JPWO2025203411A5 - - Google Patents

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Publication number
JPWO2025203411A5
JPWO2025203411A5 JP2024552016A JP2024552016A JPWO2025203411A5 JP WO2025203411 A5 JPWO2025203411 A5 JP WO2025203411A5 JP 2024552016 A JP2024552016 A JP 2024552016A JP 2024552016 A JP2024552016 A JP 2024552016A JP WO2025203411 A5 JPWO2025203411 A5 JP WO2025203411A5
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JP
Japan
Prior art keywords
barrier layer
electrode
layer
semiconductor device
semiconductor substrate
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JP2024552016A
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English (en)
Japanese (ja)
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JP7640000B1 (ja
JPWO2025203411A1 (https=
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Priority claimed from PCT/JP2024/012570 external-priority patent/WO2025203411A1/ja
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Publication of JP7640000B1 publication Critical patent/JP7640000B1/ja
Publication of JPWO2025203411A1 publication Critical patent/JPWO2025203411A1/ja
Publication of JPWO2025203411A5 publication Critical patent/JPWO2025203411A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2024552016A 2024-03-28 2024-03-28 半導体装置の製造方法 Active JP7640000B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/012570 WO2025203411A1 (ja) 2024-03-28 2024-03-28 半導体装置および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP7640000B1 JP7640000B1 (ja) 2025-03-05
JPWO2025203411A1 JPWO2025203411A1 (https=) 2025-10-02
JPWO2025203411A5 true JPWO2025203411A5 (https=) 2026-03-05

Family

ID=94817085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024552016A Active JP7640000B1 (ja) 2024-03-28 2024-03-28 半導体装置の製造方法

Country Status (2)

Country Link
JP (1) JP7640000B1 (https=)
WO (1) WO2025203411A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893377A (ja) * 1981-11-30 1983-06-03 Fujitsu Ltd 半導体装置の製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
JP2007042853A (ja) * 2005-08-03 2007-02-15 New Japan Radio Co Ltd 半導体装置の製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
TWI661555B (zh) * 2017-12-28 2019-06-01 Nuvoton Technology Corporation 增強型高電子遷移率電晶體元件
CN111755530A (zh) * 2020-06-15 2020-10-09 西安电子科技大学 基于双阳极结构的AlGaN/GaN基肖特基势垒二极管及制造方法

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