KR0141485B1 - 자전관 음극 스퍼터링 장치용 타게트 - Google Patents

자전관 음극 스퍼터링 장치용 타게트

Info

Publication number
KR0141485B1
KR0141485B1 KR1019890008012A KR890008012A KR0141485B1 KR 0141485 B1 KR0141485 B1 KR 0141485B1 KR 1019890008012 A KR1019890008012 A KR 1019890008012A KR 890008012 A KR890008012 A KR 890008012A KR 0141485 B1 KR0141485 B1 KR 0141485B1
Authority
KR
South Korea
Prior art keywords
target
hexagonal
phase
targets
magnetron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890008012A
Other languages
English (en)
Korean (ko)
Other versions
KR900000963A (ko
Inventor
바이게르트 마르틴
베르흐톨트 로렌쯔
유.쉬트니 스테판
Original Assignee
볼프강 메르크; 로렌쯔 크로이쯔비허러
데구싸 악티엔 게젤샤프트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6356335&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR0141485(B1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 볼프강 메르크; 로렌쯔 크로이쯔비허러, 데구싸 악티엔 게젤샤프트 filed Critical 볼프강 메르크; 로렌쯔 크로이쯔비허러
Publication of KR900000963A publication Critical patent/KR900000963A/ko
Application granted granted Critical
Publication of KR0141485B1 publication Critical patent/KR0141485B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
KR1019890008012A 1988-06-11 1989-06-10 자전관 음극 스퍼터링 장치용 타게트 Expired - Fee Related KR0141485B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE3819906A DE3819906C1 (enExample) 1988-06-11 1988-06-11
DE3819906.9 1988-06-11
DE3819906.8 1988-06-11

Publications (2)

Publication Number Publication Date
KR900000963A KR900000963A (ko) 1990-01-31
KR0141485B1 true KR0141485B1 (ko) 1998-06-01

Family

ID=6356335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008012A Expired - Fee Related KR0141485B1 (ko) 1988-06-11 1989-06-10 자전관 음극 스퍼터링 장치용 타게트

Country Status (6)

Country Link
US (1) US5112468A (enExample)
EP (1) EP0346599B1 (enExample)
JP (1) JPH0794709B2 (enExample)
KR (1) KR0141485B1 (enExample)
AT (1) ATE89609T1 (enExample)
DE (2) DE3819906C1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282946A (en) * 1991-08-30 1994-02-01 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
EP0659901B1 (de) * 1993-12-20 1998-04-15 LEYBOLD MATERIALS GmbH Target für Magnetron-Kathodenzerstäubungsanlage aus einer Kobalt-Basislegierung
DE4438202A1 (de) * 1994-10-26 1996-05-02 Leybold Materials Gmbh Target für eine Magnetron-Kathodenzerstäubungsvorrichtung
DE19508535A1 (de) * 1995-03-10 1996-09-12 Leybold Materials Gmbh Sputtertarget aus einer Kobalt-Basislegierung mit hohem Magnetfelddurchgriff
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
US6391172B2 (en) 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6176944B1 (en) 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
US6514358B1 (en) 2000-04-05 2003-02-04 Heraeus, Inc. Stretching of magnetic materials to increase pass-through-flux (PTF)
WO2002002848A2 (en) * 2000-06-30 2002-01-10 Honeywell International Inc. Method and apparatus for processing metals, and the metals so produced
JPWO2007066555A1 (ja) * 2005-12-05 2009-05-14 独立行政法人科学技術振興機構 Ｃｏ基合金及びその製造方法
CN111155060A (zh) * 2018-11-07 2020-05-15 宁波江丰电子材料股份有限公司 钴靶坯的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981620A (en) * 1959-08-24 1961-04-25 Westinghouse Electric Corp Cobalt-nickel base alloy
US3100167A (en) * 1960-10-19 1963-08-06 Gen Electric Magnetic material
JPS5696061A (en) * 1979-12-28 1981-08-03 Matsushita Electric Ind Co Ltd Cobalt-nickel alloy magnetic thin film
JPS6314864A (ja) * 1986-07-08 1988-01-22 Ulvac Corp Ｃｏ基合金スパツタタ−ゲツトおよびその製造法

Also Published As

Publication number Publication date
JPH0251839A (ja) 1990-02-21
US5112468A (en) 1992-05-12
EP0346599A1 (de) 1989-12-20
EP0346599B1 (de) 1993-05-19
DE3819906C1 (enExample) 1989-08-03
DE58904394D1 (de) 1993-06-24
JPH0794709B2 (ja) 1995-10-11
ATE89609T1 (de) 1993-06-15
KR900000963A (ko) 1990-01-31

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