정선종
Priority to KR1019950053652A priority Critical patent/KR100205065B1/ko
Priority to JP20152296A priority patent/JP3226796B2/ja
Publication of KR970052918A publication Critical patent/KR970052918A/ko
Application granted granted Critical
Publication of KR100205065B1 publication Critical patent/KR100205065B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
KR1019950053652A 1995-12-21 1995-12-21 질화갈륨 박막 제조방법 KR100205065B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950053652A KR100205065B1 (ko) 1995-12-21 1995-12-21 질화갈륨 박막 제조방법
JP20152296A JP3226796B2 (ja) 1995-12-21 1996-07-31 窒化ガリウム薄膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950053652A KR100205065B1 (ko) 1995-12-21 1995-12-21 질화갈륨 박막 제조방법

Publications (2)

Publication Number Publication Date
KR970052918A KR970052918A (ko) 1997-07-29
KR100205065B1 true KR100205065B1 (ko) 1999-06-15

Family

ID=19442543

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950053652A KR100205065B1 (ko) 1995-12-21 1995-12-21 질화갈륨 박막 제조방법

Country Status (2)

Country Link
JP (1) JP3226796B2 (ja)
KR (1) KR100205065B1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020015788A (ko) * 2000-08-23 2002-03-02 이구택 초음파를 이용한 고품질 박막의 제조방법

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102453021B1 (ko) * 2020-09-09 2022-10-07 연세대학교 산학협력단 층상구조 GaN, GaN 나노시트 및 이를 이용한 전기 소자

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MX2009012934A (es) * 2007-06-01 2009-12-15 Wyeth Corp Metodos y composiciones para modular la actividad de bmp-10.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020015788A (ko) * 2000-08-23 2002-03-02 이구택 초음파를 이용한 고품질 박막의 제조방법

Also Published As

Publication number Publication date
KR970052918A (ko) 1997-07-29
JPH09169600A (ja) 1997-06-30
JP3226796B2 (ja) 2001-11-05

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