ATE89609T1 - Target fuer magnetron-kathodenzerstaeubungsanlagen. - Google Patents

Target fuer magnetron-kathodenzerstaeubungsanlagen.

Info

Publication number
ATE89609T1
ATE89609T1 AT89107319T AT89107319T ATE89609T1 AT E89609 T1 ATE89609 T1 AT E89609T1 AT 89107319 T AT89107319 T AT 89107319T AT 89107319 T AT89107319 T AT 89107319T AT E89609 T1 ATE89609 T1 AT E89609T1
Authority
AT
Austria
Prior art keywords
target
magnetron cathode
spraying systems
cathode spraying
magnetron
Prior art date
Application number
AT89107319T
Other languages
German (de)
English (en)
Inventor
Martin Dr Dipl-Phys Weigert
Lorenz Dr Dipl-Ing Berchtold
Stefan Ulrich Dr Dipl Schittny
Original Assignee
Degussa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6356335&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE89609(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Degussa filed Critical Degussa
Application granted granted Critical
Publication of ATE89609T1 publication Critical patent/ATE89609T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
AT89107319T 1988-06-11 1989-04-22 Target fuer magnetron-kathodenzerstaeubungsanlagen. ATE89609T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3819906A DE3819906C1 (enExample) 1988-06-11 1988-06-11
EP89107319A EP0346599B1 (de) 1988-06-11 1989-04-22 Target für Magnetron-Kathodenzerstäubungsanlagen

Publications (1)

Publication Number Publication Date
ATE89609T1 true ATE89609T1 (de) 1993-06-15

Family

ID=6356335

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89107319T ATE89609T1 (de) 1988-06-11 1989-04-22 Target fuer magnetron-kathodenzerstaeubungsanlagen.

Country Status (6)

Country Link
US (1) US5112468A (enExample)
EP (1) EP0346599B1 (enExample)
JP (1) JPH0794709B2 (enExample)
KR (1) KR0141485B1 (enExample)
AT (1) ATE89609T1 (enExample)
DE (2) DE3819906C1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5282946A (en) * 1991-08-30 1994-02-01 Mitsubishi Materials Corporation Platinum-cobalt alloy sputtering target and method for manufacturing same
EP0659901B1 (de) * 1993-12-20 1998-04-15 LEYBOLD MATERIALS GmbH Target für Magnetron-Kathodenzerstäubungsanlage aus einer Kobalt-Basislegierung
DE4438202A1 (de) * 1994-10-26 1996-05-02 Leybold Materials Gmbh Target für eine Magnetron-Kathodenzerstäubungsvorrichtung
DE19508535A1 (de) * 1995-03-10 1996-09-12 Leybold Materials Gmbh Sputtertarget aus einer Kobalt-Basislegierung mit hohem Magnetfelddurchgriff
US6030514A (en) * 1997-05-02 2000-02-29 Sony Corporation Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor
US6391172B2 (en) 1997-08-26 2002-05-21 The Alta Group, Inc. High purity cobalt sputter target and process of manufacturing the same
US6190516B1 (en) * 1999-10-06 2001-02-20 Praxair S.T. Technology, Inc. High magnetic flux sputter targets with varied magnetic permeability in selected regions
US6176944B1 (en) 1999-11-01 2001-01-23 Praxair S.T. Technology, Inc. Method of making low magnetic permeability cobalt sputter targets
US6514358B1 (en) 2000-04-05 2003-02-04 Heraeus, Inc. Stretching of magnetic materials to increase pass-through-flux (PTF)
WO2002002848A2 (en) * 2000-06-30 2002-01-10 Honeywell International Inc. Method and apparatus for processing metals, and the metals so produced
JPWO2007066555A1 (ja) * 2005-12-05 2009-05-14 独立行政法人科学技術振興機構 Ｃｏ基合金及びその製造方法
CN111155060A (zh) * 2018-11-07 2020-05-15 宁波江丰电子材料股份有限公司 钴靶坯的制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981620A (en) * 1959-08-24 1961-04-25 Westinghouse Electric Corp Cobalt-nickel base alloy
US3100167A (en) * 1960-10-19 1963-08-06 Gen Electric Magnetic material
JPS5696061A (en) * 1979-12-28 1981-08-03 Matsushita Electric Ind Co Ltd Cobalt-nickel alloy magnetic thin film
JPS6314864A (ja) * 1986-07-08 1988-01-22 Ulvac Corp Ｃｏ基合金スパツタタ−ゲツトおよびその製造法

Also Published As

Publication number Publication date
JPH0251839A (ja) 1990-02-21
US5112468A (en) 1992-05-12
EP0346599A1 (de) 1989-12-20
EP0346599B1 (de) 1993-05-19
DE3819906C1 (enExample) 1989-08-03
KR0141485B1 (ko) 1998-06-01
DE58904394D1 (de) 1993-06-24
JPH0794709B2 (ja) 1995-10-11
KR900000963A (ko) 1990-01-31

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Legal Events

Date Code Title Description
REN Ceased due to non-payment of the annual fee