JPWO2024176864A5 - - Google Patents

Info

Publication number
JPWO2024176864A5
JPWO2024176864A5 JP2025502273A JP2025502273A JPWO2024176864A5 JP WO2024176864 A5 JPWO2024176864 A5 JP WO2024176864A5 JP 2025502273 A JP2025502273 A JP 2025502273A JP 2025502273 A JP2025502273 A JP 2025502273A JP WO2024176864 A5 JPWO2024176864 A5 JP WO2024176864A5
Authority
JP
Japan
Prior art keywords
layer
etching method
silicon
containing layer
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025502273A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024176864A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/004407 external-priority patent/WO2024176864A1/ja
Publication of JPWO2024176864A1 publication Critical patent/JPWO2024176864A1/ja
Publication of JPWO2024176864A5 publication Critical patent/JPWO2024176864A5/ja
Pending legal-status Critical Current

Links

JP2025502273A 2023-02-21 2024-02-08 Pending JPWO2024176864A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023025510 2023-02-21
PCT/JP2024/004407 WO2024176864A1 (ja) 2023-02-21 2024-02-08 エッチング方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2024176864A1 JPWO2024176864A1 (https=) 2024-08-29
JPWO2024176864A5 true JPWO2024176864A5 (https=) 2026-01-05

Family

ID=92500838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025502273A Pending JPWO2024176864A1 (https=) 2023-02-21 2024-02-08

Country Status (6)

Country Link
US (1) US20250372381A1 (https=)
JP (1) JPWO2024176864A1 (https=)
KR (1) KR20250154414A (https=)
CN (1) CN120693684A (https=)
TW (1) TW202437387A (https=)
WO (1) WO2024176864A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497474B1 (ko) * 2003-06-20 2005-07-01 주식회사 하이닉스반도체 반도체소자의 게이트전극 형성방법
CN114207858B (zh) * 2019-07-31 2026-01-13 朗姆研究公司 用于mram图案化的化学蚀刻非挥发性材料
US11837471B2 (en) 2019-12-17 2023-12-05 Tokyo Electron Limited Methods of patterning small features
EP4368749A4 (en) * 2021-07-05 2025-09-24 Tokyo Electron Ltd SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

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