KR0154993B1 - 반도체레이저장치의 수지코팅방법 - Google Patents

반도체레이저장치의 수지코팅방법 Download PDF

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Publication number
KR0154993B1
KR0154993B1 KR1019940016260A KR19940016260A KR0154993B1 KR 0154993 B1 KR0154993 B1 KR 0154993B1 KR 1019940016260 A KR1019940016260 A KR 1019940016260A KR 19940016260 A KR19940016260 A KR 19940016260A KR 0154993 B1 KR0154993 B1 KR 0154993B1
Authority
KR
South Korea
Prior art keywords
resin
semiconductor laser
cap
chip
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019940016260A
Other languages
English (en)
Korean (ko)
Other versions
KR950004666A (ko
Inventor
히데끼 이찌까와
히로시 찌꾸가와
Original Assignee
쯔지 하루오
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쯔지 하루오, 샤프 가부시끼가이샤 filed Critical 쯔지 하루오
Publication of KR950004666A publication Critical patent/KR950004666A/ko
Application granted granted Critical
Publication of KR0154993B1 publication Critical patent/KR0154993B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Light Receiving Elements (AREA)
KR1019940016260A 1993-07-05 1994-07-05 반도체레이저장치의 수지코팅방법 Expired - Fee Related KR0154993B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP93-165519 1993-07-05
JP16551993A JP3207016B2 (ja) 1993-07-05 1993-07-05 半導体レーザ装置の樹脂コーティング方法

Publications (2)

Publication Number Publication Date
KR950004666A KR950004666A (ko) 1995-02-18
KR0154993B1 true KR0154993B1 (ko) 1998-12-01

Family

ID=15813938

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940016260A Expired - Fee Related KR0154993B1 (ko) 1993-07-05 1994-07-05 반도체레이저장치의 수지코팅방법

Country Status (7)

Country Link
EP (1) EP0633615B1 (OSRAM)
JP (1) JP3207016B2 (OSRAM)
KR (1) KR0154993B1 (OSRAM)
CN (2) CN1063581C (OSRAM)
CA (1) CA2127299C (OSRAM)
DE (1) DE69414313T2 (OSRAM)
TW (1) TW259886B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6866887B1 (en) * 2003-10-14 2005-03-15 Photon Dynamics, Inc. Method for manufacturing PDLC-based electro-optic modulator using spin coating
CN101746578B (zh) * 2009-12-23 2011-03-16 中国科学院半导体研究所 半导体激光器储存盒
CN102194714B (zh) * 2010-03-05 2013-02-27 铜陵三佳科技股份有限公司 一种带树脂上料光电检测装置的半导体封装设备
CN103681983B (zh) * 2013-06-17 2016-02-24 深圳市绎立锐光科技开发有限公司 一种发光元件上涂覆荧光粉层的方法及喷气装置
TWI912885B (zh) * 2024-08-15 2026-01-21 台亞半導體股份有限公司 光電二極體及其製造方法
CN119965663B (zh) * 2025-04-10 2025-06-20 华芯半导体科技有限公司 一种高速vcsel半导体芯片防护封装装置及封装方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914891B2 (ja) * 1979-11-15 1984-04-06 松下電器産業株式会社 回転塗布方法および回転塗布装置
JPS57130422A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Resist coating and developing device
JPS58103132A (ja) * 1981-12-16 1983-06-20 Konishiroku Photo Ind Co Ltd スピンナ−装置
JPS5966229A (ja) * 1982-10-07 1984-04-14 Matsushita Electric Ind Co Ltd 位相ロツクル−プ回路
JPH04137580A (ja) * 1990-09-27 1992-05-12 Sharp Corp 半導体レーザ用ステム
JPH0596229A (ja) * 1991-10-09 1993-04-20 Fujitsu Ltd スピン式樹脂液塗布方法
US5557116A (en) * 1992-12-24 1996-09-17 Sharp Kabushiki Kaisha Semiconductor laser device and resin layer

Also Published As

Publication number Publication date
DE69414313T2 (de) 1999-05-27
CN1063581C (zh) 2001-03-21
EP0633615B1 (en) 1998-11-04
CA2127299C (en) 1999-01-12
JP3207016B2 (ja) 2001-09-10
DE69414313D1 (de) 1998-12-10
CN1104804A (zh) 1995-07-05
TW259886B (OSRAM) 1995-10-11
EP0633615A1 (en) 1995-01-11
JPH0722711A (ja) 1995-01-24
CA2127299A1 (en) 1995-01-06
KR950004666A (ko) 1995-02-18
CN1260616A (zh) 2000-07-19

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