JPWO2023277048A5 - - Google Patents
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- JPWO2023277048A5 JPWO2023277048A5 JP2023532005A JP2023532005A JPWO2023277048A5 JP WO2023277048 A5 JPWO2023277048 A5 JP WO2023277048A5 JP 2023532005 A JP2023532005 A JP 2023532005A JP 2023532005 A JP2023532005 A JP 2023532005A JP WO2023277048 A5 JPWO2023277048 A5 JP WO2023277048A5
- Authority
- JP
- Japan
- Prior art keywords
- substituted
- carbon atoms
- etching composition
- semiconductor substrate
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021110798 | 2021-07-02 | ||
| PCT/JP2022/025880 WO2023277048A1 (ja) | 2021-07-02 | 2022-06-29 | メモリ素子用半導体基板のエッチング組成物およびこれを用いたメモリ素子用半導体基板の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023277048A1 JPWO2023277048A1 (https=) | 2023-01-05 |
| JPWO2023277048A5 true JPWO2023277048A5 (https=) | 2025-05-20 |
Family
ID=84690245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023532005A Pending JPWO2023277048A1 (https=) | 2021-07-02 | 2022-06-29 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240287385A1 (https=) |
| JP (1) | JPWO2023277048A1 (https=) |
| KR (1) | KR20240029551A (https=) |
| CN (1) | CN117581338A (https=) |
| TW (1) | TW202311566A (https=) |
| WO (1) | WO2023277048A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW202546205A (zh) * | 2023-12-13 | 2025-12-01 | 日商三菱瓦斯化學股份有限公司 | 半導體基板清洗用組成物、半導體基板之清洗方法、及半導體基板之製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6363116B2 (ja) * | 2013-03-04 | 2018-07-25 | インテグリス・インコーポレーテッド | 窒化チタンを選択的にエッチングするための組成物および方法 |
| TWI642763B (zh) * | 2014-01-27 | 2018-12-01 | Mitsubishi Gas Chemical Company, Inc. | 氮化鈦除去用液體組成物、利用該液體組成物之半導體元件之洗滌方法、及半導體元件之製造方法 |
-
2022
- 2022-06-29 KR KR1020237042854A patent/KR20240029551A/ko active Pending
- 2022-06-29 JP JP2023532005A patent/JPWO2023277048A1/ja active Pending
- 2022-06-29 US US18/573,719 patent/US20240287385A1/en active Pending
- 2022-06-29 CN CN202280045082.4A patent/CN117581338A/zh active Pending
- 2022-06-29 WO PCT/JP2022/025880 patent/WO2023277048A1/ja not_active Ceased
- 2022-06-30 TW TW111124419A patent/TW202311566A/zh unknown
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