JPWO2024241882A5 - - Google Patents

Info

Publication number
JPWO2024241882A5
JPWO2024241882A5 JP2025521934A JP2025521934A JPWO2024241882A5 JP WO2024241882 A5 JPWO2024241882 A5 JP WO2024241882A5 JP 2025521934 A JP2025521934 A JP 2025521934A JP 2025521934 A JP2025521934 A JP 2025521934A JP WO2024241882 A5 JPWO2024241882 A5 JP WO2024241882A5
Authority
JP
Japan
Prior art keywords
electrode
trench
region
layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025521934A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024241882A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/017129 external-priority patent/WO2024241882A1/ja
Publication of JPWO2024241882A1 publication Critical patent/JPWO2024241882A1/ja
Publication of JPWO2024241882A5 publication Critical patent/JPWO2024241882A5/ja
Pending legal-status Critical Current

Links

JP2025521934A 2023-05-22 2024-05-08 Pending JPWO2024241882A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023084042 2023-05-22
PCT/JP2024/017129 WO2024241882A1 (ja) 2023-05-22 2024-05-08 半導体装置

Publications (2)

Publication Number Publication Date
JPWO2024241882A1 JPWO2024241882A1 (https=) 2024-11-28
JPWO2024241882A5 true JPWO2024241882A5 (https=) 2026-02-24

Family

ID=93589174

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025521934A Pending JPWO2024241882A1 (https=) 2023-05-22 2024-05-08

Country Status (3)

Country Link
US (1) US20260082683A1 (https=)
JP (1) JPWO2024241882A1 (https=)
WO (1) WO2024241882A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5359182B2 (ja) * 2008-01-28 2013-12-04 富士電機株式会社 半導体装置
JP6784337B2 (ja) * 2017-11-16 2020-11-11 富士電機株式会社 半導体装置
WO2021010000A1 (ja) * 2019-07-12 2021-01-21 富士電機株式会社 半導体装置
DE102019128072B4 (de) * 2019-10-17 2021-11-18 Infineon Technologies Ag Transistorbauelement mit einem variierenden flächenbezogenen spezifischen gaterunnerwiderstand
DE112022000700T5 (de) * 2021-03-22 2023-11-09 Rohm Co., Ltd. Halbleiterbauteil

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