JPWO2025203411A1 - - Google Patents
Info
- Publication number
- JPWO2025203411A1 JPWO2025203411A1 JP2024552016A JP2024552016A JPWO2025203411A1 JP WO2025203411 A1 JPWO2025203411 A1 JP WO2025203411A1 JP 2024552016 A JP2024552016 A JP 2024552016A JP 2024552016 A JP2024552016 A JP 2024552016A JP WO2025203411 A1 JPWO2025203411 A1 JP WO2025203411A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
- H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2024/012570 WO2025203411A1 (ja) | 2024-03-28 | 2024-03-28 | 半導体装置および半導体装置の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP7640000B1 JP7640000B1 (ja) | 2025-03-05 |
| JPWO2025203411A1 true JPWO2025203411A1 (https=) | 2025-10-02 |
| JPWO2025203411A5 JPWO2025203411A5 (https=) | 2026-03-05 |
Family
ID=94817085
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024552016A Active JP7640000B1 (ja) | 2024-03-28 | 2024-03-28 | 半導体装置の製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7640000B1 (https=) |
| WO (1) | WO2025203411A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5893377A (ja) * | 1981-11-30 | 1983-06-03 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2004055788A (ja) * | 2002-07-19 | 2004-02-19 | Sony Corp | 半導体装置 |
| JP2007042853A (ja) * | 2005-08-03 | 2007-02-15 | New Japan Radio Co Ltd | 半導体装置の製造方法 |
| JP2016058546A (ja) * | 2014-09-09 | 2016-04-21 | 株式会社東芝 | 半導体装置 |
| TWI661555B (zh) * | 2017-12-28 | 2019-06-01 | Nuvoton Technology Corporation | 增強型高電子遷移率電晶體元件 |
| CN111755530A (zh) * | 2020-06-15 | 2020-10-09 | 西安电子科技大学 | 基于双阳极结构的AlGaN/GaN基肖特基势垒二极管及制造方法 |
-
2024
- 2024-03-28 WO PCT/JP2024/012570 patent/WO2025203411A1/ja active Pending
- 2024-03-28 JP JP2024552016A patent/JP7640000B1/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP7640000B1 (ja) | 2025-03-05 |
| WO2025203411A1 (ja) | 2025-10-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240830 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240830 |
|
| A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20240830 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20241008 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20241111 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250121 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250203 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7640000 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |