JPWO2024004314A5 - - Google Patents

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JPWO2024004314A5
JPWO2024004314A5 JP2024530304A JP2024530304A JPWO2024004314A5 JP WO2024004314 A5 JPWO2024004314 A5 JP WO2024004314A5 JP 2024530304 A JP2024530304 A JP 2024530304A JP 2024530304 A JP2024530304 A JP 2024530304A JP WO2024004314 A5 JPWO2024004314 A5 JP WO2024004314A5
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atoms
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nitride semiconductor
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concentration
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JP2024530304A
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JPWO2024004314A1 (https=
JP7710614B2 (ja
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Priority claimed from PCT/JP2023/014345 external-priority patent/WO2024004314A1/ja
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JP2024530304A 2022-06-30 2023-04-07 複合基板および１３族元素窒化物エピタキシャル成長用基板 Active JP7710614B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022105605 2022-06-30
JP2022105605 2022-06-30
PCT/JP2023/014345 WO2024004314A1 (ja) 2022-06-30 2023-04-07 複合基板および１３族元素窒化物エピタキシャル成長用基板

Publications (3)

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JPWO2024004314A1 JPWO2024004314A1 (https=) 2024-01-04
JPWO2024004314A5 true JPWO2024004314A5 (https=) 2024-09-19
JP7710614B2 JP7710614B2 (ja) 2025-07-18

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JP2024530304A Active JP7710614B2 (ja) 2022-06-30 2023-04-07 複合基板および１３族元素窒化物エピタキシャル成長用基板

Country Status (4)

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US (1) US20250146179A1 (https=)
JP (1) JP7710614B2 (https=)
TW (1) TWI880249B (https=)
WO (1) WO2024004314A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025203255A1 (ja) * 2024-03-26 2025-10-02 日本碍子株式会社 複合基板、半導体素子および複合基板の製造方法
CN121038311B (zh) * 2025-10-29 2026-02-10 中国电子科技集团公司第五十五研究所 一种金刚石衬底GaN HEMT器件及其制备方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7601441B2 (en) 2002-06-24 2009-10-13 Cree, Inc. One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
US7314521B2 (en) * 2004-10-04 2008-01-01 Cree, Inc. Low micropipe 100 mm silicon carbide wafer
JP4458116B2 (ja) * 2007-05-30 2010-04-28 住友電気工業株式会社 エピタキシャル層成長用ｉｉｉ族窒化物半導体層貼り合わせ基板および半導体デバイス
JP2009117533A (ja) 2007-11-05 2009-05-28 Shin Etsu Chem Co Ltd 炭化珪素基板の製造方法
EP3239100A4 (en) * 2014-12-22 2018-07-11 Shin-Etsu Chemical Co., Ltd. Composite substrate, method for forming nanocarbon film, and nanocarbon film
JP2016139655A (ja) * 2015-01-26 2016-08-04 富士通株式会社 半導体装置及び半導体装置の製造方法
JP7115297B2 (ja) * 2018-12-25 2022-08-09 株式会社Sumco 多結晶ダイヤモンド自立基板及びその製造方法
WO2020255376A1 (ja) * 2019-06-21 2020-12-24 三菱電機株式会社 複合基板の製造方法、および、複合基板
FR3105876B1 (fr) * 2019-12-30 2021-11-26 Soitec Silicon On Insulator Procédé de fabrication d’une structure composite comprenant une couche mince en SiC monocristallin sur un substrat support
CN112614880A (zh) * 2020-11-30 2021-04-06 西安电子科技大学 一种金刚石复合衬底氮化镓器件的制备方法及其器件
JP7295351B1 (ja) * 2021-09-22 2023-06-20 日本碍子株式会社 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

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