JP7640000B1 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP7640000B1
JP7640000B1 JP2024552016A JP2024552016A JP7640000B1 JP 7640000 B1 JP7640000 B1 JP 7640000B1 JP 2024552016 A JP2024552016 A JP 2024552016A JP 2024552016 A JP2024552016 A JP 2024552016A JP 7640000 B1 JP7640000 B1 JP 7640000B1
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electrode
semiconductor device
barrier layer
layer
manufacturing
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JP2024552016A
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Japanese (ja)
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JPWO2025203411A5 (https=
JPWO2025203411A1 (https=
Inventor
浩平 西口
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

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  • Electrodes Of Semiconductors (AREA)
JP2024552016A 2024-03-28 2024-03-28 半導体装置の製造方法 Active JP7640000B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2024/012570 WO2025203411A1 (ja) 2024-03-28 2024-03-28 半導体装置および半導体装置の製造方法

Publications (3)

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JP7640000B1 true JP7640000B1 (ja) 2025-03-05
JPWO2025203411A1 JPWO2025203411A1 (https=) 2025-10-02
JPWO2025203411A5 JPWO2025203411A5 (https=) 2026-03-05

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JP2024552016A Active JP7640000B1 (ja) 2024-03-28 2024-03-28 半導体装置の製造方法

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JP (1) JP7640000B1 (https=)
WO (1) WO2025203411A1 (https=)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893377A (ja) * 1981-11-30 1983-06-03 Fujitsu Ltd 半導体装置の製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
JP2007042853A (ja) * 2005-08-03 2007-02-15 New Japan Radio Co Ltd 半導体装置の製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
US20190207019A1 (en) * 2017-12-28 2019-07-04 Nuvoton Technology Corporation Enhancement mode hemt device
CN111755530A (zh) * 2020-06-15 2020-10-09 西安电子科技大学 基于双阳极结构的AlGaN/GaN基肖特基势垒二极管及制造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5893377A (ja) * 1981-11-30 1983-06-03 Fujitsu Ltd 半導体装置の製造方法
JP2004055788A (ja) * 2002-07-19 2004-02-19 Sony Corp 半導体装置
JP2007042853A (ja) * 2005-08-03 2007-02-15 New Japan Radio Co Ltd 半導体装置の製造方法
JP2016058546A (ja) * 2014-09-09 2016-04-21 株式会社東芝 半導体装置
US20190207019A1 (en) * 2017-12-28 2019-07-04 Nuvoton Technology Corporation Enhancement mode hemt device
CN111755530A (zh) * 2020-06-15 2020-10-09 西安电子科技大学 基于双阳极结构的AlGaN/GaN基肖特基势垒二极管及制造方法

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JPWO2025203411A1 (https=) 2025-10-02
WO2025203411A1 (ja) 2025-10-02

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